Active protection circuits for semiconductor devices, and associated systems and methods, are disclosed herein. The active protection circuits may protect various components of the semiconductor devices from process induced damage—e.g., stemming from process charging effects. In some embodiments, the active protection circuit includes an FET and a resistor coupled to certain nodes (e.g., source plates for 3D NAND memory arrays) of the semiconductor devices, which may be prone to accumulate the process charging effects. The active protection circuits prevent the nodes from reaching a predetermined voltage during process steps utilizing charged particles. Subsequently, metal jumpers may be added to the active protection circuits to deactivate the FETs for normal operations of the semiconductor devices. Further, the FET and the resistor of the active protection circuit may be integrated with an existing component of the semiconductor device.

An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes (308-316) has a first terminal coupled to the base and a second terminal coupled to the collector. The collector is connected to a first terminal (V+). The emitter is connected to a first power supply terminal (V−).

A semiconductor device includes: a semiconductor region having charge carriers of a first conductivity type; a transistor cell in the semiconductor region; a semiconductor channel region in the transistor cell and having a first doping concentration of charge carriers of a second conductivity type, wherein a transition between the semiconductor channel region and the semiconductor region forms a first pn-junction; a semiconductor auxiliary region in the semiconductor region and having a second doping concentration of charge carriers of the second conductivity type. A transition between the semiconductor auxiliary region and semiconductor region forms a second pn-junction positioned deeper in the semiconductor region as compared to the first pn-junction. The semiconductor auxiliary region is positioned closest to the semiconductor channel region as compared to any other semiconductor region having charge carriers of the second conductivity type and that forms a further pn-junction with the semiconductor region.

A semiconductor device is provided that includes at least three regions. Each region includes a first-type layer doped with a first type of charge carriers and a second-type layer doped with a second type of charge carriers, and the first-type layer and the second-type layer are positioned laterally along each region. The first-type layer and the second-type layer have opposite polarity, and the first-type layer of a region is positioned substantially across the second-type layer of a neighboring region, and the second-type layer of a region is positioned substantially across the first-type layer of a neighboring region and each region includes a second-type well doped with the second type of charge carriers, and the second-type well is positioned around at least the first-type layer.

An ESD protection device includes a semiconductor body having an upper surface, a plurality of p-type wells that each extend from the upper surface into the semiconductor body, a plurality of n-type wells that each extend from the upper surface into the semiconductor body, first isolation regions comprising an electrical insulator that laterally surrounds the p-type wells and extends from the upper surface into the semiconductor body at least as deep as the p-type wells, and second isolation regions comprising an electrical insulator that laterally surrounds the n-type wells and extends from the upper surface into the semiconductor body at least as deep as the n-type wells, wherein the p-type wells and the n-type wells alternate with one another a first direction, and wherein an isolating area of the first isolation regions is greater than an isolating area of the second isolation regions.

An apparatus includes a protection circuit electrically connected to first and second voltage domains. The protection circuit includes a first silicon-controlled rectifier (SCR) and a second SCR connected in anti-parallel configuration. The first SCR is configured to connect the first voltage domain and the second voltage domain based on detection of a first triggering condition. The second SCR is configured to connect the second voltage domain and the first voltage domain based on detection of a second triggering condition. The protection circuit is configured to isolate the first and second voltage domains without the triggering conditions.

An integrated circuit device for protecting circuits from transient electrical events is disclosed. An integrated circuit device includes a semiconductor substrate having formed therein a bidirectional semiconductor rectifier (SCR) having a cathode/anode electrically connected to a first terminal and an anode/cathode electrically connected to a second terminal. The integrated circuit device additionally includes a plurality of metallization levels formed above the semiconductor substrate. The integrated circuit device further includes a triggering device formed in the semiconductor substrate on a first side and adjacent to the bidirectional SCR. The triggering device includes one or more of a bipolar junction transistor (BJT) or an avalanche PN diode, where a first device terminal of the triggering device is commonly connected to the T1 with the K/A, and where a second device terminal of the triggering device is electrically connected to a central region of the bidirectional SCR through one or more of the metallization levels.

A silicon controlled rectifier including a semiconductor substrate, first and second semiconductor wells, first and second semiconductor regions, third and fourth semiconductor regions and a silicide layer is provided. The first and the second semiconductor wells are formed in the semiconductor substrate. The first and the second semiconductor regions are respectively formed in the first and the second semiconductor wells in spaced apart relation. The third and the fourth semiconductor regions are respectively formed in the first and the second semiconductor wells. The silicide layer is formed on the third and the fourth semiconductor regions. The silicon controlled rectifier is at least suitable for high frequency circuit application. The silicon controlled rectifier has a relatively low trigger voltage, a relatively high electrostatic discharge level, and a relatively low capacitance.

A layout structure of an ESD protection semiconductor device includes a substrate, a first doped region, a pair of second doped regions, a pair of third doped regions, at least a first gate structure formed within the first doped region, and a drain region and a first source region formed at two sides of the first gate structure. The substrate, the first doped region and the third doped regions include a first conductivity type. The second doped regions, the drain region and the first source region include a second conductivity type complementary to the first conductivity type. The first doped region includes a pair of lateral portions and a pair of vertical portions. The pair of second doped regions is formed under the pair of lateral portions, and the pair of third doped regions is formed under the pair of vertical portions.

In an ESD protection device, a first well of a first conductivity type and a second well of a second conductivity type are formed in a substrate to contact each other. A first impurity region of the first conductivity type and a second impurity region of the second conductivity type are formed in the first well, and are electrically connected to a first electrode pad. The second impurity region is spaced apart from the first impurity region in a direction of the second well. A third impurity region is formed in the second well, has the second conductivity type, and is electrically connected to a second electrode pad. A fourth impurity region is formed in the second well, is located in a direction of the first well from the third impurity region to contact the third impurity region, has the first conductivity type, and is electrically floated.