A solid-state imaging device includes a second image sensor having an organic photoelectric conversion film transmitting a specific light, and a first image sensor which is stacked in layers on a same semiconductor substrate as that of the second image sensor and which receives the specific light having transmitted the second image sensor, in which a pixel for focus detection is provided in the second image sensor or the first image sensor. Therefore, an AF method can be realized independently of a pixel for imaging.

The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The device includes a photoelectric conversion section; a trench between the photoelectric conversion sections in adjacent pixels; and a PN junction region on a sidewall of the trench and including a P-type region and an N-type region, the P-type region having a protruding region. The device can include an inorganic photoelectric conversion section having a pn junction and an organic photoelectric conversion section having an organic photoelectric conversion film that are stacked in a depth direction within a same pixel; and a PN junction region on a sidewall of the inorganic photoelectric conversion section. The PN junction region can further include a first P-type region and an N-type region; and a second P-type region. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

A photodetector device comprising n-type and p-type light absorbing regions arranged to form a pn-junction and n+ and p+ contact regions connected to respective contacts. The light absorbing regions and the contact regions are arranged in a sequence n+ p n p+ so that, after a voltage applied between the n+ and p+ contacts is switched from a reverse bias to a forward bias, electrons and holes which are generated in the light absorbing regions in response to photon absorption drift towards the p+ and n+ contact regions respectively, which causes current to start to flow between the contacts after a time delay which is inversely proportional to the incident light intensity.

A solid-state imaging element of the present disclosure a pixel. The pixel includes a charge accumulation unit that accumulates a charge photoelectrically converted by a photoelectric conversion unit, a reset transistor that selectively applies a reset voltage to the charge accumulation unit, an amplification transistor having a gate electrode electrically connected to the charge accumulation unit, and a selection transistor connected in series to the amplification transistor. Additionally, the solid-state imaging element includes a first wiring electrically connecting the charge accumulation unit and the gate electrode of the amplification transistor, a second wiring electrically connected to a common connection node of the amplification transistor and the selection transistor and formed along the first wiring, and a third wiring electrically connecting the amplification transistor and the selection transistor.

A photoelectric conversion device includes a photoelectric conversion unit that generates signal charge of a first polarity and a charge conversion circuit that converts the signal charge into a signal voltage. The photoelectric conversion unit includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type that are provided in a surface side of a semiconductor substrate, a third semiconductor region of the first conductivity type provided at a first depth, a fourth semiconductor region of the second conductivity type provided at a second depth and overlaps the second semiconductor region in a plan view, and a fifth semiconductor region of the first conductivity type provided at a third depth, and the third semiconductor region and the fifth semiconductor region overlap the first semiconductor region, the second semiconductor region, and the fourth semiconductor region in the plan view.

The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus. A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.

A solid-state imaging element according to an embodiment of the present disclosure includes a first electrode including a plurality of electrodes, a second electrode opposed to the first electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode, and the first electrode has, at least in a portion, an overlap section where the plurality of electrodes overlap each other with a first insulation layer interposed therebetween.

An imaging element according to an embodiment of the present disclosure includes: a first electrode; a second electrode; an organic layer; a first semiconductor layer; and a second semiconductor layer. The second electrode is disposed to be opposed to the first electrode. The organic layer is provided between the first electrode and the second electrode. The organic layer includes at least a photoelectric conversion layer. The first semiconductor layer is provided between the second electrode and the organic layer. The first semiconductor layer includes at least one of a carbon-containing compound or an inorganic compound. The carbon-containing compound has a greater electron affinity than a work function of the first electrode. The inorganic compound has a greater work function than the work function of the first electrode. The second semiconductor layer is provided between the second electrode and the first semiconductor layer. The second semiconductor layer has an absolute value B of a difference between a HOMO (Highest Occupied Molecular Orbital) level and a Fermi level of the second electrode or has, near the Fermi level, an in-gap level having a state density of 1/10000 or more as compared with the HOMO level. The absolute value B is greater than or equal to an absolute value A of a difference between a first LUMO (Lowest Unoccupied Molecular Orbital) level and the Fermi level. The first LUMO level is calculated from an optical band gap.

A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.