An example imaging sensor comprises a bulk silicon substrate and a pixel array. The pixel array comprises an active pixel region including an active pixel subarray, an optical black pixel region including an optical black pixel subarray, and an optical black dummy pixel region including an optical black dummy pixel subarray, the optical black dummy pixel region positioned between the active pixel region and the optical black pixel region. A near-infrared absorber is positioned between the active pixel region and the optical black pixel region, the near-infrared absorber comprising a material having a higher near-infrared absorption coefficient than that of silicon.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

An image sensor for distance measurement and an image sensor module including the image sensor are provided. The image sensor includes: a pixel array including a plurality of pixels including a plurality of first pixels arranged on a first line and a plurality of second pixels arranged on a second line, wherein the plurality of first pixels and the plurality of second pixels are arranged to be staggered from each other, and each of the plurality of first pixels and the plurality of second pixels includes a plurality of modulation gates for receiving a plurality of modulated signals during a photocharge collection period; a row decoder that provides control signals and the plurality of modulated signals to the pixel array; and an analog-to-digital conversion circuit that receives a plurality of sensing signals from the pixel array and converts the plurality of sensing signals into a plurality of digital signals.

An integrated sensor includes a substrate made of a first semiconductor material having a first optical refractive index. The substrate includes a pixel array, wherein each pixel has a photosensitive active zone formed by an index contrast zone including a matrix of the first semiconductor material and a periodic structure embedded in the matrix. The periodic structure extends from the backside of the substrate and has a two-dimensional periodicity in a parallel plane with the backside. A value of the periodicity is linked with the wavelength of the optical signal and with the first refractive index. Elements of the periodic structure are formed of a second optically transparent material having a second refractive index less than the first refractive index. These elements are positioned at locations defined by the periodicity except for at one location defining a region, preferably central, that is devoid of a corresponding one of the elements.

The present disclosure relates to an image sensor including a pixel along a substrate. The pixel includes a first semiconductor region having a first doping type. A second semiconductor region is directly over the first semiconductor region. The second semiconductor region has a second doping type opposite the first doping type and meets the first semiconductor region at a p-n junction. A ring-shaped third semiconductor region laterally surrounds the first and second semiconductor regions. The ring-shaped third semiconductor region has the first doping type. A ring-shaped fourth semiconductor region laterally surrounds the ring-shaped third semiconductor region. The ring-shaped fourth semiconductor region has the second doping type. A ring-shaped fifth semiconductor region is directly over the ring-shaped third semiconductor region and has the second doping type.

The disclosure relates to a demodulator including a pinned photodiode, at least one storage node, at least one transfer gate connected between the storage node and the pinned photodiode. The pinned photodiode includes a p-doped epitaxial semiconductor layer, a n-doped semiconductor region formed within the epitaxial semiconductor layer and creating therewith a lower junction and at least one lateral junction substantially perpendicular to the lower junction, a p+ pinning layer formed on top of said semiconductor region. The demodulator further includes a generating unit configured to generate minority and majority carriers at said lateral junction and to form a lateral photodiode.

An image-sensing device is provided. The image-sensing device includes a substrate, a light-sensing element, a first dielectric layer, a light-guiding structure, and a patterned conductive layer. The light-sensing element is disposed in the substrate. The first dielectric layer is disposed on the first side of the substrate. The light-guiding structure is disposed in the first dielectric layer. The patterned conductive layer is disposed between the light-sensing element and the light-guiding structure. In addition, the patterned conductive layer includes a subwavelength structure. An image-sensing system including the above image-sensing device is also provided.

The present invention provides a photosensitive element, and a preparation method and a display device thereof. The photosensitive element includes a substrate; a first electrode arranged on the substrate; an N-type doped silicon layer arranged on the first electrode; an undoped silicon layer arranged on the N-type doped silicon layer; a molybdenum oxide layer arranged on the undoped silicon layer; an insulating layer arranged on the molybdenum oxide layer and the substrate, wherein a first opening is arranged on the insulating layer to expose the molybdenum oxide layer; and a second electrode arranged on the insulating layer and the molybdenum oxide layer, wherein the second electrode contacts the molybdenum oxide layer through the first opening.

Disclosed herein is a ranging module including a light receiving element, a light emitting unit, and a light-emission control unit. The light receiving element has plural transfer gates which distribute and transfer, to plural floating diffusions, signal charge accumulated in a photodiode that photoelectrically converts incident light, and at least two of the plural transfer gates are disposed point-symmetrically with respect to an optical center as seen from a direction of incidence of the light. The light emitting unit emits irradiation light having a periodically varying brightness. The light-emission control unit controls irradiation timing of the irradiation light.

An image sensing device is provided to include: a substrate including photoelectric conversion elements, each configured to generate photocharge corresponding to the intensity of incident light; a plurality of optical filters disposed over the substrate and configured to selectively transmit the incident light to the plurality of photoelectric conversion elements; and an optical grid structure disposed between the optical filters adjacent to each other. The optical grid structure comprises a capping layer disposed along a boundary of the optical grid structure and structured to define a space with an open area to expose the space to an outside of the optical grid structure so that the space is filled with air as an air layer, wherein a first width of a top side of the air layer is smaller than a second width of a bottom side thereof.