An X-ray sensing device includes a photosensitive element, lead-containing glass, and an X-ray conversion structure. The photosensitive element is configured to sense light having a first wavelength. The lead-containing glass overlaps the photosensitive element. The X-ray conversion structure is disposed on the lead-containing glass. The lead-containing glass is located between the photosensitive element and the X-ray conversion structure. The X-ray conversion structure is configured to at least partially convert X-rays into light having the first wavelength.

A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; a first inorganic layer formed so as to cover at least a part of the photoelectric conversion element, and to cover the first organic film; and a second organic film formed in an upper layer with respect to the first organic film, wherein the first inorganic layer is provided with a first through hole connecting the first organic film and the second organic film.

A digital quantum dot radiographic detection system described herein includes: a scintillation subsystem 202 and a semiconductor light detection subsystem 200, 200′ (including a plurality of quantum dot image sensors 200a, 200b). In a first preferred digital quantum dot radiographic detection system, the plurality of quantum dot image sensors 200 is in substantially direct contact with the scintillation subsystem 202. In a second preferred digital quantum dot radiographic detection system, the scintillation subsystem has a plurality of discrete scintillation packets 212a, 212b, at least one of the discrete scintillation packets communicating with at least one of the quantum dot image sensors. The quantum dot image sensors 200 may be associated with semiconductor substrate 210 made from materials such as silicon (and variations thereof) or graphene. An optically opaque layer 220 is preferably positioned between the discrete scintillation packets, 212a, 212b.

A ray detector substrate includes: photodetectors including first photodetectors and second photodetectors; and dimming portions including, at a side of each first photodetector away from a substrate, a respective first dimming portion, and, at a side of each second photodetector away from the substrate, a respective second dimming portion. A second scintillator layer is configured to convert part of rays into a first radiation fluorescence. A first scintillator layer is configured to convert another part of the rays into a second radiation fluorescence. The first dimming portion is configured to reflect the second radiation fluorescence, and to enable the first radiation fluorescence to pass through the first dimming portion to be detected by the first photodetector. The second dimming portion is configured to reflect the first radiation fluorescence, and to enable the second radiation fluorescence to pass through the second dimming portion to be detected by the second photodetector.

The embodiments of the present disclosure provide a detection substrate, a preparation method thereof and a flat panel detector. An orthographic projection of a first electrode on the base substrate is set to be at least partially overlapped with an orthographic projection of an active layer of a thin film transistor on the base substrate, a first protruding part is arranged on a side, close to a corresponding data line, of the first electrode, an orthographic projection of the first protruding part on the base substrate is located between the orthographic projection of the active layer on the base substrate and an orthographic projection of the data line on the base substrate.

An X-ray sensing device includes a photosensitive element, lead-containing glass, and an X-ray conversion structure. The photosensitive element is configured to sense light having a first wavelength. The lead-containing glass overlaps the photosensitive element. The X-ray conversion structure is disposed on the lead-containing glass. The lead-containing glass is located between the photosensitive element and the X-ray conversion structure. The X-ray conversion structure is configured to at least partially convert X-rays into light having the first wavelength.

An X-ray imaging device with an X-ray conversion area on a flexible circuit such as a Thin Film Transistor circuit with an array of detector cells is manufactured in a method comprising the steps of — providing a flexible carrier layer on a substrate plate, with a first surface of the flexible carrier layer attached to the substrate plate and a second surface of the flexible carrier layer exposed, whereby the substrate plate hinders the flexible carrier layer from bending; — creating an array of detector cells on a part of the second surface; — mounting a peripheral circuit on the second surface outside said part, interconnected to the array of detector cells; — attaching a further layer to the second surface, after or before mounting the peripheral circuit, the further layer comprising an X-ray conversion area at least over the array of detector cells, the further layer being attached to the flexible carrier layer beyond a first edge of the array of detector cells, and beyond the peripheral circuit, the further layer comprising a recess or and opening to accommodate the peripheral circuit; — detaching the substrate plate from the flexible carrier layer before the end of manufacturing the X-ray imaging device.

A sensor, a manufacturing method thereof, and a photoelectric conversion device are provided. The sensor includes a first gate disposed on a second insulating layer, wherein a position of the first gate corresponds to a position of a first active layer and a material of the first gate is a metal material; a second gate disposed on the second insulating layer or between a second active layer and a base substrate, wherein a position of the second active layer corresponds to a position of the second gate.

A laminated scintillator panel having a structure in which a scintillator layer for converting radiation into visible light and a non-scintillator layer are repeatedly laminated in a direction parallel to an incident direction of radiation, wherein the non-scintillator layer transmits the visible light.

Provided is a lattice-shaped laminated scintillator panel with high luminance, a large area, and a thick layer by means completely different from a conventional technique using a silicon wafer.

A solid-state imaging device includes a photodetecting section, a vertical shift register section, first row selection lines, and second row selection lines. The vertical shift register section provides the row selection lines of the m-th row with common row selection signals.