Interconnect structures having alternating dielectric caps and an etchstop liner for semiconductor devices and methods for manufacturing such devices are described. According to an embodiment, an interconnect structure may include an interlayer dielectric (ILD) with a first hardmask layer over a top surface of the ILD. The interconnect structure may also include one or more first interconnect lines in the ILD. A first dielectric cap may be positioned above a top surface of each of the first interconnect lines. Additional embodiments include one or more second interconnect lines in the ILD that are arranged in an alternating pattern with the first interconnect lines. A second dielectric cap may be formed above a top surface of each of the second interconnect lines. Embodiments may also include an etchstop liner that is formed over top surfaces of the first dielectric caps.

An improvement is achieved in the reliability of a semiconductor device. After a resin sealing portion is formed to seal a die pad, a semiconductor chip mounted over the die pad, a plurality of leads, and a plurality of wires electrically connecting a plurality of pad electrodes of the semiconductor chip with the leads, the resin sealing portion and the leads are cut with a rotary blade to manufacture the semiconductor device. In the semiconductor device, at least a portion of each of first and second leads is exposed from a lower surface of the sealing portion. End surfaces of the first and second leads as the respective cut surfaces thereof are exposed from each of side surfaces of the sealing portion as the cut surfaces of the resin sealing portion. The distance between a lower side of the end surface of the first lead and an upper surface of the sealing portion is smaller than the distance between an upper side of the end surface of the second lead adjacent thereto and the upper surface of the sealing portion.

A microelectronic package may be fabricated with at least one compliant external bond pad having at least one integrated spring structure for mitigating the effects of warpage of the microelectronic package during attachment to an external substrate. An embodiment for the microelectronic package may include a microelectronic package substrate having a first surface and an opposing second surface, wherein the microelectronic package substrate includes a void defined therein that extends into the microelectronic package substrate from the second surface thereof, and a compliant bond pad suspended over the void, wherein the compliant bond pad includes a land portion and at least one spring portion, and wherein the at least one spring portion extends from the compliant bond pad land portion to an anchor structure on the microelectronic package substrate second surface.

The present description relates to the field of fabricating microelectronic packages, wherein a microelectronic device may be attached to a microelectronic substrate with a compensator to control package warpage. The warpage compensator may be a low coefficient of thermal expansion material, including but not limited to silicon or a ceramic material, which is positioned on a land-side of the microelectronic device to counteract the thermal expansion effects of the microelectronic device.

Disclosed herein is an electronic circuit package includes a substrate having a power supply pattern, a first electronic component mounted on a first region of a front surface of the substrate, a mold resin that covers the front surface of the substrate so as to embed the first electronic component therein and has a concave portion above the first region, a magnetic film selectively provided in the concave portion, and a first metal film that is connected to the power supply pattern and covers the mold resin.

An apparatus includes a package, a wall and a lid. The package may be configured to mount two chips configured to generate one or more signals in a millimeter-wave frequency range. The wall may be formed between the two chips. The wall generally has a plurality of conductive arches that attenuate an electromagnetic coupling between the two chips in the millimeter-wave frequency range. The lid may be configured to enclose the chips to form a cavity.

A semiconductor package includes a substrate having a first surface, a second surface opposite the first surface, and interconnect patterns disposed therein, a semiconductor device mounted on the first surface of the substrate, a layer of sealing resin sealing the semiconductor device, a plurality of external connection electrodes formed on the second surface of the substrate, an electromagnetic wave shield film for blocking electromagnetic waves, which is formed on an upper surface of the layer of sealing resin and side surfaces of the layer of sealing resin and the substrate, and a ground interconnect formed on the substrate and electrically connected to the electromagnetic wave shield film.

A method for manufacturing an interconnect structure and an interconnect structure are provided. The method includes: forming an opening in a substrate; forming a low-k dielectric block in the opening; forming at least one via in the low-k dielectric block; and forming a conductor in the via. The interconnect structure includes a substrate, a dielectric block, and a conductor. The substrate has an opening therein. The dielectric block is present in the opening of the substrate. The dielectric block has at least one via therein. The dielectric block has a dielectric constant smaller than that of the substrate. The conductor is present in the via of the dielectric block.

An interconnect structure includes a substrate, a dielectric block, and a conductor. The dielectric block is in the substrate. A dielectric constant of the dielectric block is smaller than a dielectric constant of the substrate, and the dielectric block and the substrate have substantially the same thickness. The conductor includes a first portion extending from a top surface to a bottom surface of the dielectric block and a second portion extending along and contacting the top surface of the dielectric block.

Various multi-die arrangements and methods of manufacturing the same are disclosed. In one aspect, a method of manufacturing a semiconductor chip device is provided. A redistribution layer (RDL) structure is fabricated with a first side and second side opposite to the first side. An interconnect chip is mounted on the first side of the RDL structure. A first semiconductor chip and a second semiconductor chip are mounted on the second side of the RDL structure after mounting the interconnect chip. The RDL structure and the interconnect chip electrically connect the first semiconductor chip to the second semiconductor chip.