Patent classifications
H01L21/67167
Computer storage medium to perform a substrate treatment method using a block copolymer containing a hydrophilic and hydrophobic copolymers
A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.
Substrate transport apparatus
A substrate transport apparatus including, a torsional motion driver member having an exterior perimeter circumscribing an axis of rotation of the torsional motion driver member, and a torsional motion follower member including a body portion and a bearing collar rotatably coupled to the body portion, the torsional motion follower member being coupled to the torsional motion driver member with a dimensionally substantially invariant interface, wherein the bearing collar is decoupled from the exterior perimeter of the torsional motion driver member so that the exterior perimeter, as a whole, is free of the bearing collar.
Memory cell fabrication for 3D NAND applications
Embodiments of the present disclosure provide an apparatus and methods for forming stair-like structures with accurate profiles and dimension control for manufacturing three dimensional (3D) stacked memory cell semiconductor devices. In one embodiment, a memory cell device includes a film stack comprising alternating pairs of dielectric layers and conductive structures horizontally formed on a substrate, and an opening formed in the film stack, wherein the opening is filled with a metal dielectric layer, a multi-layer structure and a center filling layer, wherein the metal dielectric layer in the opening is interfaced with the conductive structure.
WAFER NOTCH POSITIONING DETECTION
An optical system may include a light source to provide a beam of light. The optical system may include a reflector to receive and redirect the beam of light. The optical system may include a light gate having an opening to permit the beam of light, from the reflector, to travel through the opening. The optical system may include a light sensor to receive a portion of the beam of light after the beam of light travels through the opening, and convert the portion of the beam of light to a signal. The optical system may include a processing device to determine whether a notch of a wafer is in an allowable position based on the signal.
High-density substrate processing systems and methods
Exemplary substrate processing systems may include a factory interface and a load lock coupled with the factory interface. The systems may include a transfer chamber coupled with the load lock. The transfer chamber may include a robot configured to retrieve substrates from the load lock. The systems may include a chamber system positioned adjacent and coupled with the transfer chamber. The chamber system may include a transfer region laterally accessible to the robot. The transfer region may include a plurality of substrate supports disposed about the transfer region. Each substrate support of the plurality of substrate supports may be vertically translatable. The transfer region may also include a transfer apparatus rotatable about a central axis and configured to engage substrates and transfer substrates among the plurality of substrate supports. The chamber system may also include a plurality of processing regions vertically offset and axially aligned with an associated substrate support.
PMOS HIGH-K METAL GATES
Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 Å to less than or equal to 50 Å. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO.sub.2 as a high-κ metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.
SUBSTRATE PROCESSING SYSTEM AND GROUP MANAGEMENT DEVICE
A substrate processing system includes substrate processing apparatuses and a group management device. The substrate processing apparatuses each include a plan creating section. The plan creating section creates a plan indicating a timing when a processing liquid is used and a flow rate of the processing liquid. The processing liquid is supplied to the substrate processing apparatuses from a single resource system. The group management device includes a processing section. The processing section determines whether the total flow rate of the processing liquid to be used by the substrate processing apparatuses exceeds a threshold value based on the plans created by the substrate processing apparatuses. When determining that the total flow rate exceeds the threshold value, the processing section instructs one of the substrate processing apparatuses to adjust the plan thereof.
SEAL MECHANISMS FOR LOAD PORTS
The disclosure describes devices and systems for a two-sided seal for a load port, and methods for using said seal. A factory interface for an electronic device manufacturing system can include a load port for receiving a substrate carrier. The load port can include a frame adapted for connecting the load port to a factory interface, the frame comprising a transport opening. The load port can also include a seal coupled to the frame. The seal can include a first contact point configured to engage with a load port door when the load port door is in a first position, and configured to disengage with the load port door when the load port door is in a second position and a second contact point configured to engage with a front of a substrate carrier when the substrate carrier is docked on the load port.
GATE VALVE, SUBSTRATE PROCESSING SYSTEM, AND METHOD OF OPERATING GATE VALVE
A gate valve provided in a boundary portion between two sections to block communication between the two sections, the gate valve includes a base, a first moving mechanism installed on the base and configured to move a first movement body along a first linear track, a second moving mechanism installed on the first movement body, and configured to operate at a timing different from the first moving mechanism and to move a second movement body along a second linear track orthogonal to the first linear track, and a valve body installed on the second movement body and configured to come into contact with a contact surface so as to perform sealing. One of the first linear track and the second linear track is parallel to a direction orthogonal to the contact surface.
ROBOT FOR SIMULTANEOUS SUBSTRATE TRANSFER
Exemplary substrate processing systems may include a transfer region housing defining an internal volume. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a plurality of substrate supports disposed within the transfer region. The systems may also include a transfer apparatus having a central hub including a first shaft and a second shaft concentric with and counter-rotatable to the first shaft. The transfer apparatus may include a first end effector coupled with the first shaft. The first end effector may include a plurality of first arms. The transfer apparatus may also include a second end effector coupled with the second shaft. The second end effector may include a plurality of second arms having a number of second arms equal to the number of first arms of the first end effector.