An imaging system may include an image sensor having pixels with stacked photodiodes in which a first photodiode generates a first image signal in response to light of a first wavelength and a second photodiode generates a second image signal in response to light of a second wavelength. The imaging system may include processing circuitry that applies a color correction matrix to isolate components of the first and second signals that are generated in response to light of the first and second wavelengths while removing components of the first and second signals that are generated in response to light of other wavelengths. The processing circuitry may increase noise correlations between the signals to mitigate noise amplification generated by the color correction matrix. The processing circuitry may apply a point filter to increase luma fidelity of the signals.

A semiconductor layered structure includes a base layer, a quantum well structure, and a contact layer. The base layer, the quantum well structure, and the contact layer are disposed so as to be stacked in this order. In the contact layer, a region including a first main surface that is a main surface on a quantum well structure side has a p-type impurity concentration lower than a p-type impurity concentration of a region including a second main surface that is a main surface opposite to the first main surface. A photodiode includes the semiconductor layered structure and an electrode formed on the semiconductor layered structure. A sensor includes the photodiode and a read-out circuit connected to the photodiode.

Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor having at least two pixel electrodes per color region, and having at least two modes is disclosed. The example image sensor includes a first, unbinned, mode; and a second, binned, mode. In the first, unbinned mode, the at least two pixel electrodes per color region are to be reset to substantially similar levels. In the second, binned mode, a first pixel electrode of the at the least two pixel electrodes is to be reset to a high voltage that results in efficient collection of photocharge, and a second pixel electrode of the at the least two pixel electrodes is to be reset to a low voltage that results in less efficient collection of photocharge. Other methods and apparatuses are disclosed.

The invention relates to a pixel of a CMOS imager, the pixel comprising: an infrared photodiode suitable for generating an electric current when it is exposed to an optical radiation having a wavelength greater than 950 nanometers, a conversion circuit able to receive electrons and deliver a voltage with a value varying as a function of the number of received electrons, a first switch connected between the infrared photodiode and the conversion circuit.

A method for producing a semiconductor light receiving device includes the steps of growing a stacked semiconductor layer including a light-receiving layer having a super-lattice structure, the super-lattice structure including first and second semiconductor layers stacked alternately; forming a mesa structure by etching the stacked semiconductor layer, the mesa structure having a side surface exposed in an atmosphere; forming a deposited layer on the side surface of the mesa structure by supplying a silicon raw material, the deposited layer containing silicon generated from the silicon raw material; and, after the step of forming the deposited layer, forming a passivation film on the side surface of the mesa structure. The first semiconductor layer contains gallium as a constituent element. In the step of forming the deposited layer, the silicon raw material is supplied without supplying an oxygen raw material containing an oxygen element.

An infrared image sensor includes a bias circuit receiving a timing signal, the bias circuit generating a bias voltage having a first value and a second value in response to the timing signal; a semiconductor light-receiving device including a photodiode, the semiconductor light-receiving device receiving the bias voltage; a read-out circuit including a read-out electrode connected to the photodiode, the read-out electrode receiving an electrical signal from the photodiode; and a signal processing circuit processing a read-out signal from the read-out circuit synchronously with the timing signal. The photodiode includes an optical absorption layer made of a III-V group compound semiconductor. The optical absorption layer has a type II multi quantum well structure including first compound semiconductor layers containing antimony as a constituent element and second compound semiconductor layers that are stacked alternately.

In some examples, an apparatus comprises: a first photodiode to sense a first component of light associated with a first wavelength, and a second photodiode configured to sense a second component of the light associated with a second wavelength, the first component and the second component being associated with, respectively, a first wavelength and a second wavelength. The apparatus further comprises a first optical structure and a second optical structure positioned over, respectively, the first photodiode and the second photodiode. The first optical structure is configured to increase a propagation path of the first component of the light within the first photodiode and has a first optical property based on the first wavelength. The second optical structure is configured to increase a propagation path of the second component of the light within the second photodiode, and has a second optical property based on the second wavelength.

Imaging apparatus (2000, 2100, 2200) includes a photosensitive medium (2004, 2204) and an array of pixel circuits (302), which are arranged in a regular grid on a semiconductor substrate (2002) and define respective pixels (2006, 2106) of the apparatus. Pixel electrodes (2012, 2112, 2212) are connected respectively to the pixel circuits in the array and coupled to read out photocharge from respective areas of the photosensitive medium to the pixel circuits. The pixel electrodes in a peripheral region of the array are spatially offset, relative to the regular grid, in respective directions away from a center of the array.

The present technology relates to a solid-state imaging device, a manufacturing method thereof, and an electronic device that enable improvement of the sensitivity in a near infrared region by a simpler process. A solid-state imaging device includes: a first semiconductor layer in which a first photoelectric conversion unit and a first floating diffusion are formed; a second semiconductor layer in which a second photoelectric conversion unit and a second floating diffusion are formed; and a wiring layer including a wiring electrically connected to the first and second floating diffusions. The first semiconductor layer and the second semiconductor layer are laminated, and the wiring layer is formed on a side of the first or second semiconductor layer, the side being opposite to a side on which the first semiconductor layer and the second semiconductor layer face each other. The present technology can be applied to a CMOS image sensor.

A photodetector array comprising at least one first sensor and at least one second sensor on the horizontal surface of the array substrate. The at least one first sensor is sensitive to radiation in a first wavelength range which comprises long-wavelength infrared wavelengths, and the at least one second sensor is sensitive to radiation in a second wavelength range which comprises wavelengths shorter than long-wavelength infrared. The array substrate comprises a vertical cavity on its horizontal surface, and the first sensor comprises a layer of pyroelectric material (65) which extends horizontally across the vertical cavity in the first area. A first part of a layer of two-dimensional layered material at least partly covers the layer of pyroelectric material (65), and a second part of the layer of two-dimensional layered material at least partly covers the foundation of the second sensor.