The present disclosure relates to a solid state image sensor and electronic equipment that enable degradation in image quality of a captured image to be suppressed even if any pixel in a pixel array is configured as a functional pixel for obtaining desired information in order to obtain information different from a normal image. In a plurality of pixels constituting subblocks provided in an RGB Bayer array constituting a block which is a set of color units, normal pixels that capture a normal image are arranged longitudinally and laterally symmetrically within the subblock, and functional pixels for obtaining desired information other than capturing an image are arranged at the remaining positions. The present disclosure can be applied to a solid state image sensor.

There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion.

A decrease in sensitivity of distance measurement is reduced. A light receiving element includes a first voltage application unit and a second voltage application unit, a first charge detection unit, and a second charge detection unit. The first voltage application unit and the second voltage application unit are configured in linear shapes extending in the same direction on the surface of the semiconductor substrate that performs photoelectric conversion of the incident light, are arranged apart from each other, and are provided with proximity portions and applied with different voltages. The first charge detection unit is arranged around the first voltage application unit on the surface of the semiconductor substrate and detects a charge generated by photoelectric conversion. The second charge detection unit is arranged around the second voltage application unit on the surface of the semiconductor substrate and detects a charge generated by photoelectric conversion.

It is possible to curb noise, color mixing, and the like. An imaging apparatus includes: a semiconductor; a photoelectric conversion unit that is provided on the semiconductor substrate and generates electrical charge in accordance with the amount of received light through photoelectric conversion; an electrical charge holding unit that is disposed on a side closer to a first surface of the semiconductor substrate than the photoelectric conversion unit and holds the electrical charge transferred from the photoelectric conversion unit; an electrical charge transfer unit that transfers the electrical charge from the photoelectric conversion unit to the electrical charge holding unit; a vertical electrode that transmits the electrical charge generated by the photoelectric conversion unit to the electrical charge transfer unit and is disposed in a depth direction of the semiconductor substrate, and a first light control unit that is disposed on a side closer to a second surface that is a side opposite to the first surface of the semiconductor substrate than the vertical electrode, is disposed at a position overlapping the vertical electrode in a plan view of the semiconductor substrate from a normal line direction of the first surface, and has a T-shaped section in the depth direction of the substrate. The first light control member includes a first light control portion and a second light control portion extending in mutually intersecting directions in an integrated structure.

Provided is a radiation image detector, including: a substrate; an optical image detector located on the substrate; and a radiation conversion layer located above the optical image detector to convert radiation into visible light. The optical image detector includes a photosensitive pixel array formed by a plurality of photosensitive pixels arranged periodically; each photosensitive pixel includes a photoelectric conversion layer which is capable of converting the visible light into electric charges. The photoelectric conversion layer includes an active region and an inactive region. The active region occupies less than 70% of the area of the photoelectric conversion layer. Each photosensitive pixel further includes a light-guide layer located between the radiation conversion layer and the photoelectric conversion layer and configured to guide the visible light to the active region.

An image sensing device includes a first impurity region, a second impurity region, a floating diffusion region, and a transfer gate. The first impurity region is disposed in a semiconductor substrate and includes impurities with a first doping polarity, and the first impurity region generates photocharges by performing photoelectric conversion in response to incident light. The second impurity region is disposed over the first impurity region and has impurities with a second doping polarity different from the first doping polarity, and the second impurity region contacts with on some portions of the first impurity region. The floating diffusion region disposed over the second impurity region. The transfer gate couples to the floating diffusion region and transmits photocharges generated by the first impurity region to the floating diffusion region. The first impurity region is arranged not in contact with the transfer gate.

Optimizations are provided for a high dynamic range (HDR) sensor. This sensor is a spatially multiplexed image sensor that includes at least two sets of red, green, and blue (RGB) pixels. Each red pixel in the second set of RGB pixels is positioned proximately and sometimes, adjacently, to at least one red pixel in the first set of RGB pixels. Each green pixel in the second set of RGB pixels is positioned proximately to at least one green pixel in the first set of RGB pixels. Each blue pixel in the second set of RGB pixels is positioned proximately to at least one blue pixel in the first set of RGB pixel. This spatially multiplexed image sensor is able to generate a digital image with reduced motion blurring artifacts.

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a photodetector arranged within a substrate. The substrate has surfaces defining one or more protrusions arranged along a first side of the substrate over the photodetector. One or more isolation structures are arranged within one or more trenches defined by sidewalls of the substrate arranged on opposing sides of the photodetector. The one or more trenches extend from the first side of the substrate to within the substrate. The one or more isolation structures respectively include a reflective medium configured to reflect electromagnetic radiation.

An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.

An imaging element has at least a photoelectric conversion section, a first transistor TR.sub.1, and a second transistor TR.sub.2, the photoelectric conversion section includes a photoelectric conversion layer 13, a first electrode 11, and a second electrode 12, the imaging element further has a first photoelectric conversion layer extension section 13A, a third electrode 51, and a fourth electrode 51C, the first transistor TR.sub.1 includes the second electrode 12 that functions as one source/drain section, the third electrode that functions as a gate section 51, and the first photoelectric conversion layer extension section 13A that functions as the other source/drain section, and the first transistor TR.sub.1 (TR.sub.rst) is provided adjacent to the photoelectric conversion section.