A mechanism that conveys a substrate is cleaned in a cleaning unit. A substrate processing apparatus that includes a substrate polishing device and a substrate cleaning unit is disclosed. The substrate cleaning unit includes a cleaning module and a cleaning unit conveyance mechanism. The cleaning unit conveyance mechanism includes a hand and a hand open/close mechanism. The substrate processing apparatus further includes a hand cleaning unit. The hand cleaning unit includes a hand cleaning tank and a cleaning liquid injection mechanism.

An apparatus for transferring a substrate is disclosed herein. More specifically, the apparatus relates to substrate handling systems used in semiconductor device manufacturing, and more particularly, to substrate handling systems having a substrate handler with enclosed moving elements and increased compatibility with post-CMP cleaning modules. The apparatus includes one or more indexing assemblies. Each of the indexing assemblies including an enclosure, an actuator assembly disposed within the enclosure, and two handling blades disposed outside of the disclosure. Each of the two blades are moveable in either of a translational or a rotating manner.

A polishing device has a substrate stage which holds a substrate Wf, a processing head which processes a surface of the substrate Wf, an indentation detecting system which detects a position of an indentation in the substrate Wf, a movement mechanism which moves the processing head in a radial direction of the substrate stage, and a rotation mechanism which rotates the substrate stage, and the indentation detecting system has a fluid injection nozzle configured to inject a fluid to a circumferential edge portion of the substrate Wf when the substrate Wf is held on the substrate stage, a fluid measuring device which measures a physical quantity which is pressure or a flow rate of the fluid, and a position detector which detects the position of the indentation formed in the circumferential edge portion of the substrate Wf based on a change in physical quantity.

An object is to provide a polishing pad that can reduce generation of scratches, and a method for producing a polished product. A polishing pad including a polyurethane sheet as a polishing layer, wherein the polyurethane sheet exhibits a peak of loss tangent tan δ in the range from 40 to 60° C. in dynamic viscoelasticity measurement performed under conditions of a frequency of 1.6 Hz and a temperature of 20 to 100° C. in a water immersion condition.

To provide an automated apparatus for conveying a rectangular substrate. According to one embodiment, there is provided a substrate conveying apparatus for conveying the rectangular substrate. The substrate conveying apparatus includes a plurality of conveyance rollers, a plurality of roller shafts, a motor, and a pusher. The plurality of conveyance rollers are configured to support a lower surface of the substrate. To the plurality of roller shafts, the plurality of conveyance rollers are mounted. The motor is configured to rotate the plurality of roller shafts. The pusher is for lifting the substrate on the plurality of conveyance rollers such that the substrate is separated away from the plurality of conveyance rollers. The pusher includes a stage configured to pass through a clearance between the plurality of roller shafts.

A substrate cleaning device includes: a pressing member that cleans a substrate by contacting the substrate; a load measurement unit that measures a pressing load of the cleaning member; and a control unit that repeats an operation of comparing the measurement value of the load measurement unit with the setting load, changing the pressing amount of the cleaning member by a first movement amount so that a difference value decreases, when the difference value is larger than a first threshold value and equal to or smaller than a second threshold value, and changing the pressing amount of the cleaning member by a second movement amount larger than the first movement amount so that the difference value decreases, when the difference value is larger than the second threshold value, until the difference value becomes equal to or smaller than the first threshold value.

A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.

A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

A substrate cleaning device includes: a pressing member that cleans a substrate by contacting the substrate; a load measurement unit that measures a pressing load of the cleaning member; and a control unit that repeats an operation of comparing the measurement value of the load measurement unit with the setting load, changing the pressing amount of the cleaning member by a first movement amount so that a difference value decreases, when the difference value is larger than a first threshold value and equal to or smaller than a second threshold value, and changing the pressing amount of the cleaning member by a second movement amount larger than the first movement amount so that the difference value decreases, when the difference value is larger than the second threshold value, until the difference value becomes equal to or smaller than the first threshold value.

A system for polishing a sample is provided. The system may comprise a motor. The system may also include a polishing element that is actuated by the motor. The system may also have a sample holder. The sample holder may hold a sample to be polished by the polishing element. In some examples, the sample holder has multiple degrees of movement in order to precisely polish, grind, or bevel the sample. In some examples, the system may further include an arm having a slurry dispenser, inlets for fluid, and a squeegee-like element to clean, wash, or brush off debris from the polishing element during a polishing process.