The substrate has a plurality of chip regions each being provided with a structure to be a power device, and is provided with a to-be-processed film. The thickness profile of the to-be-processed film in the radial direction is measured by scanning with the sensor in the radial direction while the substrate is rotated. The average thickness of the thickness profile is calculated. At least one radial position where the thickness profile has an average thickness is extracted as at least one candidate position. At least one of the at least one candidate position is determined to be at least one measurement position. Processing liquid is supplied from a nozzle onto the to-be-processed film of the substrate while the substrate is rotated. The sensor monitors the time-dependent change in the thickness of the to-be-processed film in at least one measurement position while the substrate is rotated.

The present invention provides a substrate treating apparatus. The substrate treating apparatus includes: a liquid treatment chamber configured to treat a substrate with a liquid; a drying chamber configured to dry the liquid-treated substrate; a transfer robot configured to transfer the substrate between the liquid treatment chamber and the drying chamber, and including a hand which is movable along an X-axis, a Y-axis, and a Z-axis and is rotatably driven based on the Z-axis, and on which the substrate is placed; an optical system configured to photograph a form of a liquid film of the substrate, in which when the substrate is transferred from the liquid treatment chamber to the drying chamber, the substrate is wetted with a chemical liquid and is transferred by the transfer robot in a state of being formed with a liquid film formed; and a controller configured to measure the form of the liquid film photographed by the optical system.

A substrate processing apparatus includes: a rotary holder configured to hold and rotate a substrate; a liquid supplier including a nozzle that ejects a processing liquid; a driver configured to move the nozzle between a center of the substrate and a peripheral portion of the substrate; and a controller configured to: execute a supply control to supply the processing liquid to the surface of the substrate so as to form a supply trajectory in a spiral shape, by ejecting the processing liquid from the nozzle while rotating the substrate and moving the nozzle from the center of the substrate toward the peripheral portion of the substrate; and when executing the supply control, gradually reduce an ejection amount of the processing liquid per unit area on the surface of the substrate, at least in a portion forming an outermost periphery of the supply trajectory.

A substrate processing apparatus for processing a substrate to be measured by a film thickness measurement device, includes: a heat treatment part configured to heat-treat a substrate coated with a coating film; and a fluid supply part configured to supply a fluid, which suppresses variations in a film thickness over time until the film thickness is measured by the film thickness measurement device, to the substrate during or after the heat-treatment by the heat treatment part.

A substrate treating method for treating substrates with a substrate treating apparatus having an indexer section, a treating section and an interface section includes performing resist film forming treatment in parallel on a plurality of stories provided in the treating section and performing developing treatment in parallel on a plurality of stories provided in the treating section.

A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the antireflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO.sub.2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.

A substrate processing system installed on a floor face is provided. The substrate processing system includes a substrate transfer module, a supporting table including a top plate disposed separately from the floor face, a plurality of substrate processing modules disposed on the top plate and coupled to the substrate transfer module along a lateral side of the substrate transfer module, and a plurality of power units disposed below the top plate. Further, the plurality of power units correspond to the plurality of substrate processing modules, respectively, and each of the power units is configured to supply electric power to the corresponding processing module.

A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a treating bath having an accommodation space for accommodating a treating liquid; a support member configured to support at least one substrate in a vertical posture at the accommodation space; and a posture changing robot configured to change a posture of a substrate immersed in the treating liquid from the vertical posture to a horizontal posture, and wherein the posture changing robot comprises: a body configured to hold the substrate thereon; and a liquid supply member configured to supply a wetting liquid to the substrate placed on the body.

The apparatus includes a plurality of process chambers having treatment spaces configured to process the substrate in the treatment spaces, and an exhaust unit to exhaust gas from the treatment space. The exhaust unit includes a plurality of individual exhaust pipes directly connected to the treatment spaces in one process chamber or the plurality of process chambers, a main exhaust pipe connected to the plurality of individual exhaust pipes, a pressure reducing member installed in the main exhaust pipe to reduce pressure of the treatment space, and a damper member mounted in each of the individual exhaust pipes to adjust an amount of gas exhausted through the individual exhaust pipe. The damper member includes a first damper to adjust an amount of gas exhausted from the treatment spaces, and a second damper disposed downstream of the first damper to buffer a pressure change caused by adjusting the first damper.