An interconnect structure includes a substrate, a dielectric block, and a conductor. The dielectric block is in the substrate. A dielectric constant of the dielectric block is smaller than a dielectric constant of the substrate, and the dielectric block and the substrate have substantially the same thickness. The conductor includes a first portion extending from a top surface to a bottom surface of the dielectric block and a second portion extending along and contacting the top surface of the dielectric block.

An electronic assembly (100) includes a mechanical carrier (102), a plurality of integrated circuits (104A, 104B) disposed on the mechanical carrier, a fan out package (108) disposed on the plurality of integrated circuits, a plurality of singulated substrates (112A, 112B) disposed on the fan out package, a plurality of electronic components (114A, 114B) disposed on the plurality of singulated substrates, and at least one stiffness ring (116A, 116B, 116C) disposed on the plurality of singulated substrates. A method for constructing an electronic assembly includes identifying a group of known good singulated substrates, joining the group of known good singulated substrates into a substrate panel, attaching at least one bridge to the substrate panel that electrically couples at least two of the known good singulated substrates, and mounting a plurality of electronic components onto the substrate panel, each electronic component of the plurality of electronic components corresponding to a respective known good singulated substrate.

A semiconductor device includes a first chip package, a heat dissipation structure and an adapter. The first chip package includes a semiconductor die laterally encapsulated by an insulating encapsulant, the semiconductor die has an active surface and a back surface opposite to the active surface. The heat dissipation structure is connected to the chip package. The adapter is disposed over the first chip package and electrically connected to the semiconductor die.

The disclosure is and includes at least an apparatus, system and method for a ramped electrical interconnection for use in semiconductor fabrications. The apparatus, system and method includes at least a first semiconductor substrate having thereon a first electrical circuit comprising first electrical components; a second semiconductor substrate at least partially covering the first electrical circuit, and having thereon a second electrical circuit comprising second electrical components; a ramp formed through the second semiconductor substrate between at least one of the first electrical components and at least one of the second electrical components; and an additively manufactured conductive trace formed on the ramp to electrically connect the at least one first electrical component and the at least one second electrical component.

A semiconductor device includes: a lead frame that has one end in contact with the upper surface of the second terminal of the semiconductor element in the sealing portion, and that has the other end exposed from the sealing portion; and a control conductive bonding material that bonds between the upper surface of the second terminal of the semiconductor element and the one end of the lead frame, and the control conductive bonding material having electric conductivity.

A structure may include a first material, a second material joined to the first material at a junction between the first and second materials, and one or more media extending across the junction to form a continuous interconnect between the first and second materials, wherein the first and second materials are heterogeneous. The structure may further include a transition at the junction between the first and second materials. The one or more media may include a functional material which may be electrically conductive. The structure may further include a third material joined to the second material at a second junction between the second and third materials, the media may extend across the second junction to form a continuous interconnect between the first, second, and third materials, and the second and third materials may be heterogeneous.

There is provided a semiconductor device including: a lead frame including a first opening portion; a resin filled in the first opening portion; and a semiconductor element electrically connected to the lead frame, wherein a side wall surface of the lead frame in the first opening portion has a larger average surface roughness than an upper surface of the lead frame.

A semiconductor device is a substrate inserted lead-type semiconductor device to be mounted through insertion of a plurality of lead terminals into a plurality of respective through holes of a substrate. The semiconductor device includes: an energization controller including a semiconductor element and wiring; a sealing resin to cover the energization controller; and the lead terminals each having one end side connected to the energization controller and the other end side protruding from the sealing resin. The lead terminals each have a protrusion formed on a part of the other end side protruding from the sealing resin.

A semiconductor device has a first conductive layer and a semiconductor die disposed adjacent to the first conductive layer. An encapsulant is deposited over the first conductive layer and semiconductor die. An insulating layer is formed over the encapsulant, semiconductor die, and first conductive layer. A second conductive layer is formed over the insulating layer. A first portion of the first conductive layer is electrically connected to V.sub.SS and forms a ground plane. A second portion of the first conductive layer is electrically connected to V.sub.DD and forms a power plane. The first conductive layer, insulating layer, and second conductive layer constitute a decoupling capacitor. A microstrip line including a trace of the second conductive layer is formed over the insulating layer and first conductive layer. The first conductive layer is provided on an embedded dummy die, interconnect unit, or modular PCB unit.

A microelectronic package may be fabricated with at least one compliant external bond pad having at least one integrated spring structure for mitigating the effects of warpage of the microelectronic package during attachment to an external substrate. An embodiment for the microelectronic package may include a microelectronic package substrate having a first surface and an opposing second surface, wherein the microelectronic package substrate includes a void defined therein that extends into the microelectronic package substrate from the second surface thereof, and a compliant bond pad suspended over the void, wherein the compliant bond pad includes a land portion and at least one spring portion, and wherein the at least one spring portion extends from the compliant bond pad land portion to an anchor structure on the microelectronic package substrate second surface.