A light detection device includes: a back-illuminated light receiving element; a circuit element; a connection member; an underfill; and a light shielding mask. The light shielding mask includes a frame having an opening and a light shielding layer formed on an inner surface of the opening. A first opening edge on the side of the circuit element in the opening is located at the outside of an outer edge of the light receiving element. A second opening edge opposite to the circuit element in the opening is located at the inside of the outer edge of the light receiving element. The opening is narrowed from the first opening edge toward the second opening edge. A width of the frame increases from the first opening edge toward the second opening edge. The underfill reaches a gap between the light receiving element and the light shielding layer.

An image sensor for electronic cameras has a plurality of pixels for generating exposure-dependent signals, wherein a respective pixel at least comprises: a light-sensitive element to generate electrical charge from incident light; a readout node; a transfer gate to selectively couple the light-sensitive element to the readout node; a converter transistor to convert the charge present at the readout node into a voltage signal at a signal output; and a selection switch that is connected to the signal output of the converter transistor to selectively couple the signal output of the converter transistor to an associated readout line of the image sensor. The respective pixel has an electrically conductive shielding structure that at least partly surrounds the readout node and that is set or can be set to an electrical potential that depends on the voltage signal of the converter transistor.

Image-capturing device includes: an image sensor that includes a first pixel and a second pixel, each having a filter unit that can be switched to a light-shielding state in which light is blocked or to a transmissive state in which light is transmitted, a photoelectric conversion unit that generates an electric charge through photoelectric conversion of light transmitted through the filter unit and an output unit that outputs a signal based upon electric charge generated at the photoelectric conversion unit, and; a correction unit that corrects a signal output from the output unit of the first pixel while the filter unit of the first pixel is in a transmissive state, based upon a signal output from the output unit of the first pixel with the filter unit of the first pixel set in a light-shielding state and with the filter unit of the second pixel set in a transmissive state.

An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a GMR filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. The present technology can be applied to, for example, an image sensor provided with a GMR filter, such as a back-side-illuminated or front-side-illuminated CMOS image sensor.

There is provided an imaging device including: a first semiconductor substrate having a first region that includes a photoelectric conversion section and a via portion, a second region adjacent to the first region, a connection portion disposed at the second region, and a second semiconductor substrate, wherein the connection portion electrically couples the first semiconductor substrate to the second semiconductor substrate in a stacked configuration, and wherein a width of the connection portion is greater than a width of the via portion.

[Problem] There is provided a solid-state image pickup device and an electronic apparatus, which are capable of using a substrate other than a {100} substrate while suppressing the problem of substrates other than the {100} substrate.

[Means of Solution] The solid-state image pickup device in the present disclosure includes a first substrate that is a substrate other than a {100} substrate; a photoelectric conversion unit that is provided in the first substrate; a lens that is provided above the first substrate; one or more substrates that are provided below the first substrate and have a crystal plane different from a crystal plane of the first substrate; and a transistor that is provided on an upper surface or a lower surface of one of the one or more substrates and is included in a source follower circuit.

A light receiving element including: a semiconductor substrate; a photoelectric conversion unit (PD) in the semiconductor substrate that converts light into electric charges; a first electric charge accumulation unit (MEM) in the semiconductor substrate to which the electric charges are transferred from the photoelectric conversion unit; a first distribution gate on a front surface of the semiconductor substrate that distributes the electric charges from the photoelectric conversion unit to the first electric charge accumulation unit; a second electric charge accumulation unit (MEM) in the semiconductor substrate to which the electric charges are transferred from the photoelectric conversion unit; and a second distribution gate on the front surface of the semiconductor substrate that distributes the electric charges from the photoelectric conversion unit to the second electric charge accumulation unit, in which the first and second distribution gates each have a pair of buried gate portions.

A camera module and a molded photosensitive assembly and manufacturing methods thereof, and an electronic device are disclosed. The molded photosensitive assembly includes an imaging assembly, a molded base and a filter assembly. The imaging assembly includes a circuit board and at least one photosensitive element, and each photosensitive element is conductively connected to the circuit board. The molded base has at least one stepped peripheral groove to define a light window through each stepped peripheral groove, the molded base embeds a part of the imaging assembly, and a photosensitive region of each photosensitive element respectively corresponds to each light window of the molded base. The filter assembly includes at least one filter element, and each filter element is correspondingly arranged in each stepped peripheral groove of the molded base, so that each filter element respectively corresponds to each light window of the molded base.

An image sensor includes a first photoelectric conversion unit that converts light incident through a first opening to an electric charge, a second photoelectric conversion unit that converts light incident through a second opening which is smaller than the first opening to an electric charge, and a signal output wiring that outputs a first signal generated by the electric charge converted by the first photoelectric conversion unit and a second signal generated by the electric charge converted by the second photoelectric conversion unit. The second photoelectric conversion unit is disposed between the second opening and the signal output wiring.

A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.