The present invention relates to a damper control system and a damper control method for controlling an opening degree of an exhaust damper connected to an exhaust duct. The damper control system (300) includes an exhaust damper (310), a first pressure sensor (311), and a controller (315) configured to control an opening degree of the exhaust damper (310). The controller (315) is configured to switch the opening degree of the exhaust damper (310) to an opening degree smaller than a full opening on condition that a shutter (217) is opened.

Provided is a dry etching apparatus including: a plasma process chamber; an edge ring which is arranged in the plasma process chamber and on which a wafer is mounted; a shadow ring positioned to be spaced apart by a first vertical distance above the edge ring during a plasma etching process of the wafer; an operation unit coupled to the shadow ring and having a lift pin that raises and lowers the shadow ring; a fixing portion having a plurality of fixing pins engaged with the lift pin at different positions to fix a lowering point of the shadow ring; and a distance control unit that controls the fixing portion to determine the first vertical distance, wherein the first vertical distance is determined by a first horizontal distance between the wafer and the edge ring.

A planarization apparatus includes a plurality of processors each configured to perform a planarization process on a substrate. Each of the processors includes a substrate chuck, and is configured to perform a planarization process on a substrate chucked by the substrate chuck. A conveyer is configured to convey a substrate chuck of a processor selected from the plurality of processors along a conveyance path including a common conveyance path shared by the plurality of processors. A supplier is arranged on a path of movement of the substrate chuck by the conveyer along the common conveyance path, and is configured to supply a composition to be used in the planarization process onto the substrate chucked by the substrate chuck.

The cleaning apparatus includes multiple kinds of cleaning modules each configured to perform a cleaning processing of a substrate, a first accommodating section configured to accommodate the multiple kinds of cleaning modules therein, and a fluid supply section configured to supply a fluid to the cleaning modules accommodated in the first accommodating section through a pipe. Each of the multiple kinds of cleaning modules includes a pipe connection portion having a common connection position to be connected with the pipe.

A substrate processing apparatus includes: a first module used in a substrate processing process; a second module used in a substrate processing process after the first module; a nozzle provided in the second module and configured to supply a target treatment liquid; a temperature detector that detects a temperature of a treatment liquid inside the nozzle or a temperature of the nozzle; a substrate detection sensor that detects a position of a substrate; and a controller that controls discharge of the target treatment liquid from the nozzle performed before the substrate is conveyed to the second module according to the temperature of the treatment liquid detected by the temperature detector and the position of the substrate.

Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO.sub.2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

Through a combination of a multi-stage adhesive layer structure, a compressed region structure, and a barrier layer, the polishing pad according to the present disclosure can minimize the leakage of liquid components flowing through the interface between the window and the polishing pad and realize excellent long-term durability without leakage even when substantially applied to a polishing process for a long time. In the method for manufacturing a semiconductor device, the specific structure having the window of the polishing pad applied thereto as described above is combined with the optimal process conditions related to the polishing process so that the process efficiency can be further improved, and excellent quality can be secured in terms of polishing rate, polishing flatness, defect prevention, and the like.

A wafer processing system includes a laser processing apparatus, a grinding apparatus, a tape sticking apparatus, a first cassette placement part, a second cassette placement part, a conveying unit that conveys a wafer, and a controller that controls the respective constituent elements. The controller includes a first processing program instructing section that conveys a wafer unloaded from a first cassette in order of the laser processing apparatus, the grinding apparatus, the tape sticking apparatus, and a second cassette and sequentially carries out processing by each apparatus for the one wafer, and a second processing program instructing section that conveys the wafer unloaded from the first cassette in order of the grinding apparatus, the laser processing apparatus, the tape sticking apparatus, and the second cassette and sequentially carries out processing by each apparatus for the one wafer.

A system for performing a chemical mechanical polishing (CMP) process is provided. The system includes a CMP tool configured to polish a semiconductor wafer. The processing system further includes a wafer stage configured to support the semiconductor wafer for facilitating the insertion of the semiconductor wafer into, and its subsequent removal from, the CMP tool. The processing system also includes a number of spray nozzles positioned relative to the wafer stage. In addition, the processing system includes a spray generator connected to the spray nozzles and configured to convert a mixture to a mist spray. The processing system further includes a controller configured to activate flow of the mist spray from the spray generator to the spray nozzles to discharge the mist spray over the semiconductor wafer supported by the wafer stage.

High-performance substrate cleaning apparatus, substrate cleaning method, substrate processing apparatus, and substrate drying apparatus are provided. A substrate cleaning apparatus, including: a substrate holding and rotating mechanism that holds and rotates a substrate; a first cleaning mechanism that brings a cleaning tool into contact with the substrate to clean the substrate, cleans the substrate using two-fluid jet, or cleans the substrate using ozone water; and a second cleaning mechanism that cleans the substrate using an ultrasonic cleaning liquid is provided.