Disclosed are a flat panel detector and a manufacturing method thereof. The flat panel detector including: a first optical assembly, having a first side and a second side opposite to the first side in a thickness direction of the flat panel detector, and including: a first scintillator layer configured for converting at least part of rays into a first visible light; and a first light guide component stacked with the first scintillator layer and configured for guiding the first visible light; a first image sensor assembly stacked with the first optical assembly, configured for receiving the first visible light, and including: a first image sensor located at the first side of the first optical assembly; and a second image sensor located at the second side of the first optical assembly.

A photoelectric conversion panel includes multiple thin-film transistors (TFTs) formed on an substrate, photodiodes respectively connected to the TFTs, and a metal layer formed on a light incident side of the photodiodes. The metal layer is formed in a position to overlap a subset of the photodiodes in a plan view.

An X-ray imaging apparatus includes an X-ray source, an X-ray imaging panel, and a controller. The controller includes an image processing unit that generates an inspection image in accordance with a data signal read from a thin-film transistor with the thin-film transistor supplied with a gate signal, a detection control unit that detects a dark-spot pixel from the inspection image, and a threshold correction unit that applies, to a gate of the thin-film transistor corresponding to the dark-spot pixel, a positive shift voltage that raises a gate-off threshold voltage of the thin-film transistor.

A photoelectric conversion device according to one embodiment includes a first transistor and a first photoelectric conversion element disposed on a first region, a second transistor disposed on a second region, an insulating layer that covers the first transistor, the first photoelectric conversion element, and the second transistor, and a first terminal that is disposed on the insulating layer, is electrically connected to one of the first transistor and the first photoelectric conversion element, and is connectable to an outside. The second transistor is a dummy transistor of the first transistor.

A radiation imaging device according to one embodiment includes a radiation detection panel having a first surface on which a detection region is formed, and a second surface on a side opposite to the first surface, a base substrate having a support surface configured to face the second surface and configured to support the radiation detection panel, and a flexible circuit substrate connected to the radiation detection panel, wherein an end portion of the base substrate corresponding to a portion to which the flexible circuit substrate is connected is located further inward than an end portion of the radiation detection panel when seen in a first direction orthogonal to the support surface, and the base substrate has a protruding portion which protrudes further outward than the radiation detection panel at a position at which the base substrate does not overlap the flexible circuit substrate when seen in the first direction.

Disclosed herein is radiation detector, comprising a first photodiode comprising a first junction; and a first scintillator, wherein a first point in a first plane and inside the first scintillator is essentially completely surrounded in the first plane by an intersection of the first plane and the first junction. The first junction is a p-n junction, a p-i-n junction, a heterojunction, or a Schottky junction. The radiation detector further comprises a first reflector configured to guide essentially all photons emitted by the first scintillator into the first photodiode. The first scintillator is essentially completely enclosed by the first reflector and the first photodiode.

Detection substrate, detection panel and photoelectric detection device are provided. The detection substrate includes: a detection region and a non-detection region surrounding the detection region, wherein the detection region includes a plurality of detection units in an array and a plurality of bias voltage lines; each of the detection units includes: a driving circuit, and a photoelectric conversion circuit electrically connected with the driving circuit; wherein the bias voltage lines are electrically connected with the photoelectric conversion circuits; the non-detection region comprises: input terminals electrically connected with the bias voltage lines, and voltage compensation circuits electrically connected between the input terminals and the bias voltage lines; and the voltage compensation circuits are configured to offset a voltage generated by the photoelectric conversion circuits under ambient light in a manufacturing process of the detection substrate.

A radiation detector has a photoelectric conversion element array having a light receiving unit and a plurality of bonding pads; a scintillator layer stacked on the photoelectric conversion element array; a resin frame formed on the photoelectric conversion element array so as to pass between the scintillator layer and the bonding pads away from the scintillator layer and the bonding pads and so as to surround the scintillator layer; and a protection film covering the scintillator layer and having an outer edge located on the resin frame; a first distance between an inner edge of the resin frame and an outer edge of the scintillator layer is shorter than a second distance between an outer edge of the resin frame and an outer edge of the photoelectric conversion element array; the outer edge and a groove are processed with a laser beam.

A sensing substrate and an electronic device are provided. The sensing substrate includes a sensing unit on a base substrate. The sensing unit includes a sensing element and a conductive pattern, the sensing element has a light incident surface and a back surface that are opposite and a side surface between the light incident surface and the back surface. The conductive pattern is on a side of the sensing element away from the base substrate, and has a hollow portion and a transparent conductive portion surrounding the hollow portion, an orthographic projection of the hollow portion on the base substrate is at least partially within an orthographic projection of the sensing element on the base substrate, and an orthographic projection of the transparent conductive portion on the base substrate at least partially overlaps with an orthographic projection of the side surface of the sensing element on the base substrate.

According to one embodiment, a radiation detector includes a first conductive layer including a first conductive region, and a first stacked body. The first stacked body includes a first electrode separated from the first conductive region in the a direction, a first scintillator layer provided between the first conductive region and the first electrode, a first intermediate electrode provided between the first scintillator layer and the first electrode, and a first organic semiconductor layer provided between the first intermediate electrode and the first electrode.