A plasma processing apparatus includes: a plasma processing chamber; a base support disposed within the plasma processing chamber; a base having a first through hole penetrating from an upper surface of the base to a lower surface of the base and disposed on the base support; an electrostatic chuck having a second through hole communicating with the first through hole by penetrating from a substrate support surface or a ring support surface to a lower surface of the electrostatic chuck and disposed on the base; a first insulating member disposed within the first through hole; a second insulating member disposed within the first through hole to surround at least a portion of the first insulating member; a first sealing member disposed between the first insulating member and the electrostatic chuck; and a second sealing member disposed between the first insulating member and an insulating support member.

Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.

Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.

A device for producing a group III nitride crystal includes a raw material chamber that generates a group III element oxide gas and a growth chamber that reacts the group III element oxide gas supplied from the raw material chamber with a nitrogen element-containing gas to generate a group III nitride crystal on a seed substrate, wherein the raw material chamber includes a raw material reaction room and a multistage raw material boat that includes stages, is provided in the raw material reaction room, is filled with a starting group III element source, and causes a reactive gas to flow to react with the starting group III element source to generate a group III element oxide gas, and the multistage raw material boat includes, in each of the stages, at least two or more passages through which gas can flow.

A semiconductor substrate manufacturing method includes the steps of: forming, on a first surface of a first substrate, a plurality of terrace portions arranged in a first direction parallel to a horizontal plane of the first substrate, and a step portion having a predetermined height between two adjacent terrace portions in the first direction; forming a first semiconductor layer such that a part of the step portion is exposed; and vaporizing a portion of Si of the first substrate from a part of the step portion exposed from the first semiconductor layer by performing heat treatment on the first substrate on which the first semiconductor layer is formed, thereby forming a buffer layer having at least one graphene layer in at least a part between the first semiconductor layer and the first substrate.

Provided are a substrate processing method and a substrate processing apparatus that improve an etching resistance and suppress a film stress. A substrate processing method of forming a carbon-based film on a substrate includes: a process of placing the substrate on a stage; a first film forming process of forming a first carbon-based film having a first stress; a second film forming process of forming a second carbon-based film having a second stress; and a third film forming process of repeating the first film forming process and the second film forming process to form a stacked body of the first carbon-based film and the second carbon-based film, wherein the first stress and the second stress are oriented in a same direction, and the first stress and the second stress have different intensities.

A plasma processing system includes a plasma processing apparatus and a transfer device. The plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed inside the plasma processing chamber and having a lower electrode; an upper electrode assembly disposed above the substrate support, and having an electrode support and a replaceable upper electrode plate disposed below the electrode support; and a lifter configured to move the replaceable upper electrode plate vertically between an upper position and a lower position inside the plasma processing chamber, and configured to fix the replaceable upper electrode plate to the electrode support when the replaceable upper electrode plate is in the upper position. The transfer device includes: a transfer chamber; and a transfer robot disposed inside the transfer chamber, and configured to transfer the replaceable upper electrode plate between the lower position inside the plasma processing chamber and the transfer chamber.

There is a substrate processing apparatus for processing a substrate, comprising: a power receiver including a power reception coil to which power is transmitted in a non-contact manner from a power transmission coil located outside the substrate processing apparatus, wherein the substrate processing apparatus is configured to supply power to at least one unit or member that uses power from the power receiver.

A vaporizer includes a liquid material introduction, a vaporized material discharge port, a vaporizer body, and a heater. The vaporizer body includes therein a vaporization unit extending from the liquid material introduction port to the vaporized material discharge port. A passage into which a liquid material flows is formed in the vaporization unit. The passage is formed such that a passage area thereof is increased toward the vaporized material discharge port from the liquid material introduction port.

A laminate structure of the disclosure is a laminate structure for a semiconductor manufacturing device, and includes a substrate containing aluminum and including a first face, an intermediate layer arranged on the first face of the substrate and containing aluminum oxide, and a cover layer arranged on the intermediate layer and containing metal atoms. The intermediate layer includes a partition wall forming a plurality of voids in a cross-sectional shape parallel to the first face. The intermediate layer includes a boundary layer covering the first face of the substrate. The cover layer is arranged in some of the plurality of voids in the intermediate layer. The plurality of voids includes voids adjacent to the boundary layer and separated from the cover layer.