Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.

A substrate treating apparatus includes a process chamber having a processing space in which a substrate is plasma-treated and a laser irradiation unit irradiating the substrate with a plurality of lasers having different pulse widths to heat the substrate to reach a temperature at which the substrate is plasma-treated.

Film information about a thin film formed on the front surface of a semiconductor wafer, substrate information about the semiconductor wafer, and an installation angle of an upper radiation thermometer are set and input. Emissivity of the front surface of the semiconductor wafer formed with a multilayer film is calculated based on the various kinds of information. Further, a weighted average efficiency of the emissivity of the front surface of the semiconductor wafer is determined based on a sensitivity distribution of the upper radiation thermometer. Front surface temperature of the semiconductor wafer at the time of heat treatment is measured using the determined weighted average efficiency of the emissivity. The emissivity is determined based on the film information and the like, so that the front surface temperature of the semiconductor wafer can be accurately measured even when thin films are formed in multiple layers.

Apparatus, such as electronic devices and structures thereof, include at least one doped surface of a base (e.g., semiconductor) material. A dopant of the at least one doped surface is concentrated along the surface, defining a thickness, on or in the base material, not exceeding about one atomic layer. Methods for forming the doped surfaces involve gas-phase doping exposed surfaces of the base material in situ, within a same material-removal tool used to form at least one opening defined at least partially by the base material and into which the dopant is to be introduced.

A chemically-doped graphene transistor comprising a plurality of graphene layers and having a first doped region separated from a second doped region by a third doped region, wherein the first and second doped regions are of an opposite doping type to the third doped region, and wherein each of the first, second and third doped regions each comprise a separate electrical contact.

An apparatus for treating a substrate is disclosed. The apparatus for treating the substrate includes a housing having a treatment space inside the housing, a plate to support the substrate inside the housing, a heating member provided inside the plate to heat the substrate and including a plurality of heating zones, a temperature measuring member to measure a temperature of the substrate with respect to each of the plurality of heating zones of the heating member, and a control unit to control a temperature for the heating member in a dynamic section of a temperature change graph measured in the temperature measuring member. The control unit performs temperature control with respect to each of the plurality of heating zones of the heating member to uniformize the thickness of the thin film on the substrate.

Methods and equipment for the removal of semiconductor wafers grown on the top surface of a single crystal silicon substrate covered by a porous silicon separation layer by using IR irradiation of the porous silicon separation layer to initiate release of the semiconductor wafer from the substrate, particularly at edges (and corners) of the top surface of the substrate.

Disclosed are methods of fabricating short-wave infrared detector arrays including readout and absorption wafers connected by a recrystallized a-Si layer. The absorber wafer includes a SWIR conversion layer with a Ge.sub.1-xSn.sub.x alloy composition. Process steps realize the readout wafer and a portion of the absorption wafer, including bonding the readout wafer and a first portion of the absorption wafer. The a-Si intermediate layer linking the readout wafer and the first portion of the absorption wafer the a-Si intermediate layer is recrystallized by applying heat by a light source. The method assures a temperature profile between the light entrance surface and the CMOS electronic layer of the readout wafer maintaining readout layer temperature <350 C. during recrystallization. After the recrystallization process step the absorption wafer is completed by depositing the SWIR conversion layer. Also disclosed is a SWIR detector array realized by the method and SWIR detector array applications.

The present invention is related to a heating device for heating an object material using a laser beam, the heating device comprising a stage on which the object material is placed; a laser module for generating and outputting a laser beam; an optical module for controlling a path of the laser beam; a polygon mirror rotating around an axis of rotation and having a plurality of reflecting surfaces which reflect the laser beam; and a beam guide module for controlling an incidence range within which the laser beam reflected by the polygon mirror is incident on the object material, and an indirect heating method using a laser beam in a heating device.

A semiconductor device having favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The semiconductor layer includes an island-shaped top surface. The first insulating layer is provided in contact with a top surface and a side surface of the semiconductor layer. The first conductive layer is positioned over the first insulating layer and includes a portion overlapping with the semiconductor layer. In addition, the semiconductor layer includes a metal oxide, and the first insulating layer includes an oxide. The semiconductor layer includes a first region overlapping with the first conductive layer and a second region not overlapping with the first conductive layer. The first insulating layer includes a third region overlapping with the first conductive layer and a fourth region not overlapping with the first conductive layer. Furthermore, the second region and the fourth region contain phosphorus or boron.