According to one embodiment, there is provided a method for manufacturing a semiconductor device. The method includes metal electroplating on a surface of a first electrode formed on a first surface of a semiconductor substrate with a plating solution which contains aggregates of a supercritical fluid and a solution of a plating metal ion and an electrolyte. The first surface includes a recess. The surface is along with a shape of the recess. The recess has a first dimension and a second dimension, and assuming that an aspect ratio of the recess is given as a ratio of the second dimension to the first dimension, a median of a particle size distribution of the aggregates is greater than the first dimension.

Exemplary methods of plating are described. The methods may include contacting a patterned substrate with a plating bath in a plating chamber. The patterned substrate includes at least one metal interconnect with a contact surface that is exposed to the plating bath. The metal interconnect is made of a first metal characterized by a first reduction potential. The methods further include plating a diffusion layer on the contact surface of the metal interconnect. The diffusion layer is made of a second metal characterized by a second reduction potential that is larger than the first reduction potential of the first metal in the metal interconnects. The plating bath also includes one or more ions of the second metal and a grain refining compound that reduces the formation of pinhole defects in the diffusion layer.

Exemplary methods of plating are described. The methods may include contacting a patterned substrate with a plating bath in a plating chamber. The patterned substrate includes at least one metal interconnect with a contact surface that is exposed to the plating bath. The metal interconnect is made of a first metal characterized by a first reduction potential. The methods further include plating a diffusion layer on the contact surface of the metal interconnect. The diffusion layer is made of a second metal characterized by a second reduction potential that is larger than the first reduction potential of the first metal in the metal interconnects. The plating bath also includes one or more ions of the second metal and a grain refining compound that reduces the formation of pinhole defects in the diffusion layer.

A structure of capacitors connected in parallel includes a substrate. A trench embedded in the substrate. Numerous electrode layers respectively conformally fill in and cover the trench. The electrode layers are formed of numerous nth electrode layers, wherein n is a positive integer from 1 to M, and M is not less than 3. The nth electrode layer with smaller n is closer to the sidewall of the trench. When n equals to M, the Mth electrode layer fills in the center of the trench, and the top surface of the Mth electrode is aligned with the top surface of the substrate. A capacitor dielectric layer is disposed between the adjacent electrode layers. A first conductive plug contacts the nth electrode layer with odd-numbered n. A second conductive plug contacts the nth electrode layer with even-numbered n.

A method of processing a semiconductor wafer includes: forming one or more epitaxial layers over a first main surface of the semiconductor wafer; forming one or more porous layers in the semiconductor wafer or in the one or more epitaxial layers, wherein the semiconductor wafer, the one or more epitaxial layers and the one or more porous layers collectively form a substrate; forming doped regions of a semiconductor device in the one or more epitaxial layers; and after forming the doped regions of the semiconductor device, separating a non-porous part of the semiconductor wafer from a remainder of the substrate along the one or more porous layers.

A method of processing a semiconductor wafer includes: forming one or more epitaxial layers over a first main surface of the semiconductor wafer; forming one or more porous layers in the semiconductor wafer or in the one or more epitaxial layers, wherein the semiconductor wafer, the one or more epitaxial layers and the one or more porous layers collectively form a substrate; forming doped regions of a semiconductor device in the one or more epitaxial layers; and after forming the doped regions of the semiconductor device, separating a non-porous part of the semiconductor wafer from a remainder of the substrate along the one or more porous layers.

There is provided a method of plating comprising: a process of bringing a sealing portion of a seal provided to prevent a contact of a substrate holder that holds a substrate from coming into contact with a plating solution, into contact with pure water; and a process of detecting a leak of the seal, based on presence or absence of a short circuit of a leak detection electrode placed inside of the substrate holder after the sealing portion is brought into contact with the pure water and before the substrate is brought into contact with a chemical solution.

Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.

Implementations of a method of forming semiconductor packages may include: providing a wafer having a plurality of devices, etching one or more trenches on a first side of the wafer between each of the plurality of devices, applying a molding compound to the first side of the wafer to fill the one or more trenches; grinding a second side of the wafer to a desired thickness, and exposing the molding compound included in the one or more trenches. The method may include etching the second side of the wafer to expose a height of the molding compound forming one or more steps extending from the wafer, applying a back metallization to a second side of the wafer, and singulating the wafer at the one or more steps to form a plurality of semiconductor packages. The one or more steps may extend from a base of the back metallization.

Implementations of a method of forming semiconductor packages may include: providing a wafer having a plurality of devices, etching one or more trenches on a first side of the wafer between each of the plurality of devices, applying a molding compound to the first side of the wafer to fill the one or more trenches; grinding a second side of the wafer to a desired thickness, and exposing the molding compound included in the one or more trenches. The method may include etching the second side of the wafer to expose a height of the molding compound forming one or more steps extending from the wafer, applying a back metallization to a second side of the wafer, and singulating the wafer at the one or more steps to form a plurality of semiconductor packages. The one or more steps may extend from a base of the back metallization.