There is provided a detection panel, including: a substrate, gate lines, signal detection lines and pixels, a thin film transistor and an optical sensor are arranged in each pixel, the thin film transistor has a gate coupled with the corresponding gate line, a first electrode coupled with the corresponding signal detection line, and a second electrode coupled with a third electrode of the optical sensor in the same pixel; the pixels include at least one detecting pixel and at least one marking pixel, a first bias voltage line and a second bias voltage line are arranged on a side of the optical sensor away from the substrate, a fourth electrode of the optical sensor in the detecting pixel is coupled with the corresponding first bias voltage line, and the second electrode of the thin film transistor in the marking pixel is coupled with the corresponding second bias voltage line.

An imaging module (114) of an imaging system comprises a porous silicon membrane (116) with a first side (208), a contact side (210) opposite the first side, columns of silicon (212) configured to extend from the first side to the contact side, and columnar holes (214, 502) interlaced with the columns of silicon and configured to extend from the first side to the contact side. The imaging module further includes quantum dots (118) in the columnar holes. The imaging module further includes a metal pad (120) electrically coupled to the columns of silicon of the porous silicon membrane. The quantum dots in the columnar holes are electrically insulated from the metal pad. The imaging module further includes a substrate (122) with an electrically conductive pad (204) in electrical communication with the metal pad that defines a pixel.

The present disclosure provides a detection substrate, a manufacturing method thereof and a ray detector. The detection substrate includes: a base substrate; a plurality of independent first electrodes arranged on the base substrate on the same layer; a photoelectric conversion layer arranged on a whole face of sides, facing away from the base substrate, of the plurality of first electrodes; a ray absorption layer arranged on a side, facing away from the plurality of first electrodes, of the photoelectric conversion layer, wherein an orthographic projection of the ray absorption layer on the base substrate is overlapped with an orthographic projection of gaps between the first electrodes on the base substrate; and a second electrode arranged on a whole face of a side, facing away from the plurality of first electrodes, of the photoelectric conversion layer.

Disclosed herein is a method for forming a radiation detector. The method comprises forming a radiation absorption layer and bonding an electronics layer to the radiation absorption layer. The electronics layer comprises an electronic system configured to process electrical signals generated in the radiation absorption layer upon absorbing radiation photons. The method for forming the radiation absorption layer comprises forming a trench into a first surface of a semiconductor substrate; doping a sidewall of the trench; forming a first electrical contact on the first surface; forming a second electrical contact on a second surface of the semiconductor substrate. The second surface is opposite the first surface. The method further comprises dicing the semiconductor substrate along the trench.

A drive backplane, a manufacturing method thereof, a detection substrate and a detection device. The drive backplane includes: a base plate and multiple drive modules disposed on the base plate. Each drive module includes a reset transistor, a read transistor, an amplifier transistor and a memory capacitor; the reset transistor is connected to the memory capacitor, the memory capacitor is connected to a photosensor, the amplifier transistor is connected to the memory capacitor, and the read transistor is connected to the amplifier transistor; wherein an active layer in the amplifier transistor is made of amorphous silicon or an oxide semiconductor.

Disclosed herein is an image sensor comprising: a plurality of avalanche photodiodes (APDs); wherein each of the APDs comprises a radiation absorption layer that comprises an absorption region and an amplification region; wherein the absorption region is configured to generate charge carriers therein from a particle of radiation absorbed by the radiation absorption layer; wherein the absorption region comprises an InGaAs layer sandwiched between InP layers; wherein the amplification region has an electric field therein, the electric field having a field strength sufficient to cause an avalanche of the charge carriers in the amplification region.

According to an embodiment, a method of fabricating a photodiode device may include: growing an epitaxial layer on a first surface of a substrate, wherein the epitaxial layer is first type lightly doped; forming, in the substrate, a first type heavily doped region in contact with the first type lightly doped epitaxial layer; thinning the substrate from a second surface of the substrate opposite to the first surface to expose the first type heavily doped region; patterning the first type heavily doped region from the second surface side of the substrate to form a trench therein, that penetrates through the first type heavily doped region and extends into the epitaxial layer, to serve as a first electrode region of the photodiode device; and forming a second type heavily doped region at bottom of the trench, to serve as a second electrode region of the photodiode device.

The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.

Disclosed herein is an apparatus suitable for radiation detection. The apparatus may comprise a radiation absorption layer and a first electrode on the radiation absorption layer. The radiation absorption layer may be configured to generate charge carriers therein from a radiation particle absorbed by the radiation absorption layer. The first electrode may be configured to generate an electric field in the radiation absorption layer. The first electrode may have a geometry shaping the electric field so that the electric field in an amplification region of the radiation absorption layer has a field strength sufficient to cause an avalanche of the charge carriers in the amplification region.

Some embodiments include an imaging system comprising a detector substrate, at least one detector circuit comprising a capacitor coupled with the detector substrate, the capacitor arranged to collect an electrical charge from the detector substrate, and the imaging system further comprises at least one programmable current source, arranged to provide a neutralizing charge to the capacitor, and the imaging system is configured to select a value for the neutralizing charge in dependence of a frame number.