An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

An integrated device, the device including: a first level including a first mono-crystal layer, the first mono-crystal layer including a plurality of single crystal transistors; an overlying oxide disposed on top of the first level; a second level including a second mono-crystal layer, the second level overlaying the oxide, where the second mono-crystal layer includes a plurality of semiconductor devices; a third level overlaying the second level, where the third level includes a plurality of image sensors, where the first level includes a plurality of landing pads, where the second level is bonded to the first level, where the bonded includes an oxide to oxide bond; and an isolation layer disposed between the second mono-crystal layer and the third level.

An imaging device includes: an effective pixel region that includes a plurality of imaging elements-A, amplifies signal charges generated by photoelectric conversion, and reads the signal charges into a drive circuit; and an optical black region that includes a plurality of imaging elements-B, surrounds the effective pixel region, and outputs optical black that serves as the reference for black level. In the imaging device, the photoelectric conversion layer forming the plurality of imaging elements-A and the plurality of imaging elements-B is a common photoelectric conversion layer, the common photoelectric conversion layer is located on an outer side of the optical black region, and extends toward an outer edge region surrounding the optical black region, and an outer edge electrode is disposed in the outer edge region.

A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens 90. The first imaging element includes a first electrode 11, a third electrode 12, and a second electrode 16. The pixel further includes a third electrode control line VOA connected to the third electrode 12 and a plurality of control lines 62B connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lens 90 included in the pixel and any one of the plurality of control lines 62B included in the pixel is shorter than a distance between the center of the on-chip micro lens 90 included in the pixel and the third electrode control line VOA included in the pixel.

The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus. A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.

The present technology relates to a solid-state image sensing device capable of restricting a deterioration in photoelectric conversion characteristic of a photoelectric conversion unit, and an electronic device. A solid-state image sensing device includes: a photoelectric conversion unit formed outside a semiconductor substrate; a charge holding unit for holding signal charges generated by the photoelectric conversion unit; a reset transistor for resetting the potential of the charge holding unit; a capacitance switching transistor connected to the charge holding unit and directed for switching the capacitance of the charge holding unit; and an additional capacitance device connected to the capacitance switching transistor. The present technology is applicable to solid-state image sensing devices and the like, for example.

A photoelectric converter includes: a first electrode; a second electrode; a first photoelectric conversion layer; a second photoelectric conversion layer; a first buffer layer; and a second buffer layer. The second electrode is disposed to be opposed to the first electrode. The first photoelectric conversion layer is provided between the first electrode and the second electrode. The first photoelectric conversion layer includes a first dye material and a first carrier transport material. The second photoelectric conversion layer is stacked on the second electrode side of the first photoelectric conversion layer between the first electrode and the second electrode. The second photoelectric conversion layer includes a second dye material and a second carrier transport material. The second dye material has a light absorption waveform different from a light absorption waveform of the first dye material. The first buffer layer has a first electrical conduction type. The first buffer layer is provided between the first electrode and the first photoelectric conversion layer. The second buffer layer has a second electrical conduction type different from the first electrical conduction type. The second buffer layer is provided between the second electrode and the second photoelectric conversion layer.

A photoelectric conversion element of the present disclosure includes a first electrode, a second electrode disposed to be opposed to the first electrode, and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including at least one of a Chryseno[1,2-b:8,7-b′]dithiophene (ChDT1) derivative represented by the general formula (1) or a Chryseno[1,2-b:7,8-b′]dithiophene (ChDT2) derivative represented by the general formula (2).

An optoelectronic device for detecting radiation, comprising a semiconductor body including: a cathode region delimited by a front surface, having a first conductivity type and including a bottom layer; an anode region having a second conductivity type, which extends in the cathode region starting from the front surface and forms a surface junction with the cathode region; and a buried region having the second conductivity type, which extends within the cathode region and forms a buried junction with the bottom layer. The cathode region further includes a buffer layer, which is arranged underneath the anode region and overlies, in direct contact, the bottom layer. The buffer layer has a doping level higher than the doping level of the bottom layer.

An image sensor may include a main photodiode formed in a substrate, a first inter-layer dielectric layer formed over a lower surface of the substrate, and phase difference detectors formed over the first inter-layer dielectric layer. The phase difference detectors include a left phase difference detector that is vertically overlapping and aligned with a left side region of the main photodiode, and a right phase difference detector that is vertically overlapping and aligned with a right side region of the main photodiode.