A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

A thermal processing system is provided. The thermal processing system can include a processing chamber and a workpiece disposed within the processing chamber. The thermal processing system can include a heat source configured to emit light towards the workpiece. The thermal processing system can further include a tunable reflective array disposed between the workpiece and the heat source. The tunable reflective array can include a plurality of pixels. Each pixel of the plurality of pixels can include an electrochromatic material configurable in a translucent state or an opaque state. When the electrochromatic material of a pixel is configured in the translucent state, the light at least partially passes through the pixel. Conversely, transmission of light through a pixel is reduced when the electrochromatic material of the pixel is configured in the opaque state.

A thermal processing system is provided. The thermal processing system can include a processing chamber and a workpiece disposed within the processing chamber. The thermal processing system can include a heat source configured to emit light towards the workpiece. The thermal processing system can further include a tunable reflective array disposed between the workpiece and the heat source. The tunable reflective array can include a plurality of pixels. Each pixel of the plurality of pixels can include an electrochromatic material configurable in a translucent state or an opaque state. When the electrochromatic material of a pixel is configured in the translucent state, the light at least partially passes through the pixel. Conversely, transmission of light through a pixel is reduced when the electrochromatic material of the pixel is configured in the opaque state.

A method for thinning a wafer is provided which is related to the field of semiconductor technologies, to resolve problems of a low yield, a complex process, and high preparation costs of a SiC power device. The wafer which may alternatively be understood as a composite substrate, includes a first silicon carbide layer, a dielectric layer, and a second silicon carbide layer that are disposed in a stacked manner. The wafer has a first side and a second side that are opposite to each other, and a side that is of the second silicon carbide layer and that is away from the first silicon carbide layer is the first side of the wafer.

The disclosure provides a control device of an annealing device, which is capable of further suppressing a temperature of a surface opposite to a laser irradiation surface from rising. A beam spot of a pulsed laser beam output from a laser light source on a surface of an annealed target is shaped into a long shape in one direction by a beam shaping optical element. A movement mechanism moves the beam spot with respect to the annealed target. The control device controls the laser light source and the movement mechanism and performs annealing by performing a sweep operation of moving the beam spot in a longitudinal direction of the beam spot with respect to the annealed target while causing the pulsed laser beam to be incident on the annealed target.

The disclosure provides a control device of an annealing device, which is capable of further suppressing a temperature of a surface opposite to a laser irradiation surface from rising. A beam spot of a pulsed laser beam output from a laser light source on a surface of an annealed target is shaped into a long shape in one direction by a beam shaping optical element. A movement mechanism moves the beam spot with respect to the annealed target. The control device controls the laser light source and the movement mechanism and performs annealing by performing a sweep operation of moving the beam spot in a longitudinal direction of the beam spot with respect to the annealed target while causing the pulsed laser beam to be incident on the annealed target.

Nanowire structures having non-discrete source and drain regions are described. For example, a semiconductor device includes a plurality of vertically stacked nanowires disposed above a substrate. Each of the nanowires includes a discrete channel region disposed in the nanowire. A gate electrode stack surrounds the plurality of vertically stacked nanowires. A pair of non-discrete source and drain regions is disposed on either side of, and adjoining, the discrete channel regions of the plurality of vertically stacked nanowires.

Nanowire structures having non-discrete source and drain regions are described. For example, a semiconductor device includes a plurality of vertically stacked nanowires disposed above a substrate. Each of the nanowires includes a discrete channel region disposed in the nanowire. A gate electrode stack surrounds the plurality of vertically stacked nanowires. A pair of non-discrete source and drain regions is disposed on either side of, and adjoining, the discrete channel regions of the plurality of vertically stacked nanowires.

The problem to be solved by the present invention is to provide a novel technique that can remove a strained layer introduced into an aluminum nitride substrate. In order to solve this problem, the present aluminum nitride substrate manufacturing method involves a strained layer removal step for removing a strained layer in an aluminum nitride substrate by heat treatment of the aluminum nitride substrate in a nitrogen atmosphere. In this way, the present invention can remove a strained layer that has been introduced into an aluminum nitride substrate.

A substrate processing technology including: transferring a substrate to a process chamber and mounting the substrate on a substrate holder; heating the substrate with a heating device to perform predetermined substrate processing; determining the number of times of the predetermined substrate processing that has been performed that the predetermined substrate processing has been performed a preset number of times or more, determining whether it is necessary to adjust a mounting position at which the substrate is mounted on the substrate holder; and when it is determined that a mounting position adjustment is necessary, determining the mounting position by comparing the substrate temperature measured at the performing the predetermined substrate processing with a premeasured temperature of the substrate which corresponds to the mounting position and is stored in a memory.