There is provided an imaging element includes a photoelectric conversion unit that includes a first electrode, a photoelectric conversion layer, and a second electrode, in which the photoelectric conversion unit further includes a charge storage electrode that has an opposite region opposite to the first electrode via an insulating layer, and a transfer control electrode that is opposite to the first electrode and the charge storage electrode via the insulating layer, and the photoelectric conversion layer is disposed above at least the charge storage electrode via the insulating layer.

A solid-state imaging element and an electronic device are provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.

An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.

According to the present disclosure, an imaging element may include: a substrate or a well; a pinned photodiode disposed on the substrate; a floating diffusion region disposed on the substrate or the well; a first transfer gate transistor disposed between the pinned photodiode and the floating diffusion region a photodiode signal charge generated by the pinned photodiode to the floating diffusion region; one or more gate-controlled storages disposed on the substrate and storing a signal charge generated by the pinned photodiode as a storage signal charge; a storage-controlling gate electrode disposed adjacent to the gate-controlled storage; an overflow path disposed between the pinned photodiode and the gate-controlled storage and transferring the storage signal charge from the pinned photodiode to the gate-controlled storage; and a detecting node connected to the floating diffusion region, wherein the photodiode signal charge and the storage signal charge can be read at the detecting node.

It is possible to curb noise, color mixing, and the like. An imaging apparatus includes: a semiconductor; a photoelectric conversion unit that is provided on the semiconductor substrate and generates electrical charge in accordance with the amount of received light through photoelectric conversion; an electrical charge holding unit that is disposed on a side closer to a first surface of the semiconductor substrate than the photoelectric conversion unit and holds the electrical charge transferred from the photoelectric conversion unit; an electrical charge transfer unit that transfers the electrical charge from the photoelectric conversion unit to the electrical charge holding unit; a vertical electrode that transmits the electrical charge generated by the photoelectric conversion unit to the electrical charge transfer unit and is disposed in a depth direction of the semiconductor substrate, and a first light control unit that is disposed on a side closer to a second surface that is a side opposite to the first surface of the semiconductor substrate than the vertical electrode, is disposed at a position overlapping the vertical electrode in a plan view of the semiconductor substrate from a normal line direction of the first surface, and has a T-shaped section in the depth direction of the substrate. The first light control member includes a first light control portion and a second light control portion extending in mutually intersecting directions in an integrated structure.

Provided is a solid-state image sensor and an electronic device capable of suppressing the occurrence of a strong electrical field near a transistor while being compact. The solid-state image sensor includes a photoelectric conversion element that performs photoelectric conversion, an element isolation that penetrates from a first main surface to a second main surface of a substrate and that is formed between pixels including the photoelectric conversion element, and a conductive part provided in close contact with a first main surface side of the element isolation.

The dynamic range of a solid-state imaging element including a comparator is expanded.

The solid-state imaging element includes a pixel circuit and a comparison transistor. In the solid-state imaging element, the pixel circuit generates a pixel signal and outputs the pixel signal to a vertical signal line. Further, the comparison transistor has a source connected to a constant current source configured to supply a constant current to the vertical signal line. The comparison transistor has a gate to which a predetermined reference signal is input. Further, the comparison transistor has a drain from which a comparison result between the pixel signal and the reference signal is output.

There is provided a solid-state imaging device that includes a photoelectric conversion unit, a transfer gate, a floating diffusion unit, and a transistor. The photoelectric conversion unit produces a charge according to incident light. The transfer gate has a columnar shape having an opening that is continuous in a vertical direction, and transfers the charge from the photoelectric conversion unit. The floating diffusion unit is formed extending to a region surrounded by the opening of the transfer gate, and converts the transferred charge into a voltage signal. The transistor is electrically connected to the floating diffusion unit via a diffusion layer.

A sensing device includes a light-transmissible substrate, a light-transmissible electrode unit connected thereto, including multiple electrically independent electrode lines, and a light sensing unit connected to the light-transmissible substrate and the light-transmissible electrode unit. The light sensing unit includes a plurality of light sensors for sensing a light transmitted from the light-transmissible substrate. The light sensors are confined within the light-transmissible electrode unit and are electrically connectable to an outer component through the light-transmissible electrode unit.

Provided are a solid-state imaging device capable of improving image quality of a captured image even if the pixel size is increased, and an electronic device equipped with the solid-state imaging device. A solid-state imaging device is provided that includes: at least two column areas that perform Analog To Digital (AD) conversion of a pixel signal generated by a pixel; a plurality of vertical signal lines that transfers the pixel signal to the column areas; and a free area in which the plurality of vertical signal lines is not wired, in which two of the vertical signal lines facing each other sandwiching the free area are arranged, and lengths of the two vertical signal lines are substantially equal to each other.