Various embodiments herein relate to methods and apparatus for depositing silicon oxide using thermal ALD or thermal CVD. In one aspect of the disclosed embodiments, a method for depositing silicon oxide is provided, the method including: (a) receiving the substrate in a reaction chamber; (b) introducing a first flow of a first reactant into the reaction chamber and exposing the substrate to the first reactant, where the first reactant includes a silicon-containing reactant; (c) introducing a second flow of a second reactant into the reaction chamber to cause a reaction between the first reactant and the second reactant, (i) where the second reactant includes hydrogen (H2) and an oxygen-containing reactant, (ii) where the reaction deposits silicon oxide on the substrate, and (iii) where the reaction is initiated when a pressure in the reaction chamber is greater than 10 Torr and equal to or less than about 40 Torr.

In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.

Embodiments of processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: depositing, via a first epitaxial growth process, an n-doped silicon material onto a substrate to form an n-doped layer while adjusting a ratio of dopant precursor to silicon precursor so that a dopant concentration of the n-doped layer increases from a bottom of the n-doped layer to a top of the n-doped layer; etching the n-doped layer to form a plurality of trenches having sidewalls that are tapered and a plurality of n-doped pillars therebetween; and filling the plurality of trenches with a p-doped material via a second epitaxial growth process to form a plurality of p-doped pillars.

A device for maintaining cleanliness in a vacuum environment during semiconductor manufacture in a device storing and transferring wafers into etching and other manufacturing processes includes a transferring chamber storing wafers, a vacuum system to extract particles from the transferring chamber, and a thermoelectric device for temperature control. The vacuum system includes an extracting pipe, the thermoelectric device includes a cooling apparatus to cool the transferring chamber, and a monitoring device to detect particle concentrations in the transferring chamber. The cooling apparatus includes Peltier elements arranged on the extracting pipe to cool and thus cause the descent of fumes and particles towards a low-set extraction area.

Interconnect structures on a substrate have low resistivity and high dopant interfaces. In some embodiments, the structures may have an opening with a sidewall from an upper surface to an underlying metallic layer of copper, a barrier layer of tantalum nitride formed on the sidewall of the opening, a liner layer of cobalt or ruthenium formed on the barrier layer and on the underlying metallic layer, a first copper layer with a dopant with a first dopant content formed on the liner layer and filling a lower portion of the opening to form a via-the first dopant content is approximately 0.5 percent to approximately 10 percent, and a second copper layer with the dopant with a second dopant content formed on the first copper layer and filling the at least one opening—the second dopant content is more than zero to approximately 0.5 percent of the dopant and is less than the first dopant content.

A film forming apparatus for forming a laminated structure on a substrate to form a magnetic tunnel junction element is disclosed. The film forming apparatus comprises: a plurality of processing chambers where a magnetic layer and an insulating layer are formed on the substrate; a heat treatment chamber where a magnetic field is applied to the substrate to perform heat treatment; a vacuum transfer chamber that connects the processing chambers and the heat treatment chamber; and a controller.

A vacuum substrate transport apparatus including a frame, a drive section having a drive axis, at least one arm, having an end effector for holding a substrate, having at least one degree of freedom axis effecting extension and retraction, and a bearing defining a guideway that defines the axis, the bearing including at least one rolling load bearing element disposed in a bearing case, interfacing between a bearing raceway and bearing rail to support arm loads, and effecting sliding of the case along the rail, and at least one rolling, substantially non-load bearing, spacer element disposed in the case, intervening between each of the load bearing elements, wherein the spacer element is a sacrificial buffer material compatible with sustained substantially unrestricted service commensurate with a predetermined service duty of the apparatus in a vacuum environment at temperatures over 260° C. for a specified predetermined service period.

The substrate processing apparatus includes a suction holding mechanism, a rotation mechanism, a plurality of lift pins, a vertical movement mechanism, and a horizontal movement mechanism. The suction holding mechanism sucks and holds a substrate. The rotation mechanism rotates the suction holding mechanism holding the substrate about the rotation axis. The vertical movement mechanism moves the plurality of lift pins in the vertical direction. A sensor measures the eccentric state of the substrate W held by the suction holding mechanism. The vertical movement mechanism supports the substrate from the suction holding mechanism by moving the plurality of lift pins and the horizontal movement mechanism moves the plurality of lift pins based on the eccentric state of the substrate measured by the sensor in a state where the substrate is supported.

The present disclosure provides a substrate transfer apparatus. According to an aspect of the present disclosure, the substrate transfer apparatus includes: a planar motor provided in a transfer chamber and having coils arranged therein; a transfer unit movable on the planar motor; and a control unit configured to control an energization of the coils. The transfer unit includes two bases having magnets arranged thereon and configured to be movable on the planar motor, a substrate support member configured to support a substrate, and a link mechanism configured to connect the two bases and the substrate support member to each other.

A travel robot for moving a substrate transfer robot in a vacuum chamber, includes: a travel arm platform through which coupling holes are formed, wherein an elevating drive shaft is inserted into a lower space of one of the coupling holes; a first travel arm part including a (1_1)-st and a (1_2)-nd travel link arms; a second travel arm part including a (2_1)-st and a (2_2)-nd travel link arms, wherein travel driving motors and speed reducers are installed in the (1_1)-st and the (2_1)-st travel link arms; and a transfer robot coupling part engaged with the (1_2)-nd and the (2_2)-nd travel link arms, wherein a rotation driving motor built thereon is engaged with the substrate transfer robot by a rotation drive shaft.