A transistor device comprising an inorganic oxide semiconductor channel having a channel length L and a channel width W between source and drain conductors and capacitively coupled to a gate conductor via an organic polymer dielectric in contact with the inorganic oxide semiconductor channel. The gate voltage required to maintain a constant current of at least X nA between the source and drain conductors over a period of 14 hours while the gate and drain conductors are maintained at the same electric potential, varies by less than 1V, preferably less than about 0.2V; wherein X equals the W/L ratio multiplied by 50.

A transistor device comprising an inorganic oxide semiconductor channel having a channel length L and a channel width W between source and drain conductors and capacitively coupled to a gate conductor via an organic polymer dielectric in contact with the inorganic oxide semiconductor channel. The gate voltage required to maintain a constant current of at least X nA between the source and drain conductors over a period of 14 hours while the gate and drain conductors are maintained at the same electric potential, varies by less than 1V, preferably less than about 0.2V; wherein X equals the W/L ratio multiplied by 50.

Copper electroplating compositions which include an imidazole compound enables the electroplating of copper having uniform morphology on substrates. The composition and methods of enable copper electroplating of photoresist defined features. Such features include pillars, bond pads and line space features.

A field-effect transistor including: a source electrode and a drain electrode; a gate electrode; a semiconductor layer; and a gate insulating layer, wherein the gate insulating layer is an oxide insulator film including A element and B element, the A element being one or more selected from the group consisting of Zr and Hf and the B element being one or more selected from the group consisting of Be and Mg.

A field-effect transistor including: a source electrode and a drain electrode; a gate electrode; a semiconductor layer; and a gate insulating layer, wherein the gate insulating layer is an oxide insulator film including A element and B element, the A element being one or more selected from the group consisting of Zr and Hf and the B element being one or more selected from the group consisting of Be and Mg.

The present invention provides a preparation method for a fully-transparent thin film transistor, wherein a transparent conductive gate electrode layer of the fully-transparent thin film transistor is used as a photolithographic mask, a photoresist is exposed through a rear surface of a transparent substrate, the transparent substrate has a transmittance higher than 60% to an exposure light beam, and the transparent conductive gate electrode layer has a transmittance lower than 5% to the exposure light beam. In the preparation method for a fully-transparent thin film transistor provided by the present invention, by using a self-aligned technology, the process complexity and the feature size of the device can both be reduced.

The present invention provides a preparation method for a fully-transparent thin film transistor, wherein a transparent conductive gate electrode layer of the fully-transparent thin film transistor is used as a photolithographic mask, a photoresist is exposed through a rear surface of a transparent substrate, the transparent substrate has a transmittance higher than 60% to an exposure light beam, and the transparent conductive gate electrode layer has a transmittance lower than 5% to the exposure light beam. In the preparation method for a fully-transparent thin film transistor provided by the present invention, by using a self-aligned technology, the process complexity and the feature size of the device can both be reduced.

An object is to provide a novel method in place of the above-described conventional technology, as a technique for obtaining a thin film with a wiring pattern applied. A method for manufacturing a wiring pattern according to the present invention is characterized in that the method includes: a laminate forming step of forming a laminate by bringing a first member that has a resist layer and a metal layer formed on the resist layer into contact with a second member that includes a substrate; a resist layer patterning step of subjecting the resist layer to patterning; and an etching step of selectively removing the metal layer.

A coating liquid for forming an oxide, the coating liquid including: A element, which is at least one alkaline earth metal; and B element, which is at least one selected from the group consisting of gallium (Ga), scandium (Sc), yttrium (Y), and lanthanoid, wherein when a total of concentrations of the A element is denoted by C.sub.A mg/L and a total of concentrations of the B element is denoted by C.sub.B mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (C.sub.A+C.sub.B)/10.sup.3 mg/L or less and a total of concentrations of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (C.sub.A+C.sub.B)/10.sup.3 mg/L or less.

Provided is a thin film transistor, a production method thereof, and an electronic apparatus. The thin film transistor comprises a substrate, and a gate electrode, a gate insulator layer, a source electrode, a drain electrode and an active layer on the substrate, wherein the active layer comprises a stack of two or more layers of graphene-like two-dimensional semiconductor material. The electronic apparatus comprises the thin film transistor, and may be used as an optical or mechanical sensor.