A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

There is provided an imaging device, an electronic apparatus including an imaging device, and an automotive vehicle including an electronic apparatus including an imaging device, including: a first substrate including a first set of photoelectric conversion units; a second substrate including a second set of photoelectric conversion units; and an insulating layer between the first substrate and the second substrate; where the insulating layer has a capability to reflect a first wavelength range of light and transmit a second wavelength range of light that is longer than the first wavelength range of light.

The present disclosure relates to a solid-state image sensor and an electronic device capable of simultaneously imaging a subject image and detecting a moving object. A solid-state image sensor according to an aspect of the present disclosure is provided with an infrared light detection unit which outputs a moving object image on the basis of infrared light out of incident light, and a visible light detection unit which outputs a subject image on the basis of visible light out of the incident light, in which the infrared light detection unit and the visible light detection unit are stacked and simultaneously output the moving object image and the subject image with the same frame and the same angle of view. The present disclosure is applicable to, for example, an electronic device having an imaging function for detecting a moving object.

An imaging device includes a semiconductor substrate, a first pixel, and second pixels adjacent to the first pixel. Each of the first pixel and the second pixels includes a first photoelectric conversion layer, a first pixel electrode, a first plug that electrically connects the semiconductor substrate and the first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, and a second plug that electrically connects the semiconductor substrate and the second pixel electrode. When the imaging device is viewed in a normal direction of the semiconductor substrate, a smallest distance of distances between the first plug in the first pixel and the first plugs in the respective second pixels is smaller than a smallest distance of distances between the first plug in the first pixel and the second plugs in the first pixel and the respective second pixels.

A photoelectric conversion element including a first electrode and a second electrode that are disposed to face each other and a photoelectric conversion layer that is provided between the first electrode and the second electrode. The photoelectric conversion layer contains at least a subphthalocyanine or a subphthalocyanine derivative, and a carrier dopant, in which the carrier dopant has a concentration of less than 1% by volume ratio to the subphthalocyanine or the subphthalocyanine derivative.

A solid-state imaging element including a phase difference detection pixel pair that includes first and second phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit arranged at an upper side of a semiconductor substrate and a second photoelectric conversion unit arranged within the semiconductor substrate. The first photoelectric conversion film may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.

Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

An apparatus is provided. The apparatus includes a semiconductor substrate including a first photodiode to generate a first charge, a second photodiode to generate a second charge, a barrier layer between the first photodiode and the second photodiode, wherein the first photodiode, the barrier layer, and the second photodiode form a stack. The apparatus further includes a floating drain and one or more gates including: a first gate portion on the semiconductor substrate and a second gate portion extending from the front side surface through the first photodiode and reaching the barrier layer. The first gate portion is configured to conduct a first signal to control flow of charge from the first photodiode to the floating drain, and the second gate portion is configured to conduct a second signal to control the barrier layer to control the flow of the second charge.

Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.