Systems and methods of the disclosed embodiments include reducing defects in a semiconductor layer. The defects may be reduced by forming the semiconductor layer on a substrate, removing at least a portion the substrate from an underside of the semiconductor layer, and annealing the semiconductor layer to reduce the defects in the layer. The annealing includes focusing energy at the layer.

A method of manufacturing semiconductor device of an embodiment includes performing a first ion implantation implanting at least one element selected from a group consisting of beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), zinc (Zn), cadmium (Cd), silicon (Si), germanium (Ge), and tin (Sn) into a nitride semiconductor layer; performing a second ion implantation implanting nitrogen (N) into the nitride semiconductor layer; performing a third ion implantation implanting hydrogen (H) into the nitride semiconductor layer; forming a covering layer on a surface of the nitride semiconductor layer after the first ion implantation, the second ion implantation, and the third ion implantation; performing a first heat treatment after forming the covering layer; removing the covering layer after the first heat treatment; and performing a second heat treatment after removing the covering layer.

In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.

A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A surface of the p-type region perpendicular to a growth direction of the semiconductor structure includes a first portion and a second portion. The first portion is less conductive than the second portion. The device further includes a p-contact formed on the p-type region. The p-contact includes a reflector and a blocking material. The blocking material is disposed over the first portion and no blocking material is disposed over the second portion.

A method for making a semiconductor device may include forming a recess in a substrate including a first Group IV semiconductor, forming an active layer comprising a Group III-V semiconductor within the recess, and forming a buffer layer between the substrate and active layer and comprising a second Group IV semiconductor. The method may further include forming an impurity and point defect blocking superlattice layer adjacent the buffer layer.

Systems and methods of the disclosed embodiments include reducing defects in a semiconductor layer. The defects may be reduced by forming the semiconductor layer on a substrate, removing at least a portion the substrate from an underside of the semiconductor layer, and annealing the semiconductor layer to reduce the defects in the layer. The annealing includes focusing energy at the layer.

A method for reducing defects of an electronic component using a supercritical fluid includes recrystallizing and rearranging grains in the electronic component by introducing the supercritical fluid doped with H.sub.2S together with an electromagnetic wave into a cavity. The cavity has a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.

A semiconductor device may include a substrate including a first Group IV semiconductor having a recess therein, an active layer comprising a Group III-V semiconductor within the recess, and a buffer layer between the substrate and active layer and comprising a second Group IV semiconductor. The semiconductor device may further include an impurity and point defect blocking superlattice layer adjacent the buffer layer.

A semiconductor device may include a substrate including a first Group IV semiconductor having a recess therein, an active layer comprising a Group III-V semiconductor within the recess, and a buffer layer between the substrate and active layer and comprising a second Group IV semiconductor. The semiconductor device may further include an impurity and point defect blocking superlattice layer adjacent the buffer layer.

A method for making a semiconductor device may include forming a recess in a substrate including a first Group IV semiconductor, forming an active layer comprising a Group III-V semiconductor within the recess, and forming a buffer layer between the substrate and active layer and comprising a second Group IV semiconductor. The method may further include forming an impurity and point defect blocking superlattice layer adjacent the buffer layer.