A plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, and including a lower electrode, an electrostatic chuck, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; a driving device; an upper electrode disposed above the substrate support. In an example, the apparatus further comprises a source RF power supply; a bias RF power supply configured to supply bias RF power to the lower electrode; at least one conductor; a DC power supply; an RF filter electrically; and a controller configured to control the driving device and the at least one variable passive element, and adjust an incident angle of an ion in the plasma with respect to an edge area of the substrate mounted on the electrostatic chuck.

A substrate for a tool including at least one sidewall includes at least one diamond layer. The diamond layer has a thickness between 10 nanometers and 1000 nanometers and is formed from diamond grains sized to be 50% or less of diamond layer thickness, with the diamond coating being deposited on the surface of the substrate over the at least one sidewall.

In an embodiment, a method includes performing a first atomic layer deposition (ALD) process to form a first material layer over a first blank wafer, the first ALD process comprising: performing a first precursor sub-cycle using a first precursor; performing a first purge sub-cycle using a inert gas; and performing a second precursor sub-cycle using a second precursor and the inert gas; and performing a second purge sub-cycle for a first duration over a second blank wafer different from the first blank wafer using the inert gas to deposit first defects onto the second blank wafer.

A scanning system includes a scanning chamber; a first rotary drive disposed in the scanning chamber and configured to rotate around a first axis; a second rotary drive disposed in the scanning chamber and configured to rotate around the first axis synchronously with the first rotary drive; and a bar-and-hinge system disposed in the scanning chamber and mechanically coupled to a substrate holder, the hinge system configured to translate a rotary motion of the first rotary drive and the second rotary drive to a planar motion of the substrate holder.

An apparatus and a method for non-destructive inspection of quality of an electrostatic chuck are disclosed. The apparatus includes a measurement unit for measuring a first capacitance of a dielectric layer of the electrostatic chuck and for measuring a second capacitance of an electrode installed in the dielectric layer; and a control unit configured to evaluate quality of the electrode, based on the first capacitance and the second capacitance.

The inventive concept provides a support unit for supporting a substrate. The support unit includes a heating unit for heating the substrate, and wherein the heating unit includes: a plurality of heating members; and a plurality of first power lines and a plurality of second power lines providing a supply and return pathway for a power to and from the plurality of heating members, and wherein the plurality of second power lines are connected to each of the plurality of first power lines through the plurality of heating members, and at least two heating members are connected to each first power line and at least two heating members are connected to each second power line, and at least two heating members are connected in parallel between each first power line and each second power line.

A method for forming a semiconductor device is provided. The method for forming a semiconductor device is provided. The method includes coating a photoresist film over a target layer; performing a lithography process to pattern the photoresist film into a photoresist layer; performing a directional ion bombardment process to the photoresist layer, such that a carbon atomic concentration in the photoresist layer is increased; and etching the target layer using the photoresist layer as an etch mask.

A method of detecting a deviation amount of a substrate transport position includes: setting a temperature of a substrate support surface to the same temperature over an entire substrate support surface; etching a first etching target film formed on a substrate; acquiring a first etching rate that is an etching rate of the first etching target film; setting the temperature of the substrate support surface to be concentrically and gradually increased from a central portion to a peripheral edge portion; etching a second etching target film formed on the substrate, the second etching target film being same kind as the first etching target film; acquiring a second etching rate that is an etching rate of the second etching target film; calculating a difference between the acquired first etching rate and second etching rate; and calculating the deviation amount of the substrate transport position based on the calculated difference.

A wafer support device includes a support base having a wafer-facing surface, the support base comprising a heater, and an electrostatic chuck supported by the support base, the electrostatic chuck having an attraction surface configured to attract a wafer for wafer processing. During the wafer processing, the wafer-facing surface and the attraction surface are positioned at respective different positions in a direction perpendicular to the wafer-facing surface so that the attraction surface is separated from the wafer-facing surface by a distance.

A substrate processing apparatus capable of improving the uniformity of thin films on a substrate includes: a substrate support unit having a first slope; and a flow control ring arranged to surround the substrate support unit and having a second slope, wherein, during alignment, as the substrate support unit moves in a first direction, the first slope and the second slope contact each other, and due to the contact, the flow control ring slides in a second direction that is different from the first direction.