A lead frame includes: at least one ductile structure, including a bond area, a die paddle, or a lead finger; and at least one sacrificial structure, connected between a corresponding ductile structure and a corresponding near portion in the lead frame, wherein the near portion is a portion of the lead frame close to the ductile structure.

In one example, a semiconductor device comprises a substrate having a top surface and a bottom surface, an electronic device on the bottom surface of the substrate, a leadframe on the bottom surface of the substrate, the leadframe comprising a paddle, wherein the paddle is coupled to the electronic device, and a lead electrically coupled to the electronic device. The semiconductor device further comprises a first protective material contacting the bottom surface of the substrate and a side surface of the electronic device.

In some examples, a semiconductor package includes a semiconductor die having a device side and a non-device side opposing the device side. The device side has a circuit formed therein. The package includes a first conductive member having a first surface coupled to the non-device side of the semiconductor die and a second surface opposing the first surface. The second surface is exposed to a top surface of the semiconductor package. The package includes a second conductive member exposed to an exterior of the semiconductor package and coupled to the device side of the semiconductor die. The package includes a plurality of wirebonded members coupled to the second surface of the first conductive member and exposed to the exterior of the semiconductor package. At least one of the wirebonded members in the plurality of wirebonded members has a gauge of at least 5 mils.

In some examples, a semiconductor package comprises a semiconductor die; a conductive member coupled to the semiconductor die; and a wirebonded protrusion coupled to the conductive member. A physical structure of the wirebonded protrusion is determined at least in part by a sequence of movements of a wirebonding capillary used to form the wirebonded protrusion, the wirebonded protrusion including a ball bond and a bond wire, and the bond wire having a proximal end coupled to the ball bond. The bond wire has a distal end. The package also comprises a mold compound covering the semiconductor die, the conductive member, and the wirebonded protrusion. The distal end is in a common vertical plane with the ball bond and is not connected to a structure other than the mold compound.

A method for forming a through-substrate via structure includes providing a substrate and providing a conductive via structure adjacent to a first surface of the substrate. The method includes providing a recessed region on an opposite surface of the substrate towards the conductive via structure. The method includes providing an insulator in the recessed region and providing a conductive region extending along a first sidewall surface of the recessed region in the cross-sectional view. In some examples, the first conductive region is provided to be coupled to the conductive via structure and to be further along at least a portion of the opposite surface of the substrate outside of the recessed region. The method includes providing a protective structure within the recessed region over a first portion of the first conductive region but not over a second portion of the first conductive region that is outside of the recessed region. The method includes attaching a conductive bump to the second portion of the first conductive region.

An encapsulation of laser direct structuring (LDS) material is molded onto first and second semiconductor dice. A die-to-die coupling formation between the first and second semiconductor dice includes die vias extending through the LDS material to reach the first and second semiconductor dice and a die-to-die line extending at a surface of the encapsulation between the die vias. After laser activating and structuring selected locations of the surface of the encapsulation for the die vias and die-to-die line, the locations are placed into contact with an electrode that provides an electrically conductive path. Metal material is electrolytically grown onto the locations of the encapsulation by exposure to an electrolyte carrying metal cations. The metal cations are reduced to metal material via a current flowing through the electrically conductive path provided via the electrode. The electrode is then disengaged from contact with the locations having metal material electrolytically grown thereon.

An encapsulation of laser direct structuring (LDS) material is molded onto a substrate having first and second semiconductor dice arranged thereon. Laser beam energy is applied to a surface of the encapsulation of LDS material to structure therein die vias extending through the LDS material to the first and second semiconductor dice and a die-to-die line extending at surface of the LDS material between die vias. Laser-induced forward transfer (LIFT) processing is applied to transfer electrically conductive material to the die vias and the die-to-die line extending between die vias. A layer of electrically conductive material electroless grown onto the die vias and the die-to-die line facilitates improved adhesion of the electrically conductive material transferred via LIFT processing.

A lead frame includes: a frame body; a plurality of leads individually projecting from the frame body; and a recess formed across one surfaces of the leads adjacent to each other with the frame body therebetween, the recess including a first recess, and a second recess partially overlapping the first recess in a bottom surface thereof and having a smaller depth than the first recess.

A semiconductor device includes a semiconductor element, a sealing material, and an extension wire. The semiconductor element has, on a front surface, a first electrode pad and at least one second electrode pad, and generates a current in a direction connecting the front surface and a back surface. The sealing material is made of an insulating resin material and covers a part of the front surface and a side surface of the semiconductor element. The extension wire is disposed above the semiconductor element and inside the sealing material or on the sealing material. The extension wire is electrically connected to the second electrode pad, and extends from a position inside of a contour of the semiconductor element to a position outside of the contour of the semiconductor element.

A method of attaching a metal clip to a semiconductor die includes: aligning a first bonding region of the metal clip with a first bond pad of the semiconductor die; and while the first bonding region of the metal clip is aligned with the first bond pad of the semiconductor die, forming a plurality of first wire bonds to the first bond pad of the semiconductor die through a plurality of openings in the first bonding region of the metal clip, the plurality of first wire bonds forming a joint between the metal clip and the first bond pad of the semiconductor die. Additional methods and related semiconductor packages produced from such methods are also described.