A package structure and the method thereof are provided. At least one die is molded in a molding compound. A ground plate is located on a backside surface of the die, a first surface of the ground plate is exposed from the molding compound and a second surface of the ground plate is covered by the molding compound. The first surface of the ground plate is levelled and coplanar with a third surface of the molding compound. A connecting film is located between the backside surface of the die and the second surface of the ground plate. The die, the molding compound and the ground plate are in contact with the connecting film. Through interlayer vias (TIVs) are molded in the molding compound, and at least one of the TIVs is located on and physically contacts the second surface of the ground plate.

A method of generating a wire loop profile in connection with a semiconductor package is provided. The method includes the steps of: (a) providing package data related to the semiconductor package; and (b) creating a loop profile of a wire loop of the semiconductor package, the loop profile including a tolerance band along at least a portion of a length of the wire loop.

A semiconductor and a method of fabricating the semiconductor having multiple, interconnected die including: providing a semiconductor substrate having a plurality of disparate die formed within the semiconductor substrate, and a plurality of scribe lines formed between pairs of adjacent die of the plurality of disparate die; and fabricating, by a lithography system, a plurality of inter-die connections that extend between adjacent pair of die of the plurality of die.

A semiconductor and a method of fabricating the semiconductor having multiple, interconnected die including: providing a semiconductor substrate having a plurality of disparate die formed within the semiconductor substrate, and a plurality of scribe lines formed between pairs of adjacent die of the plurality of disparate die; and fabricating, by a lithography system, a plurality of inter-die connections that extend between adjacent pair of die of the plurality of die.

A semiconductor and a method of fabricating the semiconductor having multiple, interconnected die including: providing a semiconductor substrate having a plurality of disparate die formed within the semiconductor substrate, and a plurality of scribe lines formed between pairs of adjacent die of the plurality of disparate die; and fabricating, by a lithography system, a plurality of inter-die connections that extend between adjacent pair of die of the plurality of die.

Disclosed a chip packaging structure and a manufacturing method thereof. The chip packaging structure comprises: a metal heat dissipation layer; a chip structure located on an upper surface of the heat dissipation layer and comprising a plurality of first electrical contacts on an upper surface of the chip structure; a pin layer comprising a plurality of second electrical contacts and a plurality of separate metal bumps, wherein the plurality of second electrical contacts are located lower surfaces of the plurality of metal bumps, and the plurality of second electrical contacts are coupled to the plurality of first electrical contacts of the chip structure through a plurality of conductive pillars; and an encapsulant encapsulating at least one portion of the chip structure, the metal heat dissipation layer and the pin layer, wherein at least one portion of the pin layer is exposed to an upper surface of the encapsulant, and an lower surface of the metal heat dissipation layer is exposed outside the encapsulant. The metal heat dissipation layer includes a flange on the side surface for tightly combining the metal heat dissipation layer and the encapsulant. By using a pattern plating process, a pin layer or a distribution layer is formed, and on the premise that the performance of the chip packaging structure is guaranteed, the manufacturing process can be simplified and the manufacturing cost is reduced.

A method of generating a wire loop profile in connection with a semiconductor package is provided. The method includes the steps of: (a) providing package data related to the semiconductor package; and (b) creating a loop profile of a wire loop of the semiconductor package, the loop profile including a tolerance band along at least a portion of a length of the wire loop.

A method for preparing fan-out antenna packaging structure, includes: providing a carrier and a release layer structure; forming a single-layer antenna structure and a redistribution layer on an upper surface of the release layer; disposing a semiconductor chip electrically connected with the redistribution layer; forming a leading-out conducting wire on the redistribution layer at least on one side of the semiconductor chip; forming a plastic packaging layer wrapping the chip and the leading-out conducting wire; removing part of the plastic packaging layer to expose the chip and the leading-out conducting wire; forming an under-bump metal layer and a solder ball bump on an upper surface of the plastic packaging layer; removing the carrier and the release layer to expose the single-layer antenna structure; soldering a substrate on the solder ball bump; and forming a layer of cooling fins on a second surface of the semiconductor chip.

A method of producing electronic components including at least one circuit having coupled therewith electrical connections including metallic wire bondable surfaces encased in a packaging, the method including bonding stud bumps, in particular copper stud bumps, at determined areas of said wire bondable surfaces.

A semiconductor device has a substrate and a plurality of bond wires is disposed in a pattern across on the substrate. The pattern of bond wires can be a plurality of rows of bond wires. A plurality of electrical components is disposed over the substrate as an SIP module. An encapsulant is deposited over the substrate, electrical components, and bond wire. An opening is formed in the encapsulant extending to the bond wire. The opening can be a trench extending across the bond wires disposed on the substrate, or a plurality of openings individually exposing each of a plurality of bond wires. A conductive material is disposed in the opening. A shielding layer is formed over the encapsulant and in contact with the conductive material. The shielding layer, conductive material, and bond wires reduce the effects of EMI, RFI, and other inter-device interference.