A curved FPA comprises an array of detectors, with mesas etched between the detectors such that they are electrically and physically isolated from each other. Metallization deposited at the bottom of the mesas reconnects the detectors electrically and thereby provides a common ground between them. Strain induced by bending the FPA into a curved shape is across the metallization and any backfill epoxy, rather than across the detectors. Indium bumps are evaporated onto respective detectors for connection to a readout integrated circuit (ROIC). An ROIC coupled to the detectors is preferably thinned, and the backside of the ROIC may also include mesas such that the ROIC is reticulated.

Photosensors may be formed on a front side of a semiconductor substrate. An optical refraction layer having a first refractive index may be formed on a backside of the semiconductor substrate. A grid structure including openings is formed over the optical refraction layer. A masking material layer is formed over the grid structure and the optical refraction layer. The masking material layer may be anisotropically etched using an anisotropic etch process that collaterally etches a material of the optical refraction layer and forms non-planar distal surface portions including random protrusions on physically exposed portions of the optical refraction layer. An optically transparent layer having a second refractive index that is different from the first refractive index may be formed on the non-planar distal surface portions of the optical refraction layer. A refractive interface refracts incident light in random directions, and improves quantum efficiency of the photosensors.

A hybrid sensor shift platform for an optical image stabilization (OIS) actuator mechanism in compact camera modules includes two or more substrates. A top substrate is composed of an organic material (e.g., a resin) to reduce mass, reduce magnetic interaction with permanent magnets, and improve reliability. One or more lower substrates of the hybrid sensor shift platform are ceramic substrates that provide the benefits of ceramics for connection to the image sensor. The organic substrate is connected via a solder bond process to the lower ceramic substrate(s). The connection between the substrates is reinforced with an under-fill of epoxy that surrounds the solder bonds, thus creating a full interface between the substrates within the overlap.

An object of the present disclosure is to provide a solid-state imaging device capable of suppressing deterioration of image quality. The solid-state imaging device includes: a first pixel that has a plurality of photoelectric conversion units sharing a first color filter with each other and a plurality of on-chip lenses; a second pixel that is arranged adjacent to the first pixel and has a plurality of photoelectric conversion units sharing a second color filter with each other and a plurality of on-chip lenses; and a first light shielding region that is provided between the first pixel and the second pixel.

An image sensor pixel includes a substrate having a pixel electrode on a light receiving surface thereof, and a photoelectric conversion layer including a perovskite material, on the pixel electrode. A transparent electrode is provided on the photoelectric conversion layer, and a vertical electrode is provided, which is electrically connected to the pixel electrode and extends at least partially through the substrate. The photoelectric conversion layer includes a perovskite layer, a first blocking layer extending between the pixel electrode and the perovskite layer, and a second blocking layer extending between the transparent electrode and the perovskite layer. The perovskite material may have a material structure of ABX.sub.3, A.sub.2BX.sub.4, A.sub.3BX.sub.5, A.sub.4BX.sub.6, ABX.sub.4, or A.sub.n−1B.sub.nX.sub.3n+1, where: n is a positive integer in a range from 2 to 6; A includes at least one material selected from a group consisting of Na, K, Rb, Cs and Fr; B includes at least one material selected from a divalent transition metal, a rare earth metal, an alkaline earth metal, Ga, In, Al, Sb, Bi, and Po; and X includes at least one material selected from Cl, Br, and I.

An image sensing device includes a pixel array configured to include a plurality of pixel groups arranged in a matrix structure. Each of the pixel groups includes an optical filter configured to selectively pass incident light, a plurality of photoelectric conversion regions disposed below the optical filter and arranged in a matrix structure, a first isolation structure disposed between the photoelectric conversion regions and other pixel groups, a plurality of second isolation structures disposed between two adjacent photoelectric conversion regions from among the photoelectric conversion regions, and a third isolation structure disposed between the second isolation structures, and configured to interconnect the second isolation structures. The third isolation structure includes a cavity region formed adjacent to contact any one of the photoelectric conversion regions.

Disclosed is a SPAD pixel for a backside illuminated image sensor. More particularly, the SPAD pixel may improve sensitivity to long wavelengths by maximizing the depth of a PN junction in an epitaxial layer in the SPAD substrate.

Provided is an image sensor including: a substrate including a first pixel domain and a second pixel domain that are adjacent to each other in a first direction, the first pixel domain including first pixels and the second pixel domain including second pixels; a first color filter provided on a first surface of the substrate and vertically overlapping the first pixels; a first microlens provided on the first color filter and each of the first pixels; and a second microlens provided on the first surface of the substrate and vertically overlapping at least a portion of each of the second pixels, wherein a second refractive index of the second microlens is greater than a first refractive index of the first microlens, and wherein a level difference between an uppermost part of the first microlens and an uppermost part of the second microlens is within about 2% of a maximum height of the first microlens.

An image sensor comprises a first and second chips. The first chip includes a first semiconductor substrate, a photoelectric conversion layer in the first semiconductor substrate, a color filter, a micro lens, a first transistor adjacent to the photoelectric conversion layer, a first insulating layer, and a first metal layer in the first insulating layer and connected to the first transistor. The second chip includes a second insulating layer, a second semiconductor substrate, a second transistor on the second semiconductor substrate, a second metal layer in the second insulating layer and connected to a gate structure of the second transistor through a gate contact, a landing metal layer below the second metal layer, and a through via in direct contact with the landing metal layer and vertically passing through the second semiconductor substrate. A width of the through via becomes narrower as the width approaches the third surface.

A method of fabricating an image sensor includes forming a semiconductor substrate of a first conductivity type, forming a pixel isolation trench in in the semiconductor substrate to define pixel regions, forming a liner insulating layer in the pixel isolation trench, doping the liner insulating layer with dopants of a first conductivity type, forming a semiconductor layer on the liner insulating layer to fill the pixel isolation trench after the doping of the dopants, and performing a thermal treatment process on the semiconductor substrate.