A semiconductor processing tool includes a cleaning chamber configured to perform a post-chemical mechanical polishing/planarization (post-CMP) cleaning operation in an oxygen-free (or in a near oxygen-free) manner. An inert gas may be provided into the cleaning chamber to remove oxygen from the cleaning chamber such that the post-CMP cleaning operation may be performed in an oxygen-free (or in a near oxygen-free) environment. In this way, the post-CMP cleaning operation may be performed in an environment that may reduce oxygen-causing corrosion of metallization layers and/or metallization structures on and/or in the semiconductor wafer, which may increase semiconductor processing yield, may decrease semiconductor processing defects, and/or may increase semiconductor processing quality, among other examples.

A method and apparatus for polishing a substrate is disclosed herein. More specifically, the apparatus relates to an integrated CMP system for polishing substrates. The CMP system has a polishing station configured to polish substrates. A spin rinse dry (SRD) station configured to clean and dry the substrates. A metrology station configured to measure parameters of the substrates. A robot configured to move the substrate in to and out of the SRD station. And an effector rinse and dry (EERD) station configured to clean and dry an end effector of the robot.

According to one embodiment, a substrate treatment method of removing an upper end of a protrusion on a substrate is disclosed. An unevenness is formed on a surface of the substrate. The method can supply a first liquid on the surface of the substrate. The unevenness is formed on the surface. The method can form a protective layer. The protective layer covers the surface of the substrate from the first liquid supplied to the surface of the substrate. The method can supply a second liquid onto the protective layer. In addition the method can physically remove the protective layer which is on the upper end of the protrusion, and can bring the second liquid into contact with the upper end of the protrusion. The protective layer is removed from the upper end of the protrusion.

A substrate treating method may include jetting a fluid containing an abrasive onto a substrate, and polishing the substrate using the jetted fluid.

An embodiment relates to a wafer loading apparatus of wafer polishing equipment. Provided is the wafer loading apparatus of wafer polishing equipment, comprising: a wafer polisher that includes a polishing carrier having a wafer hole formed therein in which a wafer is loaded, wherein both sides of the wafer are polished by top and bottom boards; a wafer transferrer that includes a transfer arm disposed above the polishing carrier to transfer the wafer, wherein a transfer plate corresponding to a shape of the wafer is connected to one end the transfer arm; a wafer position detector mounted on a bottom surface of the transfer plate to detect a position of the wafer hole; a plurality of wafer attachment/detachment units formed on an edge portion of the transfer plate; a wafer aligner mounted on a top surface of the transfer plate to align the wafer; and a controller to which data on the position of the wafer hole, which is detected by the wafer position detector, is transmitted and which calculates a position where the wafer is to be loaded by the wafer attachment/detachment unit and the wafer aligner.

A substrate processing system comprising a polishing part, a pre-cleaning region, and a cleaning part. The polishing part performs a Chemical Mechanical Polishing (CMP) process on a substrate. The pre-cleaning region is prepared in the polishing part and allows pre-cleaning performed on the substrate having undergone the polishing process. The cleaning part cleans the substrate pre-cleaned in the pre-cleaning region.

Provided is a substrate processing system and a substrate processing method. The substrate processing system includes a polishing part for performing a Chemical Mechanical Polishing (CMP) process on a substrate, a cleaning part for cleaning the substrate on which the polishing process is performed, and a substrate transferring part for transferring the substrate to the cleaning part before polishing the substrate in the polishing part. The substrate may be preparatorily cleaned in the cleaning part before the polishing process, and then enters the polishing part.

To stably convey a substrate (workpiece) while suppressing the workpiece from bending. A treatment device is provided. This treatment device includes: a conveying part that conveys a workpiece in a state where a flat surface of the workpiece is inclined around a conveying directional axis relative to a horizontal plane; and a treatment part in which at least one of polishing and cleaning is performed on the flat surface of the workpiece, wherein the conveying part has a drive part configured to be brought into physical contact with an end part of the workpiece and apply force in a conveying direction to the workpiece, a first Bernoulli chuck arranged to face the flat surface of the workpiece, and a second Bernoulli chuck arranged to face an end face of an opposite end part to the end part of the workpiece.

A substrate processing apparatus which reliably prevents a cleaning liquid containing foreign particles from falling from a polishing head onto a substrate is disclosed. The substrate processing apparatus includes a rotating and holding mechanism, a polishing head, and a head cleaning device configured to supply the cleaning liquid to the polishing head to clean the polishing head during polishing and/or after polishing of the substrate.

Disclosed are a CMP wafer cleaning apparatus, and a wafer transfer manipulator and a wafer overturn method for same. The wafer transfer manipulator includes: a transverse transfer shaft, with same only being located at a side of a cleaning unit; a transverse transfer carriage provided on the transverse transfer shaft, and capable of transversely moving along the transverse transfer shaft; a first vertical lifting shaft provided on the transverse transfer carriage, and capable of vertically moving on the transverse transfer carriage; a rotary table provided on the first vertical lifting shaft; and a first claw clamping arm connected to the rotary table, and driven by the rotary table to move in a rotational manner. The CMP wafer cleaning apparatus is provided, and when the CMP wafer cleaning apparatus fails, safe storage of a polished wafer can be realized.