Embodiments of heat spreaders with integrated preforms, and related devices and methods, are disclosed herein. In some embodiments, a heat spreader may include: a frame formed of a metal material, wherein the metal material is a zinc alloy or an aluminum alloy; a preform secured in the frame, wherein the preform has a thermal conductivity higher than a thermal conductivity of the metal material; and a recess having at least one sidewall formed by the frame. The metal material may have an equiaxed grain structure. In some embodiments, the equiaxed grain structure may be formed by squeeze-casting or rheocasting the metal material.

Embodiments may relate to a microelectronic package that includes an integrated heat spreader (IHS) coupled with a package substrate. The microelectronic package may further include a sealant material between the package substrate and the IHS. The sealant material may be formed of a material that cures when exposed to ultraviolet (UV) wavelengths. Other embodiments may be described or claimed.

Electronics assemblies and methods of manufacturing electronics assemblies having improved thermal performance. One example of these electronics assemblies includes a printed circuit board (PCB), an integrated circuit package mounted to the PCB, the integrated circuit packing having a heat generating component, and a heat spreader soldered to the PCB such that the heat spreader is thermally coupled to the heat generating component of the integrated circuit package to dissipate heat generated by the heat generating component.

A power module includes at least two power units. Each power unit includes at least one power semiconductor and a substrate. In order to reduce the installation space required for the power module and to improve cooling, the at least one power semiconductor is connected, in particular in a materially bonded manner, to the substrate. The substrates of the at least two power units are each directly connected in a materially bonded manner to a surface of a common heat sink. A power converter having at least one power module is also disclosed.

A heat dissipation apparatus is provided. The apparatus includes: a bracket assembly including an accommodation portion used for accommodating a heat source component, a first opening, and a second opening; a heat sink. A heat conducting protrusion is disposed on a first surface of the heat sink, and the heat conducting protrusion extends into the accommodation portion through the second opening; and guide grooves are respectively provided in two side surfaces of the heat sink, and an extension direction of the guide grooves is inclined toward the first surface in an insertion direction of the heat source component; and fastening assemblies, each including a connecting member and a pressing member, where the pressing members are disposed on two sides of the bracket assembly, one end of the connecting member is slidably assembled in a guide groove located on a same side, and the other end abuts against a pressing member.

A heat dissipation device includes a base plate and a plurality of fins arranged on the base plate. Each fin includes a fin body including a first metal sheet and a second metal sheet coupled to each other, wherein the fin body is curved and includes a first portion and a second portion transverse to the first portion, an evaporation channel defined in the first portion, one or more connecting channels disposed in the first portion and in fluid communication with the evaporation channel, a condensation channel defined in the second portion, and one or more auxiliary channels disposed in the second portion and in fluid communication with the one or more connecting channels and the condensation channel.

A composite assembly of three stacked joining partners, and a corresponding method. The three stacked joining partners are materially bonded to one another by an upper solder layer and a lower solder layer. An upper joining partner and a lower joining partner are fixed in their height and have a specified distance from one another. The upper solder layer is fashioned from a first solder agent, having a first melt temperature, between the upper joining partner and a middle joining partner. The second solder layer is fashioned from a second solder agent, having a higher, second melt temperature, between the middle joining partner and the lower joining partner. The upper joining partner has an upwardly open solder compensating opening filled with the first solder agent, from which, to fill the gap between the upper joining partner and the middle joining partner, the first solder agent subsequently flows into the gap.

A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a lid and outer flanges. The lid overlies the semiconductor package. The outer flanges are disposed at edges of the lid, are connected with the lid, extend from the lid towards the circuit substrate, and face side surfaces of the semiconductor package. The lid has a first region that is located over the semiconductor package and is thicker than a second region that is located outside a footprint of the semiconductor package.

Methods, systems, apparatus, and articles of manufacture to control load distribution of integrated circuit packages are disclosed. An example apparatus includes a carrier plate including a first surface to face a heatsink; a second surface opposite the first surface, and an aperture extending between the first and second surfaces, the aperture dimensioned to surround a semiconductor device, and a spring carried by the carrier plate, the spring to contact a surface of the semiconductor device proximate an outer edge of the semiconductor device.

Semiconductor three-dimensional integrated circuit packages and methods of forming the same are disclosed herein. A method includes bonding a semiconductor chip package to a substrate and depositing a thermal interface material on the semiconductor chip package. A thermal lid may be placed over and adhered to the semiconductor chip package by the thermal interface material. The thermal lid includes a wedge feature interfacing the thermal interface material. The thermal lid may be adhered to the semiconductor chip package by curing the thermal interface material.