An imaging device which has a stacked-layer structure and can be manufactured easily is provided. The imaging device includes a signal processing circuit, a memory device, and an image sensor. The imaging device has a stacked-layer structure in which the memory device is provided above the signal processing circuit, and the image sensor is provided above the memory device. The signal processing circuit includes a transistor formed on a first semiconductor substrate, the memory device includes a transistor including a metal oxide in a channel formation region, and the image sensor includes a transistor formed on a second semiconductor substrate.

Aspects of the present disclosure relate to depth sensing using a device. An example device includes a light projector configured to project light in a first and a second distribution. The first and the second distribution include a flood projection when the device operates in a first mode and a pattern projection when the device operates in a second mode, respectively. The example device includes a receiver configured to detect reflections of light projected by the light projector. The example device includes a processor connected to a memory storing instructions. The processor is configured to determine first depth information based on reflections detected by the receiver when the device operates in the first mode, determine second depth information based on reflections detected by the receiver when the device operates in the second mode, and resolve multipath interference (MPI) using the first depth information and the second depth information.

An image sensor for electronic cameras has a plurality of pixels for generating exposure-dependent signals, wherein a respective pixel at least comprises: a light-sensitive element to generate electrical charge from incident light; a readout node; a transfer gate to selectively couple the light-sensitive element to the readout node; a converter transistor to convert the charge present at the readout node into a voltage signal at a signal output; and a selection switch that is connected to the signal output of the converter transistor to selectively couple the signal output of the converter transistor to an associated readout line of the image sensor. The respective pixel has an electrically conductive shielding structure that at least partly surrounds the readout node and that is set or can be set to an electrical potential that depends on the voltage signal of the converter transistor.

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a GMR filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. The present technology can be applied to, for example, an image sensor provided with a GMR filter, such as a back-side-illuminated or front-side-illuminated CMOS image sensor.

An imaging system according to the present disclosure includes: an imaging device that is mounted in a vehicle, and captures and generates an image of a peripheral region of the vehicle; and a processing device that is mounted in the vehicle, and executes processing related to a function of controlling the vehicle on the basis of the image. The imaging device includes: a first control line, a first voltage generator that applies a first voltage to the first control line, a first signal line, a plurality of pixels that applies a pixel voltage to the first signal line, a first dummy pixel that applies a voltage corresponding to the first voltage of the first control line to the first signal line in a first period, a converter including a first converter that performs AD conversion on the basis of a voltage of the first signal line in the first period to generate a first digital code, and a diagnosis section that performs diagnosis processing on the basis of the first digital code. The above-described processing device restricts the function of controlling the vehicle on the basis of a result of the diagnosis processing.

A method of fabricating a target shallow trench isolation (STI) structure between devices in a wafer-level image sensor having a large number of pixels includes etching a trench, the trench having a greater depth and width than a target STI structure and epitaxially growing the substrate material in the trench for a length of time necessary to provide the target depth and width of the isolation structure. An STI structure formed in a semiconductor substrate includes a trench etched in the substrate having a depth and width greater than that of the STI structure, and semiconductor material epitaxially grown in the trench to provide a critical dimension and target depth of the STI structure. An image sensor includes a semiconductor substrate, a photodiode region, a pixel transistor region and an STI structure between the photodiode region and the pixel transistor region.

[Problem] There is provided a solid-state image pickup device and an electronic apparatus, which are capable of using a substrate other than a {100} substrate while suppressing the problem of substrates other than the {100} substrate.

[Means of Solution] The solid-state image pickup device in the present disclosure includes a first substrate that is a substrate other than a {100} substrate; a photoelectric conversion unit that is provided in the first substrate; a lens that is provided above the first substrate; one or more substrates that are provided below the first substrate and have a crystal plane different from a crystal plane of the first substrate; and a transistor that is provided on an upper surface or a lower surface of one of the one or more substrates and is included in a source follower circuit.

An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.

In a solid state imaging element in which whether or not an address event has occurred is detected, the circuit area in each pixel is reduced.

A driving circuit supplies a prescribed reference signal the level of which gradually fluctuates with lapse of time. A plurality of pixels each includes an auto-zero transistor and a reset control section. The auto-zero transistor initializes a change amount acquisition section for obtaining a brightness change amount. The reset control section switches the auto-zero transistor by using the reference signal in a case where a prescribed address event has occurred.