A method includes placing a coupling mechanism material layer on a backside of a wafer having power devices fabricated on a frontside thereof, and placing conductive spacer blocks on the coupling mechanism material layer on a backside of the selected wafer. The method further includes activating the coupling mechanism material to bond the conductive spacer blocks to the backside of the selected wafer, and singulating the wafer to separate the vertical device stacks, each of the singulated vertical device stacks including a device die bonded to, or fused with, a conductive spacer block.

A semiconductor package structure has a first electronic component on an insulating layer, a dielectric layer on the insulating layer and surrounding the first electronic component, a second electronic component stacked on the first electronic component, wherein an active surface of the first electronic component faces an active surface of the second electronic component, a molding compound on the first electronic component and surrounding the second electronic component, a third electronic component stacked on the second electronic component and the molding compound.

Semiconductor devices are provided in which a first semiconductor device is bonded to a second semiconductor device. The bonding may occur at a gate level, a gate contact level, a first metallization layer, a middle metallization layer, or a top metallization layer of either the first semiconductor device or the second semiconductor device.

A leadless package with wettable flanks is formed by providing a substrate and plating a metal layer onto the substrate to form a contact on the substrate extending across a saw street. An encapsulant is deposited over the contact. The substrate is removed to expose the contact and encapsulant. The encapsulant and contact are singulated. In some embodiments, the substrate includes a ridge, and the contact is formed over the ridge.

A thermal bonding sheet includes a pre-sintering layer containing copper particles and polycarbonate.

A leadless package with wettable flanks is formed by providing a substrate and plating a metal layer onto the substrate to form a contact on the substrate extending across a saw street. An encapsulant is deposited over the contact. The substrate is removed to expose the contact and encapsulant. The encapsulant and contact are singulated. In some embodiments, the substrate includes a ridge, and the contact is formed over the ridge.

The present invention relates to a method for producing a metal-ceramic substrate. The method has the following steps: providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, wherein the solder material has: a metal having a melting point of at least 700? C., a metal having a melting point of less than 700? C., and an active metal; and heating the stack, wherein at least one of the following conditions is satisfied: the high temperature heating duration is no more than 60 min; the peak temperature heating duration is no more than 30 min; the heating duration is no more than 60 min.

Performance of a semiconductor device is improved. A semiconductor device 1 includes a die pad 2a made of a conductive material, a semiconductor chip CHI provided on an upper surface of the die pad 2a, and a semiconductor chip CH3. The semiconductor chip CHI has a gate pad electrode GP1 and a drain pad electrode DP1, and the semiconductor chip CH3 has a pad electrode AP1. A conductive layer 3 is provided on each upper surface of the gate pad electrode GP1 and the pad electrode AP1 so as to be electrically connected to the gate pad electrode GP1 and the pad electrode AP1. The die pad 2a, the semiconductor chip CH1, the semiconductor chip CH3, and the conductive layer 3 are sealed with a resin layer 5 such that an upper surface of the conductive layer 3 and a lower surface of die pad 2a are exposed. A passive element member 7 including one or more passive elements is provided on upper surfaces of the two conductive layers 3.

Provided is a solder transfer sheet which is capable of increasing the amount of solder to be transferred without the occurrence of bridging. A solder transfer sheet 1A includes a base material 5, an adhesive layer 4 formed on the surface of the base material 5, a solder powder-containing adhesive layer 3 formed on the surface of the adhesive layer 4, and a solder powder layer 2 formed on the surface of the solder powder-containing adhesive layer 3. In the solder powder layer 2, particles of solder powder 20 are arranged in a one-layer sheet form. In the solder powder-containing adhesive layer 3, solder powder 30 and an adhesive component 31 are mixed so as to have such a thickness that two or more layers of the solder powder 30 are stacked.

In order to produce a power semiconductor module, a circuit carrier is populated with a semiconductor chip and with an electrically conductive contact element. After populating, the semiconductor chip and the contact element are embedded into a dielectric embedding compound, and the contact element is exposed. In addition, an electrically conductive base layer is produced which electrically contacts the exposed contact element and which bears on the embedding compound and the exposed contact element. A prefabricated metal film is applied to the base layer by means of an electrically conductive connection layer.