A method of forming a semiconductor structure includes following steps. A semiconductor material structure is formed over a substrate. A first pad layer is formed over the semiconductor material structure. The first pad layer and the semiconductor material structure are etched to form a trench. An oxidation process is performed on a sidewall of the semiconductor material structure to form a first oxide structure on the sidewall of the semiconductor material structure. A second oxide structure is formed in the trench.

A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first isolation structure which has a first corner. The semiconductor device also includes a first well region with a first conductive type. The semiconductor device includes further includes a gate structure over the first well region and covers a portion of the first corner of the first isolation structure. In addition, the semiconductor device includes a first doped region and a second doped region disposed on two opposites of the gate structure. Each of the first doped region and the second doped region has the first conductive type. The semiconductor device also includes a first counter-doped region in the first well region with a second conductive type different from the first conductive type. The first counter-doped region covers the first corner of the first isolation structure.

Provided is a semiconductor device including a substrate having a lower portion and an upper portion on the lower portion; an isolation region disposed on the lower portion of the substrate and surrounding the upper portion of the substrate in a closed path; a gate structure disposed on and across the upper portion of the substrate; source and/or drain (S/D) regions disposed in the upper portion of the substrate at opposite sides of the gate structure; and a channel region disposed below the gate structure and abutting between the S/D regions, wherein the channel region and the S/D regions have different conductivity types, and the channel region and the substrate have the same conductivity type.

A method of manufacturing a trench type semiconductor device includes the following steps. First, an epitaxial layer is formed on a substrate, then a trench is formed in the epitaxial layer, and a gate structure is formed in the trench. The gate structure includes an upper gate and a lower gate, and an intermediate insulating portion, and the intermediate insulating portion is located in the upper gate.

The present invention discloses a formation method, comprising: forming a hard mask layer and a photo-lithographic pattern of a fin structure on a the semiconductor substrate; patterning the hard mask layer and the semiconductor substrate to gain the fin structure with a profile of steep sidewalls; forming a protective layer on the sidewall surface of the fin structure; etching the semiconductor substrate located below the fin structure to form isolation structure trenches; performing a modified treatment on the exposed surfaces of the isolation structure trenches to form a modified layer with a certain thickness; removing the protective layer and the modified layer simultaneously; filling a dielectric layer in the isolation structure trenches till to cover the fin structure and then planarizing the dielectric layer; performing a trench etching to the dielectric layer and forming the fin structure and an isolation structure with sloped sidewalls. The present invention adjusts physical profiles of the sidewalls of both the fin structure and the isolation structure independently, improves process accuracy, uniformity and stability, so as to improve electrical performance and device reliability of FET devices.

The present application provides a flash memory device. The flash memory device includes a semiconductor substrate; and a plurality of tunnel oxide layers formed on a surface of the semiconductor substrate. The flash memory device also includes a floating gate having a first portion with a width smaller than a width of the tunnel oxide layer and a second portion with a width greater than the width of the first portion formed on the first portion formed on each of the floating silicon oxide layers. Further, the flash memory device includes a plurality of shallow trench isolation structures formed in the surface of the semiconductor substrate between adjacent floating gates and the tunnel oxide layers; and liner oxide layers formed on side surfaces of the first portion of the floating gates.

A method for manufacturing logic device isolation in an embedded storage process, removing the pad silicon nitride and floating gate polysilicon layer in a shallow trench isolation area and retaining the floating gate oxide layer; depositing acid etching silicon nitride; removing the acid etching silicon nitride at the bottom of the shallow trench isolation and a portion of the silicon substrate adjacent to and under the shallow trench isolation, to form a trench and retain the acid etching silicon nitride on a side of the floating gate polysilicon layer close to the shallow trench isolation; remove the acid etching silicon nitride on the side of the floating gate polysilicon layer close to the shallow trench isolation.

The invention relates to an isolation structure of a semiconductor device and a method of forming. An exemplary isolation structure for a semiconductor device comprises a substrate comprising a trench; a strained material in the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an oxide layer of the strained material over the strained material; a high-k dielectric layer over the oxide layer; and a dielectric layer over the high-k dielectric layer filling the trench.

Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate having an upper surface. The semiconductor device also includes a recess extending from the upper surface into the semiconductor substrate. The semiconductor device further includes an isolation structure in the recess, and the isolation structure has an upper portion and a lower portion.

A method of forming a semiconductor structure includes following steps. A semiconductor material structure is formed over a substrate. A first pad layer is formed over the semiconductor material structure. The first pad layer and the semiconductor material structure are etched to form a trench. An oxidation process is performed on a sidewall of the semiconductor material structure to form a first oxide structure on the sidewall of the semiconductor material structure. A second oxide structure is formed in the trench.