The invention relates to an X-ray detector component comprising an X-ray detector chip made from a silicon substrate and comprising charge collecting electrodes. The X-ray detector chip is suitable for providing an X-ray-dependent current at the charge collecting electrodes. The X-ray detector component further comprises a CMOS read-out circuit chip comprising connection electrodes. The X-ray detector chip and the CMOS read-out circuit chip are mechanically and electrically connected in such a manner that the charge collecting electrodes and the connection electrodes are electrically connected. The invention further relates to an X-ray detection module, an imaging device and a method for manufacturing an X-ray detector component.

Disclosed herein is a phone, comprising a Lidar system which comprises (A) an image sensor comprising an array of avalanche photodiodes (APDs)(i), i=1, . . . , N, for i=1, . . . , N, the APD (i) comprising an absorption region (i) and an amplification region (i), wherein the absorption region (i) is configured to generate charge carriers from a photon absorbed by the absorption region (i), wherein the amplification region (i) comprises a junction (i) with a junction electric field (i) in the junction (i), wherein the junction electric field (i) is at a value sufficient to cause an avalanche of charge carriers entering the amplification region (i), but not sufficient to make the avalanche self-sustaining, and wherein the junctions (i), i=1, . . . , N are discrete, and (B) a radiation source, wherein the phone is configured to convert sounds to electrical signals, reproduce sounds from electrical signals, and send/receive electrical signals to/from another phone via any means.

Disclosed herein is an image sensor comprising: a plurality of avalanche photodiodes (APDs); wherein each of the APDs comprises a radiation absorption layer that comprises an absorption region and an amplification region; wherein the absorption region is configured to generate charge carriers therein from a particle of radiation absorbed by the radiation absorption layer; wherein the absorption region comprises an InGaAs layer sandwiched between InP layers; wherein the amplification region has an electric field therein, the electric field having a field strength sufficient to cause an avalanche of the charge carriers in the amplification region.

A method for producing an imager includes the following steps: a. attaching an imaging sensor to a first substrate; b. cutting out the first substrate a predefined distance around the attached imaging sensor; c. attaching a driver circuit board for driving the imaging sensor to the cut-out first substrate, close to the attached imaging sensor; d. connecting the driver circuit board for driving the imaging sensor to the attached imaging sensor in order to obtain a first tile; e. repeating the attaching, cutting-out, attaching, and connecting steps in order to obtain a second tile; f. butting together the obtained first tile and second tile by placing the cut-out first substrates in edge-to-edge contact; g. attaching the butted-together tiles to a main substrate; h. connecting the driver circuit boards of the imaging sensors of the butted-together first tile and second tile to a motherboard of the imager.

An electronic module is disclosed. The electronic module can include a package substrate, an integrated device die, a dam structure, and a mounting compound. The integrated device die can have an upper side, a lower side, and an outer side edge. The dam structure can have a first sidewall and a second sidewall opposite the first sidewall. The second sidewall can be nearer to the outer side edge than the first sidewall. The first sidewall can be laterally positioned between a center of the lower side of the integrated device die and the outer side edge. The dam structure can be disposed between a portion of the package substrate and a portion of the lower side of the integrated device die. The mounting compound can be disposed between the lower side of the integrated device die and the package substrate. The dam structure can be positioned between the mounting compound and the outer side edge of the integrated device die

A radiation sensor element (100) is provided. The radiation sensor element (100) comprises a read-out integrated circuit (110) having an interconnection face (111), a compound semiconductor layer (120) opposite the interconnection face (111), and a copper-pillar interconnection element (130) extending from the interconnection face (111) towards the compound semiconductor layer (120).

The copper-pillar interconnection element (130) comprises a copper part (131) and an oxidation barrier layer (132), comprising a noble metal and arranged between the copper part (131) and the compound semiconductor layer (120).

Disclosed herein is an apparatus suitable for detecting X-ray. The apparatus may comprise an X-ray absorption layer, an electronics layer and a distribution layer. The X-ray absorption layer may comprise a first plurality of electric contacts and configured to generate electrical signals on the first plurality of electric contacts from X-ray incident on the X-ray absorption layer. The electronics layer may comprise a second plurality of electric contacts and an electronic system, wherein the electric system electrically connects to the second plurality of electric contacts and is configured to process or interpret the electrical signals. The first plurality of electric contacts and the second plurality of electric contacts have different spatial distributions. The distribution layer is configured to electrically connect the first plurality of electric contacts to the second plurality of electric contacts.

Disclosed herein are various methods of packaging a semiconductor X-ray detector. The methods may include bonding chips including an X-ray absorption layer or including both an X-ray absorption layer and an electronic layer onto another support such as an interposer substrate or a printed circuit board.

Disclosed herein is a method comprising: forming a first electrically conductive layer on a first surface of a substrate of semiconductor, wherein the first electrically conductive layer is in electrical contact with the semiconductor; bonding, at the first electrically conductive layer, a support wafer to the substrate of semiconductor; thinning the substrate of semiconductor.

A radiation imaging device includes a radiation detector having an electric charge generation part configured to generate an electric charge corresponding to energy of incident radiation and a reading part configured to output a digital value based on the electric charge, and a circuit board in which a plurality of radiation detectors are disposed two-dimensionally. The reading part includes a lead-out substrate in which a plurality of signal processing parts are disposed two-dimensionally, and an intermediate substrate disposed between the electric charge generation part and the lead-out substrate. A plurality of first intermediate electrodes are disposed on an intermediate input surface. A plurality of second intermediate electrodes are disposed on an intermediate output surface. An arrangement interval of the second intermediate electrodes is different from an arrangement interval of the first intermediate electrodes.