A method for 3D printing includes printing a first metallic material on a substrate as a support structure (48). A second metallic material, which is less anodic than the first metallic material, is printed on the substrate as a target structure (46), in contact with the support structure. The support structure is chemically removed from the target structure by applying a galvanic effect to selectively corrode the first metallic material.

A method for 3D printing includes printing a first metallic material on a substrate as a support structure (48). A second metallic material, which is less anodic than the first metallic material, is printed on the substrate as a target structure (46), in contact with the support structure. The support structure is chemically removed from the target structure by applying a galvanic effect to selectively corrode the first metallic material.

The present invention relates to a semiconductor structure and a method for forming the same. The method comprises steps of providing a substrate having a dummy gate, forming an elevated semiconductor source/drains epitaxy growing with lower in-situ doping concentration; forming a second elevated semiconductor source/drains epitaxy growing with higher in-situ doping concentration.

The present invention relates to a semiconductor structure and a method for forming the same. The method comprises steps of providing a substrate having a dummy gate, forming an elevated semiconductor source/drains epitaxy growing with lower in-situ doping concentration; forming a second elevated semiconductor source/drains epitaxy growing with higher in-situ doping concentration.

A method for manufacturing an element chip includes a protection film etching step of removing a part of the protection film which is stacked on the dividing region and the protection film which is stacked on the element region through etching the protection film anisotropically by exposing the substrate to first plasma and remaining the protection film for covering an end surface of the element region. Furthermore, the method for manufacturing an element chip includes an isotropic etching step of etching the dividing region isotropically by exposing the substrate to second plasma and a plasma dicing step of dividing the substrate to a plurality of element chips including the element region by exposing the substrate to third plasma in a state where the second main surface is supported by a supporting member.

A method for manufacturing an element chip includes a protection film etching step of removing a part of the protection film which is stacked on the dividing region and the protection film which is stacked on the element region through etching the protection film anisotropically by exposing the substrate to first plasma and remaining the protection film for covering an end surface of the element region. Furthermore, the method for manufacturing an element chip includes an isotropic etching step of etching the dividing region isotropically by exposing the substrate to second plasma and a plasma dicing step of dividing the substrate to a plurality of element chips including the element region by exposing the substrate to third plasma in a state where the second main surface is supported by a supporting member.

A semiconductor device with less variation in transistor characteristics is provided. The semiconductor device includes a semiconductor film, a pair of blocking films over the semiconductor film, and an insulating film provided over the semiconductor film and between the pair of blocking films. The semiconductor film includes a pair of n-type regions and an i-type region provided between the pair of n-type regions. The n-type regions overlap with the blocking films. The i-type region overlaps with the insulating film.

A semiconductor device and method for fabricating a semiconductor device, comprising a paste layer is disclosed. In one example the method comprises attaching a substrate to a carrier, wherein the substrate comprises a plurality of semiconductor dies. A layer of a paste is applied to the substrate. The layer above cutting regions of the substrate is structured. The substrate is cut along the cutting regions.

A semiconductor device and method for fabricating a semiconductor device, comprising a paste layer is disclosed. In one example the method comprises attaching a substrate to a carrier, wherein the substrate comprises a plurality of semiconductor dies. A layer of a paste is applied to the substrate. The layer above cutting regions of the substrate is structured. The substrate is cut along the cutting regions.

A method of manufacturing a semiconductor device, includes; preparing an insulated circuit substrate including a circuit layer having a main surface and a side surface inclined to a normal direction of the main surface; irradiating the side surface of the circuit layer with a laser beam so as to roughen at least a part of the side surface of the circuit layer and provide an oxide film on the roughened side surface of the circuit layer; and bonding a semiconductor chip to the main surface of the circuit layer via a solder layer.