An interconnect structure includes a substrate, a dielectric layer on the substrate, a metal interconnect layer in the dielectric layer and in contact with the substrate, the metal interconnect layer having an upper surface flush with an upper surface of the dielectric layer, and a graphene layer on the metal interconnect layer. The graphene layer insulates a metal from air and prevents the metal from being oxidized by oxygen in the air, thereby increasing the queue time for the CMP process and the device reliability.

According to various examples, a semiconductor package is described including a substrate raiser with interconnect vias that may be positioned on the bottom side of a substrate and mini solder balls positioned on the interconnect vias and a plurality of large solder balls positioned on the bottom side of the substrate adjacent to the substrate raiser, wherein the mini solder balls and the large solder balls extend approximately a same height from the substrate for mounting on a printed circuit board.

A semiconductor device includes a first chip package, a heat dissipation structure and an adapter. The first chip package includes a semiconductor die laterally encapsulated by an insulating encapsulant, the semiconductor die has an active surface and a back surface opposite to the active surface. The heat dissipation structure is connected to the chip package. The adapter is disposed over the first chip package and electrically connected to the semiconductor die.

An electronic assembly (100) includes a mechanical carrier (102), a plurality of integrated circuits (104A, 104B) disposed on the mechanical carrier, a fan out package (108) disposed on the plurality of integrated circuits, a plurality of singulated substrates (112A, 112B) disposed on the fan out package, a plurality of electronic components (114A, 114B) disposed on the plurality of singulated substrates, and at least one stiffness ring (116A, 116B, 116C) disposed on the plurality of singulated substrates. A method for constructing an electronic assembly includes identifying a group of known good singulated substrates, joining the group of known good singulated substrates into a substrate panel, attaching at least one bridge to the substrate panel that electrically couples at least two of the known good singulated substrates, and mounting a plurality of electronic components onto the substrate panel, each electronic component of the plurality of electronic components corresponding to a respective known good singulated substrate.

Various circuit boards and methods of fabricating and using the same are disclosed. In one aspect, a circuit board is provided that has a substrate with a pocket and a conductor layer. A chiplet is positioned in the pocket. The chiplet has plural bottom side interconnects electrically connected to the conductor layer and plural top side interconnects adapted to interconnect with two or more semiconductor chips.

A method of manufacturing a component for a stretchable electronic device comprises providing a silicon wafer comprising a first surface and a second surface; applying a layer of a conductive metal onto at least a portion of the first surface of the silicon wafer; providing a stretchable silicone substrate having a first surface and a second surface; and plasma bonding at least a portion of the second surface of the silicon wafer to at least a portion of the first surface of the stretchable silicone substrate.

An interconnect structure includes a first conductor, a second conductor, a dielectric block, a substrate, and a pair of conductive lines. The first conductor and the second conductor form a differential pair design. The dielectric block surrounds the first conductor and the second conductor. The first conductor is separated from the second conductor by the dielectric block. The substrate surrounds the dielectric block and is spaced apart from the first conductor and the second conductor. The pair of conductive lines is connected to the first conductor and the second conductor, respectively, and extends along a top surface of the dielectric block and a top surface of the substrate.

A system and method of using electrochemical additive manufacturing to add interconnection features, such as wafer bumps or pillars, or similar structures like heatsinks, to a plate such as a silicon wafer. The plate may be coupled to a cathode, and material for the features may be deposited onto the plate by transmitting current from an anode array through an electrolyte to the cathode. Position actuators and sensors may control the position and orientation of the plate and the anode array to place features in precise positions. Use of electrochemical additive manufacturing may enable construction of features that cannot be created using current photoresist-based methods. For example, pillars may be taller and more closely spaced, with heights of 200 μm or more, diameters of 10 μm or below, and inter-pillar spacing below 20 μm. Features may also extend horizontally instead of only vertically, enabling routing of interconnections to desired locations.

A composite component that includes an interposer structure and an electronic component. The interposer structure includes a Si base layer having a first main surface and a second main surface facing each other, a rewiring layer on the first main surface, a through Si via electrically connected to the rewiring layer and penetrating the Si base layer, an interposer electrode facing the second main surface, and an adhesive layer. The electronic component has a surface and a component electrode on the surface and connected to the through Si via, and is located between the interposer electrode and the Si base layer such that the component electrode and the surface are adhered to the second main surface of the Si base layer with the adhesive layer interposed therebetween. The through Si via extends from the second main surface, penetrates the adhesive layer, and is electrically connected to the component electrode.

Described herein are methods and systems for forming metal interconnect layers (MILs) on engineered templates and transferring these MILs to device substrates. This “off-device” approach of forming MILs reduces the complexity and costs of the overall process, allows using semiconductor processes, and reduces the risk of damaging the device substrates. An engineered template is specially configured to release a MIL when the MIL is transferred to a device substrate. In some examples, the engineered template does not include barrier layers and/or adhesion layers. In some examples, the engineered template comprises a conductive portion to assist with selective electroplating. Furthermore, the same engineered template may be reused to form multiple MILs, having the same design. During the transfer, the engineered template and device substrate are stacked together and then separated while the MIL is transitioned from the engineered template to the device substrate.