A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.

A composite wafer includes an oxide single crystal thin film of lithium tantalate or lithium niobate transferred onto the entire face of a support wafer and is free from cracking or peeling on a bonding interface between the support wafer and the oxide single crystal thin film. A method for manufacturing a composite wafer at least includes a step of forming an ion-implanted layer in an oxide single crystal wafer, a step of subjecting at least one of the ion-implanted surface of the oxide single crystal wafer and a surface of a support wafer to a surface activation treatment, a step of bonding the ion-implanted surface of the oxide single crystal wafer to the surface of the support wafer to form a laminate, a step of subjecting the laminate to a first heat treatment at a temperature not less than 90 C. and not causing cracking, a step of applying a mechanical impact to the ion-implanted layer, and a step of subjecting the support wafer having the transferred oxide single crystal thin film to a second heat treatment at 250 C. to 600 C. to yield a composite wafer.

A composite wafer includes an oxide single crystal thin film of lithium tantalate or lithium niobate transferred onto the entire face of a support wafer and is free from cracking or peeling on a bonding interface between the support wafer and the oxide single crystal thin film. A method for manufacturing a composite wafer at least includes a step of forming an ion-implanted layer in an oxide single crystal wafer, a step of subjecting at least one of the ion-implanted surface of the oxide single crystal wafer and a surface of a support wafer to a surface activation treatment, a step of bonding the ion-implanted surface of the oxide single crystal wafer to the surface of the support wafer to form a laminate, a step of subjecting the laminate to a first heat treatment at a temperature not less than 90 C. and not causing cracking, a step of applying a mechanical impact to the ion-implanted layer, and a step of subjecting the support wafer having the transferred oxide single crystal thin film to a second heat treatment at 250 C. to 600 C. to yield a composite wafer.

A method of converting films is disclosed. A method of modifying films is also disclosed. Some methods advantageously convert films from a first elemental composition to a second elemental composition. Some methods advantageously modify film properties without modifying film composition.

A method of converting films is disclosed. A method of modifying films is also disclosed. Some methods advantageously convert films from a first elemental composition to a second elemental composition. Some methods advantageously modify film properties without modifying film composition.

The present disclosure relates to the technical field of display, and discloses an array substrate, a manufacturing method thereof, and a display device. The manufacturing method of the array substrate comprises: forming a first active layer, a material of which is polysilicon; injecting ions at least into an area to be doped of the first active layer to form a doped area, which is utilized to be electrically connected to corresponding source electrode and drain electrode; forming a second active layer, a material of which is an amorphous metal oxide; and after injecting ions at least into the area to be doped of the first active layer and forming the second active layer, performing an activation process to activate the ions injected into the first active layer and to convert the material of the second active layer from an amorphous state to a microcrystalline state.

To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

A structure and a manufacturing method of a metal-oxide-semiconductor field-effect transistor with an element of IVA group ion implantation are disclosed. The element of IVA group ion implantation layer is disposed in a body and close to an interface between a gate oxide layer and the body. The element of IVA group ion implantation layer is utilized to change a property of a channel of the structure.

A method for doping a layer, a thin film transistor and a method for fabricating the thin film transistor. The method comprises: forming a layer to be doped on a substrate by a first patterning process, wherein the layer comprises a first region, a second region and a third region, the first region is arranged in a middle region, the third region is arranged in an edge region, the second region is arranged between the first region and the third region; forming a first blocking layer and a second blocking layer on the layer in this order by a second patterning process, wherein an orthographic projection region of the first blocking layer on the layer exactly covers the first region, and an orthographic projection region of the second blocking layer on the layer exactly covers the first region and the second region; perform a first doping on the layer with an ion beam perpendicular to the substrate, to realize doping of the third region; rotating the substrate by a preset angle in a direction parallel to the ion beam, so that the second blocking layer does not shield the second region, and performing a second doping on the layer with the ion beam to realize.