A semiconductor package includes a leadframe including a diepad and a first row of leads, wherein at least one lead of the first row of leads is physically separated from the diepad by a gap. The semiconductor package further includes a semiconductor component arranged on the leadframe. The semiconductor package further includes an encapsulation material encapsulating the leadframe and the semiconductor component, wherein the encapsulation material includes a bottom surface arranged at a bottom surface of the semiconductor package, a top surface and a side surface extending from the bottom surface to the top surface. A side surface of at least one lead of the first row of leads is flush with the side surface of the encapsulation material. The flush side surface of the at least one lead is covered by an electroplated metal coating.

A lead frame includes: at least one ductile structure, including a bond area, a die paddle, or a lead finger; and at least one sacrificial structure, connected between a corresponding ductile structure and a corresponding near portion in the lead frame, wherein the near portion is a portion of the lead frame close to the ductile structure.

A lead frame includes: leads; and a dambar arranged between the leads and connecting the leads to each other, wherein each of the leads includes: a lower lead groove formed in a first surface for a wettable flank structure; and an upper lead groove formed in a second surface opposite the first surface and aligned with the lower lead groove in a thickness direction, wherein in a sawing process, a portion of the lead between the lower lead groove and the upper lead groove is at least partially removed.

A pre-molded leadframe includes a laminar structure having empty spaces therein and a first thickness with a die pad having opposed first and second die pad surfaces. Insulating pre-mold material is molded onto the laminar structure. The pre-mold material penetrates the empty spaces and provides a laminar pre-molded substrate having the first thickness with the first die pad surface left exposed. The die pad has a second thickness that is less than the first thickness. One or more pillar formations are provided protruding from the second die pad surface to a height equal to a difference between the first and second thicknesses. With the laminar structure clamped between surfaces of a mold, the first die pad surface and pillar formations abut against the mold surfaces. The die pad is thus effectively clamped between the clamping surfaces countering undesired flashing of the pre-mold material over the first die pad surface.

A method of forming a package structure includes an etching step, a laser step, a plating step and a singulation step. In the etching step, a plurality of cutting streets of a leadframe are etched. In the laser step, a plastic package material covering on each of the cutting streets is removed via a laser beam. In the plating step, a plurality of plating surfaces are disposed on a plurality of areas of the leadframe without the plastic package material. In the singulation step, the cutting streets of the leadframe are cut to form the package structure.

In examples, a method of manufacturing a transformer device comprises providing a first magnetic member and providing a laminate member containing primary and secondary transformer windings wound around an orifice extending through the laminate member. The method further comprises positioning a build up film abutting the laminate member. The method also comprises positioning at least a portion of a second magnetic member in the orifice. The method further comprises heat pressing at least one of the first and second magnetic members such that a distance between the first and second magnetic members decreases and such that the build-up film melts, thereby producing a transformer device.

A first signal lead pin is bent such that one end is connected to a first signal line of a differential coplanar line, and the other end is apart from a mounting surface. A second signal lead pin is bent such that one end is connected to a second signal line of the differential coplanar line, and the other end is apart from the mounting surface. A ground lead pin is bent such that one end is connected to a ground line of the differential coplanar line, and the other end is apart from the mounting surface.

A lead frame includes a die pad that includes a mounting surface for a semiconductor chip, and a film-like member that is arranged on the mounting surface of the die pad. The die pad includes a through hole that is formed in an area that includes an outer periphery of the film-like member.

A package substrate processing method includes a holding step of holding a package substrate by a chuck table, a warp reducing step of, after the holding step is performed, reducing a warp in the package substrate by forming grooves of a first depth along planned dividing lines of the package substrate by using a first cutting blade, a groove forming step of forming grooves of, after the warp reducing step is performed, a second depth by further cutting the grooves of the first depth by using the first cutting blade, and a dividing step of, after the groove forming step is performed, forming packaged chips by further cutting the grooves of the second depth and thus dividing the package substrate by using a second cutting blade thinner than the first cutting blade.

A method of manufacturing a cascode HEMT semiconductor device including a lead frame, a die pad with an indentation attached to the lead frame, and a HEMT die attached to the die pad. The HEMT die includes a HEMT source and a HEMT drain on a first side, and a HEMT gate on a second side. The device further includes a MOSFET die attached to the source of the HEMT die, and the MOSFET die includes a MOSFET source, a MOSFET gate and a MOSFET drain. The MOSFET drain is connected to the HEMT source, and the MOSFET source includes a MOSFET source clip. The MOSFET source clip includes a pillar so to connect the MOSFET source to the HEMT gate, and the connection between the MOSFET source to the HEMT gate is established by a conductive material.