Techniques for preserving the underlying dielectric layer during MRAM device formation are provided. In one aspect, a method of forming an MRAM device includes: depositing a first dielectric cap layer onto a substrate over logic and memory areas of the substrate; depositing a sacrificial metal layer onto the first dielectric cap layer; patterning the sacrificial metal layer, wherein the patterned sacrificial metal layer is present over the first dielectric cap layer in at least the logic area; depositing a second dielectric cap layer onto the first dielectric cap layer; forming an MRAM stack on the second dielectric cap layer; patterning the MRAM stack using ion beam etching into at least one memory cell, wherein the patterned sacrificial metal layer protects the first dielectric cap layer in the logic area; and removing the patterned sacrificial metal layer. An MRAM device is also provided.

A thin layer etching apparatus includes an etchant supply unit configured to supply an etchant onto a substrate to etch a thin layer formed on the substrate, a temperature measuring unit configured to measure a temperature of the substrate while an etching process is performed by the etchant, a laser irradiating unit configured to irradiate a first laser beam on a first portion including a central portion of the substrate and to irradiate a second laser beam in a ring shape on a second portion surrounding the first portion so that the temperature of the substrate is maintained at a predetermined temperature during the etching process, and a process control unit configured to control power of the first and second laser beams based on the temperature of the substrate measured by the temperature measuring unit to reduce a temperature difference between the first and second portions of the substrate.

The present invention provides a method for removing re-sputtered material on a substrate. A process chamber having a plasma source and a substrate support is provided along with the substrate having an upper surface and a lower surface. A masking material having a patterned sidewall is patterned onto the upper surface of the substrate along with a sacrificial layer between the upper surface of the substrate and the masking material. The lower surface of the substrate is placed onto the substrate support. A plasma is generated using the plasma source. The substrate is processed on the substrate support using the generated plasma. The sacrificial layer is removed after the processing of the substrate.

Methods and systems for implementing artificial intelligence enabled preparation end-pointing are disclosed. An example method at least includes obtaining an image of a surface of a sample, the sample including a plurality of features, analyzing the image to determine whether an end point has been reached, the end point based on a feature of interest out of the plurality of features observable in the image, and based on the end point not being reached, removing a layer of material from the surface of the sample.

A laser processing method includes irradiating a laser light into a substrate along a cutting line to form a laser-scribed layer within the substrate, irradiating an X-ray onto a first surface of the substrate along the cutting line, obtaining an image of a diffracted X-ray from the substrate, and determining whether or not the laser-scribed layer is formed along the cutting line, based on analysis of the obtained image of the diffracted X-ray.

A method includes depositing a second dielectric layer over a first dielectric layer, depositing a third dielectric layer over the second dielectric layer, patterning a plurality of first openings in the third dielectric layer, etching the second dielectric layer through the first openings to form second openings in the second dielectric layer, performing a plasma etching process directed at the second dielectric layer from a first direction, the plasma etching process extending the second openings in the first direction, and etching the first dielectric layer through the second openings to form third openings in the first dielectric layer.

Techniques for preserving the underlying dielectric layer during MRAM device formation are provided. In one aspect, a method of forming an MRAM device includes: depositing a first dielectric cap layer onto a substrate over logic and memory areas of the substrate; depositing a sacrificial metal layer onto the first dielectric cap layer; patterning the sacrificial metal layer, wherein the patterned sacrificial metal layer is present over the first dielectric cap layer in at least the logic area; depositing a second dielectric cap layer onto the first dielectric cap layer; forming an MRAM stack on the second dielectric cap layer; patterning the MRAM stack using ion beam etching into at least one memory cell, wherein the patterned sacrificial metal layer protects the first dielectric cap layer in the logic area; and removing the patterned sacrificial metal layer. An MRAM device is also provided.

A method for manufacturing a semiconductor device in which a semiconductor substrate is provided, including a SOI-wafer having a carrier layer defining a rear side, a functional layer defining a front side. An insulation layer is situated between the carrier layer and functional layer. The functional layer includes a functional area having functional structures. The front side is masked, a first mask opening defines an interior area containing the functional area. The functional layer is removed by etching the front side. The rear side is masked, a second mask opening being configured, and a circumferential edge of the second mask opening is spaced outwardly relative to an outer circumferential edge of the interior area. The carrier layer and the insulation layer are removed at least in the area of the second-mask opening by etching to expose the interior area.

Method for preparing site-specific, plan-view lamellae from multilayered microelectronic devices. A focused ion beam that is directed, with an etch-assisting gas, toward an uppermost layer of a device removes at least that uppermost layer and thereby exposes an underlying layer over, or comprising, a target area from which the site-specific, plan-view lamella is to be prepared, wherein the focused ion beam is in a face-on orientation in removing the uppermost layer to expose the underlying layer. In a preferred embodiment, the etch-assisting gas comprises methyl nitroacetate. In alternative embodiments, the etch-assisting gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

Apparatus, such as electronic devices and structures thereof, include at least one doped surface of a base (e.g., semiconductor) material. A dopant of the at least one doped surface is concentrated along the surface, defining a thickness, on or in the base material, not exceeding about one atomic layer. Methods for forming the doped surfaces involve gas-phase doping exposed surfaces of the base material in situ, within a same material-removal tool used to form at least one opening defined at least partially by the base material and into which the dopant is to be introduced.