Provided is a pump for supplying a liquid. The pump includes: a tube including a pump chamber communicating with a chemical liquid inlet and a chemical liquid outlet, and configured to discharge a chemical liquid through a change in volume due to contraction and expansion; and a driving unit contracting or expanding the tube in a longitudinal direction, in which the tube includes: a flexible tube body including a pump chamber which has an increased internal volume when is contracted in a longitudinal direction and has a decreased internal volume when is expanded in the longitudinal direction, and which has a jar shape of which a radius is increased from the chemical liquid inlet to a center of the pump chamber, and the radius is decreased from the pump chamber to the chemical liquid outlet; a first flange provided at one end of the tube body and including the chemical liquid inlet; and a second flange provided at the other end of the tube body and including the chemical liquid outlet.

An information processing method includes obtaining information on a deformation factor of a surface of a target substrate; obtaining a surface image of the target substrate; calculating a correction coefficient for correcting an image change due to deformation of the surface, based on the information on the deformation factor of the surface; and generating a corrected image of the target substrate by correcting the surface image of the target substrate using the correction coefficient.

A substrate accommodating unit is disposed adjacent to each of consecutively arranged vacuum transfer units. The substrate accommodating unit includes a hollow housing having, on one sidewall in an arrangement direction of the vacuum transfer units, a loading/unloading port for loading/unloading a substrate into/from the adjacent vacuum transfer unit, a vertically movable partition member disposed in the housing, and a driving mechanism for vertically moving the partition member. When an inner space of the housing is divided horizontally into a first space on a loading/unloading port side and a second space on an opposite side of the loading/unloading port side, the partition member is vertically moved from a state where the first space and the second space communicate with each other to thereby airtightly separate the first space and the second space with the partition member.

A transfer robot assembly arranged within an ATV transfer module includes a transfer robot that includes an end effector and one or more arm segments connected between the end effector and a transfer robot platform. A first robot alignment arm is connected to the transfer robot platform. A second robot alignment arm is connected to the first robot alignment arm and to a mounting chassis of the ATV transfer module. The transfer robot assembly is configured to actuate the first robot alignment arm and the second robot alignment arm to raise and lower the transfer robot to adjust a position of the transfer robot in a vertical direction and in a horizontal direction. The transfer robot is configured to fold into a folded configuration having a narrow profile occupying less than 50% of an overall depth of the ATV transfer module.

A substrate processing apparatus includes an inner chamber formed by an upper portion and a lower portion, a substrate support to support a substrate within the upper portion of the inner chamber, a plasma system to provide the inner chamber with plasma species from the top side of the inner chamber, and an outer chamber surrounding the upper portion of the inner chamber. The lower portion of the inner chamber extends to the outside of the outer chamber and remains uncovered by the outer chamber.

A heat treatment unit U2 includes a heat plate 20 configured to place a wafer W thereon and heat the wafer W placed thereon; multiple gap members 22 formed along a front surface 20a of the heat plate 20 on which the wafer W is placed, and configured to support the wafer W to secure a clearance V between the heat plate 20 and the wafer W; a suction unit 70 configured to suck the wafer W toward the heat plate 20; and an elevating pin 51 configured to penetrate the heat plate 20 and configured to be moved up and down to move the wafer W placed on the heat plate 20 up and down. The front surface 20a of the heat plate 20 has a concave region 20d inclined downwards from an outer side toward an inner side thereof.

A substrate treatment line is disclosed. The substrate treatment line may include a chamber portion including a plurality of treatment chambers stacked in a vertical direction, and a vertical return robot, including a plurality of gripping portions, to transfer a plurality of substrates in a vertical direction simultaneously and load or unload the substrates to the treatment chambers.

A substrate cleaning line and a substrate cleaning system including the same are disclosed. The substrate cleaning line may include a chamber portion including a plurality of cleaning chambers to clean a substrate, and a first return robot to load, unload, or transfer the substrate from or to the plurality of cleaning chambers, wherein the cleaning chambers may be stacked on each other in a vertical direction.

A method for processing a semiconductor wafer is provided. The method includes transferring the semiconductor wafer above a wafer placement device having a plate to align an edge of the semiconductor wafer with a first buffer member positioned in a peripheral region of the plate and to align a center of the semiconductor wafer with a second buffer member positioned in a central region of the plate. Each of the first buffer member and the second buffer member has a stiffness that is less than that of the plate. The method further includes lowering down the semiconductor wafer to place the semiconductor wafer over the plate.

A technique for obtaining good film quality in forming a silicon-oxide-containing insulating film as a coating film on a substrate. A coating liquid containing polysilazane is applied to a wafer, a solvent in the coating liquid is volatilized, and then the coating film is irradiated with ultraviolet rays under a nitrogen atmosphere before performing a curing process. Thus, dangling bonds are likely to be formed at hydrolyzed portions in polysilazane. Since dangling bonds are formed in advance at portions in silicon to be hydrolyzed, productivity of hydroxyl groups is enhanced. That is, since an energy required for hydrolysis is reduced, the number of the portions remaining without being hydrolyzed is reduced even when the curing process is performed at a low temperature. Therefore, dehydration synthesis occurs efficiently, which increases a crosslinking rate and makes it possible to form a dense (good film quality) insulating film.