A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

The present disclosure provides an image sensing module including a main board and an image sensor. The main board has a first surface and a second surface opposite to each other. The image sensor is disposed on the first surface of the main board and includes a plurality of isolation structures and a photoelectric conversion element between the plurality of isolation structures. A first angle is provided between a light incident surface of the photoelectric conversion element and the first surface of the main board, and a second angle is provided between a light beam incident to the light incident surface of the photoelectric conversion element and a normal vector of the light incident surface. The second angle is about equal to the Brewster angle at the interface of the light beam incident to the light incident surface.

An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a GMR filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. The present technology can be applied to, for example, an image sensor provided with a GMR filter, such as a back-side-illuminated or front-side-illuminated CMOS image sensor.

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a photodetector arranged within a substrate. The substrate has surfaces defining one or more protrusions arranged along a first side of the substrate over the photodetector. One or more isolation structures are arranged within one or more trenches defined by sidewalls of the substrate arranged on opposing sides of the photodetector. The one or more trenches extend from the first side of the substrate to within the substrate. The one or more isolation structures respectively include a reflective medium configured to reflect electromagnetic radiation.

A biosensor is provided. The biosensor includes a substrate, a first photodiode, a second photodiode, an angle-sensitive filter, and an immobilization layer. The first photodiode and the second photodiode are disposed in the substrate and define a first pixel and a second pixel, respectively. The first pixel and the second pixel receive a light. The angle-sensitive filter is disposed on the substrate. The immobilization layer is disposed on the angle-sensitive filter.

The problem of reducing noise in image sensing devices, especially NIR detectors, is solved by providing ground connections for the reflectors. The reflectors may be grounded through vias that couple the reflectors to grounded areas of the substrate. The grounded areas of the substrate may be P+ doped areas formed proximate the surface of the substrate. In particular, the P+ doped areas may be parts of photodiodes. Alternatively, the reflectors may be grounded through a metal interconnect structure formed over the front side of the substrate.

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate. The color filter includes a plurality of second micro structures disposed over the back side of the substrate. The first micro structures are arranged symmetrically to a first axial, and the second micro structures are arranged symmetrically to a second axial.

A light sensor includes a semiconductor substrate supporting a number of pixels. Each pixel includes a photoconversion zone extending in the substrate between a front face and a back face of the substrate. An optical diffraction grating is arranged over the back face of the substrate at a position facing the photoconversion zone of the pixel. For at least two different pixels of the light sensor, the optical diffraction gratings have different pitches. Additionally, the optical grating of each pixel is surrounded by an opaque wall configured to absorb at operating wavelengths of the sensor.

A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a base substrate; a thin film transistor on the base substrate; an insulating layer on a side of the thin film transistor away from the base substrate; a photosensor on a side of the insulating layer away from the base substrate; a passivation layer on a side of the photosensor away from the base substrate; a scintillation layer on a side of the passivation layer away from the base substrate; and a reflective layer on a side of the scintillation layer away from the base substrate. The photosensor includes a first polarity layer in direct contact with the passivation layer. All sides of the first polarity layer other than a side internal to the photosensor are entirely in direct contact with the passivation layer.

A photoelectric conversion device includes a semiconductor layer formed of silicon, a plurality of pixels formed in the semiconductor layer, and a pixel separation portion is formed to separate each of the plurality of pixels, wherein the pixel separation portion includes a metal filling portion and a dielectric film provided on a side portion of the metal filling portion, a material of the metal filling portion is copper, a material of the dielectric film is a silicon oxide, and a thickness of the dielectric film is not less than 50 nm and not more than 270 nm.