An image sensing device comprises a semiconductor substrate including pixel regions that correspond to pixels, respectively, each pixel region including a photoelectric conversion region for a corresponding pixel that generates photocharges through conversion of incident light, and a plurality of first color filters disposed over a first surface of the semiconductor substrate and located over the pixel regions of the semiconductor substrate to transmit incident light of a first color to the pixel regions. The pixel regions corresponding to the first color filters have different substrate thicknesses from one another.

According to one embodiment, a solid-state imaging unit includes a plurality of pixels arranged along a first direction. The pixels each include a photoelectric conversion unit and a filter on the photoelectric conversion unit. The filer has a planar shape corresponding to a planar shape of the photoelectric conversion unit. The filter has a width in the first direction is different from a width of the filter in a second direction orthogonal to the first direction.

A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

A light-receiving device includes at least one pixel. The at least one pixel includes a first electrode; a second electrode; and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer is configured to convert incident infrared light into electric charge. The photoelectric conversion layer has a first section and a second section. The first section is closer to the first electrode than the second section, and the second section is closer to the second electrode than the first section. At least one of the first section and the second section have a plurality of surfaces.

The present disclosure relates to a solid state image sensor and electronic equipment that enable degradation in image quality of a captured image to be suppressed even if any pixel in a pixel array is configured as a functional pixel for obtaining desired information in order to obtain information different from a normal image. In a plurality of pixels constituting subblocks provided in an RGB Bayer array constituting a block which is a set of color units, normal pixels that capture a normal image are arranged longitudinally and laterally symmetrically within the subblock, and functional pixels for obtaining desired information other than capturing an image are arranged at the remaining positions. The present disclosure can be applied to a solid state image sensor.

An imaging device including: a semiconductor substrate including a pixel region and a peripheral region; an insulating layer that covers the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry configured to be electrically connected to the first electrodes; peripheral circuitry configured to be electrically connected to the detection circuitry, and including analog circuitry; and a third electrode electrically connected to the second electrode. The third electrode overlaps the analog circuitry in a plan view, and in all cross-sections perpendicular to a surface of the semiconductor substrate, parallel to the column direction or the row direction, intersecting at least one of the first electrodes, and intersecting the third electrode, no transistor of the digital circuitry is located directly below the third electrode.

Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed within a substrate. The substrate has a front-side surface and a back-side surface. An absorption enhancement structure is disposed along the back-side surface of the substrate and overlies the photodetector. The absorption enhancement structure includes a plurality of protrusions that extend outwardly from the back-side surface of the substrate. Each protrusion comprises opposing curved sidewalls.

An imaging device includes: a first electrode; a charge storage electrode disposed at a distance from the first electrode; a photoelectric conversion layer in contact with the first electrode and above the charge storage electrode, with an insulating layer between the charge storage electrode and the photoelectric conversion layer; and a second electrode on the photoelectric conversion layer. The portion of the insulating layer between the charge storage electrode and the photoelectric conversion layer includes a first region and a second region, the first region is formed with a first insulating layer, the second region is formed with a second insulating layer, and the absolute value of the fixed charge of the material forming the second insulating layer is smaller than the absolute value of the fixed charge of the material forming the first insulating layer.

A photosensor includes: APD regions and a dividing region located between adjacent APD regions. The first semiconductor substrate includes a first primary surface and a second primary surface. An APD in each APD region includes: a first semiconductor layer of a first conductivity type that is in contact with the first primary surface; and a second semiconductor layer of a second conductivity type opposite to the first conductivity type which is closer to the second primary surface than the first semiconductor layer is. The dividing region includes: a third semiconductor layer and a trench closer to the second primary surface than the third semiconductor layer is. The trench includes a first end in contact with the second primary surface and a second end apart from the first primary surface. A part of the trench between the second end and the first primary surface is at least partially depleted.

An image sensor may include; a semiconductor substrate including a first surface and a second surface, and further including a photoelectric conversion region, a buried gate structure disposed in a buried gate trench extending into the semiconductor substrate from the first surface of the semiconductor substrate, a floating diffusion region including a first type impurity and disposed on one side of the buried gate structure in the semiconductor substrate, a contact disposed on the first surface of the semiconductor substrate above the floating diffusion region, and a contact barrier region including a second type impurity and disposed between the contact and the floating diffusion region in the semiconductor substrate.