A method of manufacturing a vertical memory device includes forming a first sacrificial layer on a substrate, the first sacrificial layer including a first insulating material, forming a mold including an insulation layer and a second sacrificial layer alternately and repeatedly stacked on the first sacrificial layer, the insulation layer and the second sacrificial layer including second and third insulating materials, respectively, different from the first insulating material, forming a channel through the mold and the first sacrificial layer, forming an opening through the mold and the first sacrificial layer to expose an upper surface of the substrate, removing the first sacrificial layer through the opening to form a first gap, forming a channel connecting pattern to fill the first gap, and replacing the second sacrificial layer with a gate electrode.

An apparatus for treating a substrate includes a chamber having a treating space formed therein, a substrate support unit that supports the substrate in the treating space, a plate that is located to face the substrate support unit in the treating space and that has a plurality of holes formed therein, a gas supply unit that supplies gas into the treating space through the holes, and a gas exhaust unit that exhausts the gas in the treating space through the holes.

A substrate processing apparatus includes a bake chamber, a chamber door that opens and closes an opening of the bake chamber, a first support plate in the bake chamber, a first partition wall, which partitions a space provided on the first support plate into first heat treatment spaces spaced apart from each other in a first horizontal direction, and extends in a second horizontal direction and a vertical direction, first heat treatment modules arranged in the first heat treatment spaces, a first exhaust duct extending in the first horizontal direction across the first heat treatment spaces, a first sealing bracket coupled to the first exhaust duct, a first horizontal packing configured to seal a gap between the first sealing bracket and the chamber door, and a first vertical packing configured to seal a gap between the first partition wall and the chamber door.

A processing system is provided, including a vacuum enclosure having a plurality of process windows and a continuous track positioned therein; a plurality of processing chambers attached sidewalls of the vacuum enclosures, each processing chamber about one of the process windows; a loadlock attached at one end of the vacuum enclosure and having a loading track positioned therein; at least one gate valve separating the loadlock from the vacuum enclosure; a plurality of substrate carriers configured to travel on the continuous track and the loading track; at least one track exchanger positioned within the vacuum enclosure, the track exchangers movable between a first position, wherein substrate carriers are made to continuously move on the continuous track, and a second position wherein the substrate carriers are made to transfer between the continuous track and the loading track.

A transport apparatus includes a hand, a drive mechanism, a cover member, and a gas supply member. The hand is configured to hold a wafer. The drive mechanism is configured to transport the wafer by moving the hand. The cover member has an opposing surface opposed to a surface of the wafer held by the hand and is formed with a plurality of holes opened in the opposing surface. The gas supply member is configured to supply an inert gas to the surface of the wafer via the plurality of holes of the cover member. The plurality of holes are formed in the opposing surface so that an opening ratio of an outer peripheral portion of the opposing surface is higher than an opening ratio of a central portion of the opposing surface.

An apparatus includes first load ports 2A and 2B and second load ports 2C and 2D provided in a left-right direction; a processing unit D2; an inspection module 4 provided between the first load ports 2A and 2B and the second load ports 2C and 2D; a first substrate transfer mechanism 5A provided at one side of the inspection module 4 in the left-right direction, and configured to transfer a substrate W into the processing unit D2 and a transfer container C on the first load ports 2A and 2B; a second substrate transfer mechanism 5B provided at the other side thereof, and configured to transfer the substrate W into the inspection module 4 and a transfer container C on the second load ports 2C and 2D; and a transit unit 51 for transferring the substrate W between the first and the second substrate transfer mechanisms 5A and 5B.

Provided is a support unit including a support plate on which the substrate is placed, and a support protrusion provided on the support plate and separating the substrate from the support plate, wherein the support plate includes a first protrusion protruding from an upper surface of the support plate, wherein the first protrusion is provided in a support region provided by the support protrusion.

A substrate processing apparatus includes a liquid processing module, including a carry-out/in port of a substrate, in which a first liquid processing device and a second liquid processing device provided at a position farther from the carry-out/in port than the first liquid processing device is are provided; and a transfer device configured to carry the substrate out from and into the liquid processing module. The first liquid processing device performs a first liquid processing on the substrate. The second liquid processing device performs a second liquid processing on the substrate before or after the first liquid processing. The transfer device includes a substrate holder configured to be moved back and forth in a first horizontal direction, and carries the non-processed substrate into the first liquid processing device through the carry-out/in port and carries the processed substrate out from the first liquid processing device through the carry-out/in port.

A substrate processing apparatus includes a polishing member having a polishing surface configured to perform a polishing of a main surface of a substrate; a first dressing member having a first dressing surface configured to perform a dressing of the polishing surface; a second dressing member having a second dressing surface configured to perform a dressing of the first dressing surface; a holding member configured to hold the polishing member and the second dressing member; and a driving unit configured to, by moving the holding member, switch a first state in which the first dressing surface and the polishing surface come into contact with each other to perform the dressing of the polishing surface and a second state in which the first dressing surface and the second dressing surface come into contact with each other to perform the dressing of the first dressing surface.

A substrate processing apparatus includes processing units, an exhaust path, a gas processing apparatus and a controller. Each processing unit is configured to process a substrate by using a chemical. A gas exhausted from the processing units flows through the exhaust path. The gas processing apparatus is provided in the exhaust path to remove a target component contained in the gas. The gas processing apparatus includes a duct, a partition plate and a liquid supply. The duct has therein a flow path. The partition plate divides the flow path into spaces, and is formed of a porous material, through which the gas passes, configured to retain a liquid. The liquid supply is configured to supply a dissolving liquid configured to dissolve the target component to the partition plate. The controller adjusts a flow rate of the dissolving liquid according to operation information indicating an operational status of the processing units.