A supporting structure is provided, which forms a protective layer on a metal member having a plurality of conductive posts, and the protective layer is exposed from end surfaces of the conductive posts, such that conductors are formed on the end surfaces of the conductive posts, thereby avoiding damage of the protective layer.

Semiconductor chips are arranged on an elongated substrate and encapsulated by an insulating encapsulation. Electrically conductive formations and electrically conductive plating lines are plated on the insulating encapsulation using, for example, Laser Direct Structuring (LDS) or Direct Copper Interconnect (DCI) material. The electrically conductive plating lines include first transverse plating lines as well as second plating lines branching out from the first plating lines towards the electrically conductive formations. A first partial cutting step is then performed to form grooves which remove the first plating lines. An insulating material is dispensed in the grooves to encapsulate the end portions of the second plating lines. A second cutting step median along the groove and through the elongate substrate is performed to produce singulated semiconductor devices (such as “die pad up” Quad-Flat No-lead (QFN) packages). End portions of the second plating lines are encapsulated by the insulating material.

An electronic device includes a package structure, a first lead and a second lead. The first lead has a first portion extending outward from a side of the package structure and downward, and a second portion extending outward from the first portion away from the package side. The second lead has a first portion extending outward from the package side and downward, and a second portion extending inward from the first portion toward the package side, and a distal end of the second lead is spaced from the package side.

After a distal end portion of a first lead of a first lead frame is connected to a first signal pad, and a distal end portion of a second lead is connected to a second signal pad, the interval between the linear portion of the first lead and the linear portion of the second lead is adjusted using a lead shape changing jig.

A semiconductor package structure, including a lead frame, a die disposed on the front side of the lead frame, and a molding piece disposed on the lead frame and encapsulates the die, wherein the lead frame is provided with two extension portions extending respectively from two sides of the molding piece, and the extension portion is provided with recessed front surface and back surface on which a plating layer is formed.

A lead frame includes a die pad, a plurality of leads, a frame member, and at least one wire. The frame member includes two first connection bars and two second connection bars. The plurality of leads include a plurality of specific leads. Each of the specific leads is connected to the first connection bar. At least one of the specific leads is connected to the second connection bar via the at least one wire.

A lead frame includes a die pad, a plurality of leads, at least one support lead, and a frame member. The frame member includes two first connection bars and two second connection bars. The plurality of leads include a plurality of specific leads. The plurality of specific leads are each connected to the first connection bar. At least one of the specific leads is connected to the second connection bar via the at least one support lead. The cross-sectional second-order moment of a cross section of the at least one support lead perpendicular to a Y direction around an X axis is equal to or more than the cross-sectional second-order moment of a cross section of the at least one support lead perpendicular to an X direction around a Y axis.

An electronic device includes a semiconductor die, an enclosure, leads extending outwardly from the enclosure and electrically connected to the semiconductor die, and wherein the leads have a reduced cross-sectional area along a longitudinal length of the lead. The electronic device is designed to reduce the occurrence of crack formation between the leads and a printed circuit board.

A microelectronics package assembly and process of making same are disclosed. The flange has an upper surface and a first coating disposed on the upper surface of the flange. The insulator has a bottom surface for mounting onto the flange and an upper surface opposite the bottom surface. A second coating is disposed on the bottom surface of the insulator and a third coating disposed on the upper surface of the insulator. The first coating, the second coating, and the third coating each have a thickness of less than or equal to 1 micron. At least one of the first coating, the second coating, and the third coating is applied via at least one of physical vapor deposition, atomic deposition, or chemical deposition.

An electronic package includes an electronic component including terminals, a plurality of leads, at least some of the leads being electrically coupled to the terminals within the electronic package, and a mold compound covering the electronic component and partially covering the leads. Each of the leads include an exposed bottom face coplanar with a bottom surface of the mold compound and an exposed end face coplanar with one of a plurality of side surfaces of the mold compound. For at least some of the leads, the exposed end face includes a narrow portion forming a concave recess, the narrow portion being between top and bottom edges of the exposed end face.