A semiconductor package includes a die attach pad; a plurality of lead terminals disposed around the die attach pad; a semiconductor die mounted on the die attach pad; a molding compound encapsulating the plurality of lead terminals, the semiconductor die, and the die attach pad; and a step cut sawn into the molding compound along a perimeter of a bottom surface of the semiconductor package. The step cut penetrates through an entire thickness of each of the plurality of lead terminals, whereby each of the plurality of lead terminals has at least an exposed outer end at the step cut.

A method for aligning interconnects that includes trimming and forming a frame of strips of interconnects. The frame of strips of interconnects includes interdigitated pins. The method also includes removing siderails from the frame of strips of interconnects to provide an array of strips of interconnects. The method includes aligning a first set of strips of interconnects in the array of strips of interconnects such that pins of the first set of strips of interconnects are aligned with pins of a second set of strips of interconnects in the array of strips of interconnects. A strip of interconnects of the first set of strips of interconnects are adjacent to a strip of interconnects of the second set of strips of interconnects to provide an aligned array of strips of interconnects. The method further includes singulating the aligned array of strips of interconnects.

A method of forming a packaged semiconductor device according to some embodiments includes providing a leadframe blank including a first package blank, a second package blank and a tie bar between the first package blank and the second package blank, forming a recessed cavity in the tie bar, and separating the first and second package blanks by sawing through the leadframe blank along the tie bar.

In a described example, an apparatus includes: a package substrate having a die pad configured for receiving a semiconductor die, and having conductive leads spaced from the die pad; a semiconductor die mounted on the die pad, the semiconductor die having bond pads on an active surface configured for making electrical connections; electrical connections coupling the bond pads of the semiconductor die to the conductive leads; mold compound covering a portion of the package substrate, the semiconductor die, and the electrical connections, with the leads extending through the mold compound and having end portions exposed from the mold compound; and the leads having a first portion with a first width and extending with the first width from the mold compound to a second portion having a second width that greater than the first width.

In examples, a semiconductor device comprises a semiconductor die, an opaque mold compound housing covering the semiconductor die, a conductive terminal extending from the mold compound housing, and an insulative coat covering the mold compound housing and at least a portion of the conductive terminal.

The third side surface includes inclined surfaces inclined in a direction in which a center in an up-down direction of the third side surface is convex. The mold resin further includes a residual section provided in the center of the third side surface and a dowel section provided between the inclined surface and the residual section. The dowel section projects further in a lateral direction than the inclined surface. The residual section further projects in the lateral direction than the dowel section and has a fracture surface perpendicular to the up-down direction.

A semiconductor device includes: a semiconductor element; a mold member covering the semiconductor element; and a first terminal and a second terminal electrically connected to the semiconductor element, protruding from one side of the mold member, and alternating along the one side. The first terminal includes a first bend, and the second terminal includes: a second bend located further from the one side of the mold member than the first bend, and having the same width as the first bend in plan view.

One example described herein includes a method for fabricating integrated circuit (IC) packages. The method includes fabricating a plurality of IC dies and providing a conductive metal material sheet. The method also includes laser-cutting the conductive metal material sheet to form a lead-frame sheet. The lead-frame sheet includes at least one of through-holes and three-dimensional locking features. The method further includes coupling the IC dies to the lead-frame sheet and coupling the lead-frame sheet and the IC dies to packaging material to form an IC package block comprising the IC packages.

According to a first aspect of the present invention there is provided a quad-flat-no-leads (QFN) packaged semiconductor device having a QFN bottom surface and QFN side faces, wherein the QFN side faces each comprise an upper portion and a recessed lower portion, the QFN packaged semiconductor device comprising: a die pad within or on the QFN bottom surface; a plurality of I/O terminals spaced apart from the die pad and around a periphery of the bottom surface, each having a bottom face extending from an inner end to a peripheral end, an exposed side face on a QFN side face and extending above the recessed lower portion of the QFN side face; wherein the QFN bottom surface includes at least one trench therein, parallel to a one of the QFN side faces and exposing at least a part of a side face of the inner end of the I/O terminals. The trench may provide for additional surface area, and provide a stronger solder joint when the QFN packaged semiconductor device is soldered to a substrate or circuit board.

Methods of forming a semiconductor device comprising a lead-frame having a die pad having at least one electrically conductive die pad area and an insulating layer applied onto the electrically conductive die pad area. An electrically conductive layer is applied onto the insulating layer with one or more semiconductor dice coupled, for instance adhesively, to the electrically conductive layer. The electrically conductive die pad area, the electrically conductive layer and the insulating layer sandwiched therebetween form at least one capacitor integrated in the device. The electrically conductive die pad area comprises a sculptured structure with valleys and peaks therein; the electrically conductive layer comprises electrically conductive filling material extending into the valleys in the sculptured structure of the electrically conductive die pad area.