An electronics package includes an insulating substrate, an electrical component having a back surface coupled to a first surface of the insulating substrate, and an insulating structure surrounding at least a portion of a perimeter of the electrical component. A first wiring layer extends from the first surface of the insulating substrate and over a sloped side surface of the insulating structure to electrically couple with at least one contact pad on an active surface of the electrical component. A second wiring layer is formed on a second surface of the insulating substrate and extends through at least one via therein to electrically couple with the first wiring layer.

A package structure and the method thereof are provided. The package structure includes a conductive plate, a semiconductor die, a molding compound, and antenna elements. The conductive plate has a first surface, a second surface and a sidewall connecting the first surface and the second surface. The semiconductor die is located on the second surface of the conductive plate. The molding compound laterally encapsulates the semiconductor die and covers the sidewall and a portion of the second surface exposed by the semiconductor die, wherein the first surface of the conductive plate is coplanar with a surface of the molding compound. The antenna elements are located over the first surface of the conductive plate.

A semiconductor memory device includes: a local write bit (LWB) line; a local write bit_bar (LWB_bar) line; a global write bit (GWB) line; a global write bit_bar (GWBL_bar) line; a column of segments, each segment including bit cells; each of the bit cells including a latch circuit and first and second pass gates connecting the corresponding LWB and LWB_bar lines to the latch circuit; and a distributed write driving arrangement. The distributed write driving arrangement includes: a global write driver including a first inverter connected between the GWB line and the LWB line, and a second inverter connected between the GWB_bar line and the LWB_bar line; and a local write driver included at an interior of each segment, each local write driver including a third inverter connected between the GWB line and the LWB line; and a fourth inverter connected between the GWB_bar line and the LWB_bar line.

A method of producing electronic components including at least one circuit having coupled therewith electrical connections including metallic wire bondable surfaces encased in a packaging, the method including bonding stud bumps, in particular copper stud bumps, at determined areas of said wire bondable surfaces.

An electronic device structure having a shielding structure includes a substrate with an electronic component electrically connected to the substrate. The shielding structure includes conductive spaced-apart pillar structures that have proximate ends connected to the substrate and distal ends spaced apart from the substrate, and that are laterally spaced apart from the first electronic component. In one embodiment, the conductive pillar structures are conductive wires attached at one end to the substrate with an opposing end extending away from the substrate so that the conductive wires are provided generally perpendicular to the substrate. A package body encapsulates the electronic component and the conductive spaced-apart pillar structures. In one embodiment, the shielding structure further includes a shielding layer disposed adjacent to the package body, which is electrically connected to the conductive spaced-apart pillar structures. In one embodiment, the electrical connection is made through the package.

A semiconductor memory device includes: a local write bit (LWB) line; a local write bit_bar (LWB_bar) line; a global write bit (GWB) line; a global write bit_bar (GWBL_bar) line; a column of segments, each segment including bit cells; each of the bit cells being coupled correspondingly between the LWB and LWB_bar lines; and a distributed write driving arrangement including local write drivers correspondingly coupled to the segments; and a global write driver coupled to each of the local write drivers.

A method includes aligning a wire with a package body having a contact pad and moving the wire through the package body to form electrical contact with the contact pad.

A component such as an interposer or microelectronic element can be fabricated with a set of vertically extending interconnects of wire bond structure. Such method may include forming a structure having wire bonds extending in an axial direction within one of more openings in an element and each wire bond spaced at least partially apart from a wall of the opening within which it extends, the element consisting essentially of a material having a coefficient of thermal expansion (CTE) of less than 10 parts per million per degree Celsius (ppm/ C.). First contacts can then be provided at a first surface of the component and second contacts provided at a second surface of the component facing in a direction opposite from the first surface, the first contacts electrically coupled with the second contacts through the wire bonds.

A method of manufacturing a semiconductor device is provided. The method includes attaching a first die pad of a semiconductor die to a central pad of a package leadframe. The first die pad is located in a central region on an active side of the semiconductor die. A second die pad of the semiconductor die is connected a lead of the package lead frame. The second die pad is located in a periphery region on the active side of the semiconductor die. An encapsulant encapsulates a portion of the semiconductor die and a portion of the package leadframe. A backside surface of the semiconductor die is exposed at a top major surface of the encapsulant, and a backside surface of the central pad exposed at a bottom major surface of the encapsulant.

The present disclosure relates to a semiconductor package and a manufacturing method thereof, and a manufacturing method of a semiconductor package according to an embodiment includes: preparing a glass substrate that includes a groove and a hole positioned around the groove; forming a conductive connection member to fill inside the hole of the glass substrate; attaching a semiconductor chip inside the groove of the glass substrate; forming a first redistribution structure for connection with the semiconductor chip and the conductive connection member on a first side of the glass substrate; and forming a second redistribution structure for connection with the conductive connection member on a second side of the glass substrate.