An electrolytic plating apparatus includes a plating tank that is filled with plating liquid; a moving mechanism configured to vertically move a processing target substrate in a direction normal to a surface of the plating liquid; a seal member that is disposed at a peripheral edge portion of a processing target surface of a processing target substrate and is configured to seal the plating liquid to a center side of the processing target surface when the processing target substrate is immersed in the plating tank; and a contact member that is separated from the seal member and is electrically connected to the processing target surface.

In-plane uniformity of a membrane electroplated on a polygon substrate is improved. An electroplating device includes an anode holder configured to hold an anode, a substrate holder configured to hold a polygon substrate, and a regulation plate provided between the anode holder and the substrate holder. The regulation plate has a body portion having a first polygon opening following an outer shape of the polygon substrate, and wall portions protruding on a substrate holder side from edges of the first polygon opening. The wall portions protrude over a first distance on the substrate holder side in first regions which contain middle portions of sides of the first polygon opening, and are notched in second regions which contain corner portions of the first polygon opening, or protrude over a second distance smaller than the first distance on the substrate holder side.

A method of manufacturing a semiconductor structure includes loading the substrate from a first load lock chamber into a first processing chamber; disposing a conductive layer over the substrate in the first processing chamber; loading the substrate from the first processing chamber into the first load lock chamber; loading the substrate from the first load lock chamber into an enclosure filled with an inert gas and disposed between the first load lock chamber and a second load lock chamber; loading the substrate from the enclosure into the second load lock chamber; loading the substrate from the second load lock chamber into a second processing chamber; disposing a conductive member over the conductive layer in the second processing chamber; loading the substrate from the second processing chamber into the second load lock chamber; and loading the substrate from the second load lock chamber into a second load port.

A plating method for plating a substrate having resist opening portions is provided. The plating method includes a resist residue removing step of removing resist residues in the resist opening portions of the substrate by spraying first process liquid to a surface of the substrate on which the resist opening portions are formed, a liquid filling step of soaking the substrate passed through the removing step in second process liquid to fill the resist opening portions of the substrate with the second process liquid, and a plating step of plating the substrate passed through the liquid filling step.

According to an embodiment, a substrate holder holds a rectangular substrate and performs electrolytic plating on the substrate. The substrate holder includes a first holding member and a second holding member clamping the substrate between the first holding member and it and having a contact which contacts a peripheral part of the substrate and supplies an electric current to the substrate. The second holding member includes an opening defining a region where an electric field is formed and, at a position farther from the substrate than the opening, a shielding part protruding closer to an inner side than the opening and shielding the peripheral part of a surface of the substrate. The shielding part has a frame shape having a predetermined shielding width in the peripheral part of the substrate, and has, at a corner part thereof, a discontinuous part having a smaller shielding width than surroundings.

Cleaning substrates or electroplating system components may include methods of rinsing a substrate at a semiconductor plating chamber. The methods may include moving a head from a plating bath to a first position. The head may include a substrate coupled with the head. The methods may include rotating the head for a first period of time to sling bath fluid back into the plating bath. A residual amount of bath fluid may remain. The methods may include delivering a first fluid to the substrate from a first fluid nozzle to at least partially expel the residual amount of bath fluid back into the plating bath. The methods may include moving the head to a second position. The methods may include rotating the head for a second period of time. The methods may also include delivering a second fluid across the substrate from a second fluid nozzle.

A substrate processing system comprises: a plating device including a first conveying unit for conveying a first substrate and configured to convey the first substrate by the first conveying unit after a plating process is applied to a surface of the first substrate in a stationary state; and a pre-stage device including a second conveying unit for conveying a second substrate and configured to convey the second substrate as the first substrate to the plating device by the second conveying unit in response to unloading of the first substrate by the first conveying unit. In the system, a timing at which the second conveying unit conveys the second substrate to the plating device being controlled according to a plating process time.

A calculation amount and calculation time for a substrate conveyance schedule are reduced. A scheduler is provided which is incorporated in a control section of a substrate processing apparatus including a plurality of substrate processing sections that process a substrate, a conveyance section that conveys the substrate, and the control section that controls the conveyance section and the substrate processing sections, and calculates a substrate conveyance schedule. The scheduler includes: a modeling section that models processing conditions, processing time and constraints of the substrate processing apparatus into nodes and edges using a graph network theory, prepares a graph network, and calculates a longest route length to each node; and a calculation section that calculates the substrate conveyance schedule based on the longest route length.

The present invention improves the hydrophilicity of a substrate surface, and suppresses variation in the degree of hydrophilicity with each substrate. A plating apparatus is provided that performs a plating process on a substrate having a resist pattern. This plating apparatus includes a pretreatment bath that performs hydrophilic treatment by bringing a pretreatment liquid into contact with a surface to be plated of the substrate, and a plating bath that performs a plating process on a substrate that has undergone the hydrophilic treatment. The pretreatment bath includes a pretreatment liquid supplying device that supplies the pretreatment liquid into the pretreatment bath, and an ultraviolet light irradiation device that irradiates ultraviolet light onto the surface to be plated of the substrate.

A plating method for plating a substrate having resist opening portions is provided. The plating method includes a resist residue removing step of removing resist residues in the resist opening portions of the substrate by spraying first process liquid to a surface of the substrate on which the resist opening portions are formed, a liquid filling step of soaking the substrate passed through the removing step in second process liquid to fill the resist opening portions of the substrate with the second process liquid, and a plating step of plating the substrate passed through the liquid filling step.