Provided is a thin film transistor, a production method thereof, and an electronic apparatus. The thin film transistor comprises a substrate, and a gate electrode, a gate insulator layer, a source electrode, a drain electrode and an active layer on the substrate, wherein the active layer comprises a stack of two or more layers of graphene-like two-dimensional semiconductor material. The electronic apparatus comprises the thin film transistor, and may be used as an optical or mechanical sensor.

A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device including a Group III-V semiconductor layer on a surface on a silicon carbide substrate, wherein the semiconductor device defines at least one via through the silicon carbide substrate and the epitaxial layer.

A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device including a Group III-V semiconductor layer on a surface on a silicon carbide substrate, wherein the semiconductor device defines at least one via through the silicon carbide substrate and the epitaxial layer.

Disclosed are an electronic device and a method of fabricating the same. The method of fabricating an electronic device comprises providing on a substrate a channel layer including a two-dimensional material, providing a metal fiber layer on a first surface of a conductive layer, providing the metal fiber layer on the channel layer, and performing a thermal treatment process to form a junction layer where a portion of the metal fiber layer is covalently bonded to a portion of the channel layer.

Disclosed are an electronic device and a method of fabricating the same. The method of fabricating an electronic device comprises providing on a substrate a channel layer including a two-dimensional material, providing a metal fiber layer on a first surface of a conductive layer, providing the metal fiber layer on the channel layer, and performing a thermal treatment process to form a junction layer where a portion of the metal fiber layer is covalently bonded to a portion of the channel layer.

There is provided a high gloss electrodeposited copper foil which can be manufactured in a short time. The electrodeposited copper foil has a fraction of the areas occupied by the {100} plane deviating by 18? or less from the <001> crystal orientation of 10% or more determined by analysis of the surface by electron backscatter diffraction (EBSD) and at least one surface of the electrodeposited copper foil has a glossiness G.sub.s (20?) of 1,500 or more, determined in accordance with JIS Z 8741-1997.

Provided is a thin film transistor, a production method thereof, and an electronic apparatus. The thin film transistor comprises a substrate, and a gate electrode, a gate insulator layer, a source electrode, a drain electrode and an active layer on the substrate, wherein the active layer comprises a stack of two or more layers of graphene-like two-dimensional semiconductor material. The electronic apparatus comprises the thin film transistor, and may be used as an optical or mechanical sensor.

Provided is a thin film transistor, a production method thereof, and an electronic apparatus. The thin film transistor comprises a substrate, and a gate electrode, a gate insulator layer, a source electrode, a drain electrode and an active layer on the substrate, wherein the active layer comprises a stack of two or more layers of graphene-like two-dimensional semiconductor material. The electronic apparatus comprises the thin film transistor, and may be used as an optical or mechanical sensor.

Disclosed are a thin film transistor including a substrate and a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, and a drain electrode formed on the substrate and a method of fabricating the thin film transistor, wherein the gate insulating film is made of a high dielectric ternary material, A.sub.2-XB.sub.XO.sub.3, wherein A is any one selected from the group consisting of aluminum, silicon, gallium, germanium, neodymium, gadolinium, vanadium, lutetium, and actinium, B is any one selected from the group consisting of yttrium, lanthanum, zirconium, hafnium, tantalum, titanium, vanadium, nickel, silicon, and ytterbium, and A is an element different from B. The gate insulating film may be formed through a solution process, and a high-quality insulating film may be obtained through heat treatment at low temperature.

Disclosed are a thin film transistor including a substrate and a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, and a drain electrode formed on the substrate and a method of fabricating the thin film transistor, wherein the gate insulating film is made of a high dielectric ternary material, A.sub.2-XB.sub.XO.sub.3, wherein A is any one selected from the group consisting of aluminum, silicon, gallium, germanium, neodymium, gadolinium, vanadium, lutetium, and actinium, B is any one selected from the group consisting of yttrium, lanthanum, zirconium, hafnium, tantalum, titanium, vanadium, nickel, silicon, and ytterbium, and A is an element different from B. The gate insulating film may be formed through a solution process, and a high-quality insulating film may be obtained through heat treatment at low temperature.