Techniques for providing a unified underfill and encapsulation for integrated circuit die assemblies. These techniques include a molding technique that includes dipping a die assembly including a substrate and one or more dies into a chamber having molding material, sealing the chamber, and lowering pressure in the chamber to coax the molding material into space between the die(s) and substrate. The use of this molding technique, as contrasted with a capillary underfill technique in which underfill material is laid down adjacent dies and fills space under the die via capillary action, provides several benefits. One benefit is that the molding material can include a higher silica particle filler content (% by weight) than the material for the capillary underfill technique, which improves CTE. Another benefit is that various design constraints related to, for example, warpage and partial underfill are eliminated or improved.

Disclosed are release films for a semiconductor package and manufacturing methods thereof. A release film for a semiconductor package may include a first polyurethane layer portion and a second polyurethane layer portion disposed on the first polyurethane layer portion. The first polyurethane layer portion may have a first surface opposite to the second polyurethane layer portion, and the first surface may have a first fine unevenness for releasability. The second polyurethane layer portion may have a second surface opposite to the first polyurethane layer portion, and the second surface may have a second fine unevenness for releasability. The first and second polyurethane layer portions may include thermosetting polyurethane having cross-linkage. An intermediate layer portion may be further disposed between the first polyurethane layer portion and the second polyurethane layer portion.

A temporary protective film for semiconductor encapsulation molding includes a support film and an adhesive layer. The adhesive layer contains a thermoplastic resin and a low-molecular-weight additive having a molecular weight of less than 1000. The adhesive layer is configured to contain the low-molecular-weight additive so that X2 is smaller than X1 when X1 is a proportion of an oxygen atom in a surface of a copper plate as determined after the temporary protective film is bonded to the surface of the copper plate in a direction in which the adhesive layer comes into contact with the copper plate to form a bonded body having the copper plate and the temporary protective film, and then the bonded body is initially heated at 180° C. for 1 hour, while X2 is a proportion of the oxygen atom in the surface of the copper plate as determined after the bonded body is subjected to a thermal treatment at 400° C. for 2 minutes subsequent to the initial heating.

One or more electronic devices that are mounted on a substrate, including at least one cooling plate in contact with the one or more electronic devices, are encapsulated. The substrate is clamped between a first mold half and a second mold half which define a molding cavity for molding the one or more electronic devices. A cavity insert movably located in the first mold half is projected into the cavity in order to contact and apply a sealing pressure onto the at least one cooling plate. After introducing a molding compound into the cavity at a first fill pressure, the molding compound in the cavity is packed by applying a second fill pressure which is higher than the first fill pressure. During this time, the sealing pressure is maintained at values that are higher than the first fill pressure and the second fill pressure.

A method of forming a semiconductor device is provided. The method includes placing a semiconductor die and routing structure on a carrier substrate. At least a portion of the semiconductor die and routing structure are encapsulated with an encapsulant. A cavity formed in the encapsulant. A top portion of the routing structure is exposed through the cavity. A conductive trace is formed to interconnect the semiconductor die with the routing structure.

A molding compound dispensing system identifies a semiconductor device strip having a substrate with a plurality of segments allocated for die stacks. The system obtains topological data of the identified semiconductor device strip for each of the segments, including data indicative of any semiconductor components in each respective segment. The system determines an amount of molding compound to be applied to each of the segments based on the topological data for each respective segment, and causes a molding compound dispenser to dispense the determined amounts of molding compound at each of the segments.

A semiconductor device includes a substrate with an opening formed through the substrate. A first electronic component is disposed over the substrate outside a footprint of the first opening. A second electronic component is disposed over the substrate opposite the first electrical component. A third electronic component is disposed over the substrate adjacent to the first electronic component. The substrate is disposed in a mold including a second opening of the mold over a first side of the substrate. The mold contacts the substrate between the first electronic component and the third electronic component. An encapsulant is deposited into the second opening. The encapsulant flows through the first opening to cover a second side of the substrate. In some embodiments, a mold film is disposed in the mold, and an interconnect structure on the substrate is embedded in the mold film.

Disclosed is a method for fabricating a semiconductor package. A mold press with upper and lower chases is used. A molded underfill (MUF) material is dispensed on a bottom surface of a mold cavity to form a first dispensed pattern with a serpentine shape. A base substrate on which die stacks are mounted is loaded on the upper chase. The mold cavity in which the die stacks are inserted is closed and MUF material flows between the die stacks to impregnate the die stacks.

Provided is a semiconductor device free from chipping of a thin semiconductor element during transportation. The semiconductor device includes: a thin semiconductor element including a front-side electrode on the front side of the semiconductor element, and including a back-side electrode on the back side of the semiconductor element; a metallic member formed on at least one of the front-side electrode and the back-side electrode, the metallic member having a thickness equal to or greater than the thickness of the semiconductor element; and a resin member in contact with the lateral side of the metallic member and surrounding the periphery of the metallic member, with a part of the front side of the semiconductor element being exposed.

Structures and formation methods of a chip package are provided. The method includes forming multiple conductive structures over a carrier substrate and disposing a semiconductor die over the carrier substrate. The method also includes disposing a mold over the carrier substrate. The method further includes forming a protection layer between the mold and the carrier substrate to surround the semiconductor die and the conductive structures. In addition, the method includes removing the mold.